Cypress Semiconductor Corp CY7C1420KV18-250BZC

Overview

CY7C1420KV18-250BZC from Cypress Semiconductor is a 36-Mbit (1M × 36) DDR II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, HSTL I/O, and echo clocks (CQ/CQ) for precise high-speed data capture in networking and telecom buffer applications.

For engineers reviewing the CY7C1420KV18-250BZC datasheet, CY7C1420KV18-250BZC pinout, CY7C1420KV18-250BZC application, or CY7C1420KV18-250BZC equivalent, this page delivers verified timing parameters, FBGA-165 package mapping, DDR-II burst control logic, DOFF-configurable read latency (1 or 1.5 cycles), and real-world system-level interface constraints.

Technical Context

The device implements a synchronous pipelined architecture with dual input clocks (K/K) for address/data capture and dual output clocks (C/C) for data launch, enabling precise DDR timing alignment. It uses a 1-bit burst counter driven by A0 to generate sequential 36-bit word pairs during each access.

All synchronous inputs-including R/W, LD, BWS[3:0], and A[19:0]-are registered on rising edges of K/K; all outputs-including DQ[35:0], CQ, and CQ-are edge-aligned to C/C (or K/K in single-clock mode). The PLL ensures accurate data placement relative to echo clocks, and ZQ enables programmable output impedance matching to 0.2 × RQ.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C336200B-25BIN and IS61WV102436BLL-250BLI, CY7C1420KV18-250BZC uniquely delivers HSTL-based DDR-II timing with echo clocks and ZQ calibration-enabling robust 500 MT/s operation in electrically noisy, high-density systems without external termination or per-lane deskew.

Availability

CY7C1420KV18-250BZC is available at Aetrix Electronics and suitable for telecom line cards, network packet processors, baseband digital front-ends, and high-speed test equipment requiring stable component supply across extended temperature and long production lifecycles.

Supply support for CY7C1420KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1420KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking infrastructure and real-time signal processing systems where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1420KV18-250BZC?

The DOFF pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency for improved timing margin; when LOW, it reverts to DDR-I mode with 1-cycle latency for minimal pipeline delay. This setting directly affects controller timing budget allocation and must be fixed at power-up.

Can CY7C1420KV18-250BZC operate without external termination resistors?

Yes-its ZQ pin enables on-die impedance calibration. When connected to a precision resistor to ground, it tunes DQ, CQ, and CQ output drivers to match system bus impedance (typically 25–35 Ω), eliminating the need for external series or parallel termination resistors in most PCB layouts.

How does the two-word burst architecture affect address sequencing?

The burst counter uses A0 to generate sequential addresses internally: presenting address N latches N and N+1 automatically. This halves external address bus transitions per access, reducing controller logic complexity, PCB routing congestion, and dynamic power consumption compared to single-word SRAMs.

Is CY7C1420KV18-250BZC compatible with standard DDR-I controllers?

No-it requires a DDR-II–capable controller that supports echo clocks (CQ/CQ), dual output clocks (C/C), and DOFF-driven latency selection. While electrical signaling is HSTL-compatible, the timing protocol (burst counter behavior, clock domain separation, and latency model) differs fundamentally from DDR-I standards.