Cypress Semiconductor Corp CY7C1423KV18-250BZC

Overview

CY7C1423KV18-250BZC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with separate I/O architecture, operating at 250 MHz clock frequency (500 MT/s effective data rate), 1.8 V core supply, and HSTL-compatible 1.4–1.8 V I/O voltage range. It supports two-word burst reads/writes, uses dual input clocks (K/K) for precise timing control, and delivers read latency of 1.5 cycles when DOFF = HIGH - deployed in high-speed packet buffering and network line-card memory subsystems.

For engineers reviewing the CY7C1423KV18-250BZC datasheet, CY7C1423KV18-250BZC pinout, CY7C1423KV18-250BZC application, or CY7C1423KV18-250BZC equivalent, key selection criteria include DDR II SIO interface compatibility, 165-ball FBGA (13 × 15 mm) mechanical fit, 250 MHz maximum clock frequency, and support for echo clocks (CQ/CQ) to simplify high-speed data capture in multi-device memory systems.

Technical Context

This SRAM implements a pipelined, synchronous DDR II SIO architecture with physically isolated read and write ports - eliminating bus turnaround delays. It uses dual-edge-synchronized address latching on K/K rising edges and supports both single-clock (K/K only) and dual-clock (C/C + CQ/CQ) operation modes for output data timing control.

The device integrates a PLL for accurate data placement, JTAG 1149.1 test access port, and programmable output impedance via ZQ calibration. Read latency is configurable: 1 cycle (DDR I mode, DOFF = LOW) or 1.5 cycles (DDR II mode, DOFF = HIGH), with all synchronous inputs registered on K/K and outputs registered on C/C (or K/K in single-clock mode).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm body, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C336200B-25BIN and IS61WV102418BLL-25BLI, CY7C1423KV18-250BZC uniquely delivers DDR II SIO architecture with echo clocks and ZQ calibration - essential for deterministic, high-fidelity data capture in 10G+ systems where timing margin is constrained to <100 ps.

Availability

CY7C1423KV18-250BZC is available at Aetrix Electronics and suitable for telecom packet buffering, industrial real-time controller cache, and test equipment pattern memory requiring stable component supply, long-lifecycle support, and guaranteed FBGA package consistency.

Supply support for CY7C1423KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications, with focus on signal integrity, timing precision, and system-level reliability.

CY7C1423KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for applications requiring deterministic low-latency memory access with zero bus turnaround overhead - targeting network infrastructure, test instrumentation, and real-time control systems.

FAQ

What is the function of the DOFF pin on CY7C1423KV18-250BZC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables DDR II operation with 1.5-cycle read latency and optimized burst timing; when LOW, it reverts to DDR I behavior with 1-cycle latency. This pin does not disable outputs - it only modifies internal pipeline staging. The setting must be stable before initialization and remain unchanged during operation.

Can CY7C1423KV18-250BZC operate without C and C clocks?

Yes - the device supports single-clock mode using only K and K for both input sampling and output timing. In this mode, Q[17:0] is driven on rising edges of K/K, and CQ/CQ are generated relative to K/K instead of C/C. However, echo clock functionality and flight-time deskew capability are lost, limiting maximum reliable data rate in multi-device configurations.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and configures its output drivers to deliver 0.2 × RQ impedance on Q[17:0] and CQ/CQ pins. For example, a 240 Ω RQ yields ~48 Ω driver impedance. Alternatively, tying ZQ to VDDQ enables minimum-impedance mode (~25 Ω), useful for short-trace, low-capacitance interfaces.

Is CY7C1423KV18-250BZC pin-compatible with other speeds in the same family?

Yes - CY7C1423KV18-250BZC shares identical 165-ball FBGA pinout and signal mapping with CY7C1423KV18-300BZC and CY7C1423KV18-333BZC. Speed grade differences affect only AC timing parameters (tCK, tAC, etc.), not DC characteristics or pin functions. System-level timing margin analysis is required when upgrading speed grades.