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Cypress Semiconductor Corp CY7C1418KV18-333BZC

Part No.:
CY7C1418KV18-333BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1418KV18-333BZC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:161

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Product details

Overview

CY7C1418KV18-333BZC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with two-word burst architecture, 333 MHz clock frequency, 1.8 V core supply, HSTL I/O, and 165-ball FBGA package. It delivers 666 MT/s data transfer via double data rate interface and supports configurable read latency (1 or 1.5 cycles) via DOFF pin for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1418KV18-333BZC datasheet, CY7C1418KV18-333BZC pinout, CY7C1418KV18-333BZC application, or CY7C1418KV18-333BZC equivalent, key selection criteria include DDR-II timing compliance, echo clock (CQ/CQ) synchronization capability, burst-addressed 18-bit data width, and JTAG 1149.1 test port support in high-speed memory subsystems.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of complementary K/K clocks. Write data is registered on both K and K edges, while read data is output-synchronized to C/C clocks (or K/K in single-clock mode), enabling precise timing control in multi-device DDR systems.

The device integrates a PLL for accurate data placement, supports variable-drive HSTL outputs (1.4 V to VDD), and uses ZQ pin for on-die impedance calibration against external RQ resistor. DOFF pin selects between 1-cycle (DDR-I-like) and 1.5-cycle (DDR-II) read latency modes, directly affecting system timing budget allocation.

Key Specifications

ParameterValue and Actual Design Meaning
Density36 Mbit (2M × 18 configuration)
Max Clock Frequency333 MHz - defines maximum sustained bandwidth of 666 MT/s
Read LatencySelectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
I/O VoltageHSTL Class I compatible; supports 1.5 V or 1.8 V VDDQ operation
Core Supply1.8 V ±0.1 V - fixed core rail for low-power high-speed SRAM operation
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count DDR memory
Standby CurrentTypical 40 mA at 333 MHz - measured under active standby with clocks running

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-270AC footprint.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data bus18-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo clock alignment
K / KComplementary input clocksPrimary timing reference for all synchronous inputs; address, R/W, LD, BWS latched on rising edges
C / CComplementary output data clocksUsed to deskew read data flight time across multiple devices; enables tight system-level timing closure
CQ / CQEcho clocksFree-running, phase-aligned copies of C/C; simplify receiver capture without per-pin delay tuning
DOFFRead latency mode selectLOW → 1-cycle latency (DDR-I compatibility); HIGH → 1.5-cycle latency (DDR-II optimized)
ZQImpedance calibration referenceConnects to external RQ resistor (to GND) to calibrate DQ/CQ output drive strength to match PCB trace impedance

Key Features

FeatureDesign Value
Two-word burst addressingReduces external address bus toggling by 50% versus single-word access, lowering EMI and controller overhead
Programmable output drive strengthHSTL buffers adjustable via ZQ calibration, ensuring signal integrity across varying trace lengths and loads
Dual-clock domain supportIndependent K/K (input) and C/C (output) clock pairs eliminate skew-induced setup/hold violations in large memory arrays
JTAG 1149.1 boundary scanEnables production testability and interconnect verification without physical probe access to high-density FBGA balls
Configurable read latencyHardware-selectable 1-cycle or 1.5-cycle latency allows optimization for either timing margin (1.5×) or throughput (1×)

Applications

Packet Buffer in Switch ASICHigh-Speed Test Equipment Memory

Use Scenario: Stores ingress/egress packet headers and metadata in Layer 2/3 switching fabric with sub-10 ns access granularity.

IC Role / Device Role / Timing Role: Low-latency, burst-mode SRAM acting as first-level packet buffer with deterministic 1.5-cycle read response when DOFF = HIGH.

Use Value: Enables full-line-rate forwarding at 100 Gbps+ by sustaining 666 MT/s throughput with echo-clock–synchronized data capture across 16+ parallel channels.

Use Scenario: Captures real-time waveform samples from multi-GHz ADCs in automated test systems requiring deep memory depth and precise timing alignment.

IC Role / Device Role / Timing Role: Synchronous burst SRAM providing jitter-immune data storage with CQ/CQ echo clocks matched to sampling clock domain.

Use Value: Eliminates per-pin deskew circuitry by delivering data edge-aligned to echo clocks, reducing FPGA logic utilization and board routing complexity.

Baseband Processing BufferIndustrial Motion Controller FIFO

Use Scenario: Buffers interleaved I/Q data streams between digital front-end and FFT engines in LTE/5G baseband subsystems.

IC Role / Device Role / Timing Role: DDR-II SRAM operating in 1-cycle latency mode (DOFF = LOW) to minimize pipeline stalls during continuous burst transfers.

Use Value: Delivers sustained 333 MHz clocking with HSTL signaling integrity over 10+ cm traces, supporting 16-bit parallel I/Q interfaces without signal repeaters.

Use Scenario: Holds position command sequences and encoder feedback in closed-loop servo drives requiring deterministic read/write timing under EMC stress.

IC Role / Device Role / Timing Role: Burst-access SRAM with JTAG test access used for field-upgradable motion profile storage and runtime diagnostics.

Use Value: Ensures bit-accurate command replay with <1 ns clock-to-output jitter via PLL-stabilized C/C clocks and impedance-matched DQ outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C362000B-333BIN3.3 V tolerant I/O, no echo clocks (CQ/CQ), 1-cycle fixed latency onlyLacks DDR-II timing flexibility; requires external deskew; limited to legacy 3.3 V systemsChoose only if voltage compatibility with older controllers is mandatory and echo clock simplification is not required
IS61WV102418BLL-333TSingle-ended LVCMOS I/O, no K/K or C/C differential pairs, no ZQ calibrationLower speed ceiling (≤200 MHz), no DDR-II burst protocol; suited for cost-sensitive non-DDR designsSelect when system clocking infrastructure lacks differential clock distribution and impedance control is managed externally

Compared with AS7C362000B-333BIN and IS61WV102418BLL-333T, CY7C1418KV18-333BZC uniquely provides echo clocks for simplified high-speed capture, programmable latency, and on-die impedance matching-critical for new DDR-II memory subsystems demanding >300 MHz operation with minimal timing margin risk.

Availability

CY7C1418KV18-333BZC is available at Aetrix Electronics and suitable for high-bandwidth packet buffering, baseband processing, industrial motion control, and automated test equipment requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1418KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1418KV18 belongs to Cypress's DDR II SRAM product line, designed specifically for high-throughput, low-latency memory buffering in networking, test, and signal processing systems where precise timing control and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1418KV18-333BZC?

The DOFF pin selects read latency mode: when asserted LOW, it configures the device for 1-cycle DDR-I–compatible latency; when HIGH, it enables 1.5-cycle DDR-II latency. This setting directly affects the timing relationship between address load and valid data output, and must be held stable during operation. The pin is sampled synchronously on the K clock edge at initialization.

Can CY7C1418KV18-333BZC operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output data clocks. In this configuration, C and C pins are unused, and read data is driven on K/K edges. However, echo clocks (CQ/CQ) remain functional and phase-aligned to K/K, preserving their utility for data capture timing even without dedicated C/C routing.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration of DQ and CQ output driver impedance to ~48 Ω (0.2 × RQ). This matches common PCB trace impedances, minimizing reflections and improving eye diagram margins. Leaving ZQ unconnected or tying it to GND disables calibration and forces minimum drive strength, degrading signal fidelity at 333 MHz.

Is CY7C1418KV18-333BZC pin-compatible with CY7C1420KV18-333BZC?

No - although both share the same 165-ball FBGA package and many signal names, pin assignments differ significantly. For example, CY7C1418KV18 uses DQ[17:0] and BWS[1:0], while CY7C1420KV18 uses DQ[35:0] and BWS[3:0]; their address and byte-select layouts are incompatible. Board-level replacement requires redesign of signal routing and firmware addressing logic.

CY7C1418KV18-333BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1418KV18-333BZC FAQ

1.How can I place an order for CY7C1418KV18-333BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1418KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1418KV18-333BZC reliable?

The price and inventory of CY7C1418KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1418KV18-333BZC is usually 5 days.

3.What payment methods are accepted for CY7C1418KV18-333BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1418KV18-333BZC transactions.

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4.How is shipping managed for CY7C1418KV18-333BZC?

CY7C1418KV18-333BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1418KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1418KV18-333BZC?

For technical support, including CY7C1418KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1418KV18-333BZC requirements.

6.How does Aetrix verify that CY7C1418KV18-333BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1418KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1418KV18-333BZC meets industry standards.

7.What is the process for return or replacement of CY7C1418KV18-333BZC?

All CY7C1418KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1418KV18-333BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1418KV18-333BZC part is unused and in its original packaging.

Return procedure for CY7C1418KV18-333BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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