Cypress Semiconductor Corp CY7C1423KV18-300BZC

Overview

CY7C1423KV18-300BZC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with separate I/O architecture, operating at 300 MHz clock frequency (600 MHz effective data rate), 1.8 V core supply, and HSTL-compatible 1.4–1.8 V I/O voltage range. It supports two-word burst reads/writes, uses dual input clocks (K/K) for precise timing control, and features echo clocks (CQ/CQ) for simplified high-speed data capture in networking and packet buffering systems.

For engineers reviewing the CY7C1423KV18-300BZC datasheet, CY7C1423KV18-300BZC pinout, CY7C1423KV18-300BZC application, or CY7C1423KV18-300BZC equivalent, key selection criteria include DDR II SIO architecture, 1.5-cycle read latency (DOFF = HIGH), 165-ball FBGA package compatibility, and JTAG 1149.1 test access support for production validation.

Technical Context

This SRAM implements a pipelined, synchronous DDR II separate I/O interface with independent read and write ports sharing a common address bus. Address latching occurs on alternate rising edges of K/K, while write data is registered on both K and K edges - enabling true double-data-rate input registration without bus turnaround.

Read data is driven synchronously to C/C output clocks (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to C/C to eliminate per-device skew compensation. The integrated PLL ensures accurate data placement, and on-chip self-timed write circuitry eliminates external write pulse generation.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C336200B-300BIN and IS61WV102418BLL-300BLI, CY7C1423KV18-300BZC uniquely delivers 36-Mbit capacity with true DDR II SIO, echo clock–assisted timing closure, and configurable read latency - essential for deterministic high-throughput packet and signal processing.

Availability

CY7C1423KV18-300BZC is available at Aetrix Electronics and suitable for telecom line cards, network processor co-processor memory, and industrial real-time control buffers requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1423KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

CY7C1423KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfaces in packet-switched and real-time signal processing systems where bus turnaround and clock skew limit performance.

FAQ

What is the function of the DOFF pin on CY7C1423KV18-300BZC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle DDR II read latency with optimized timing margins; when LOW, the device operates in DDR I mode with 1-cycle latency. This pin directly controls internal pipeline staging and must be held static during operation - it is not dynamically switchable mid-operation.

Can CY7C1423KV18-300BZC operate without external C and C clocks?

Yes - the device supports single-clock mode using only K and K for both input and output timing. In this mode, read data is driven on K/K edges instead of C/C, and echo clocks CQ/CQ are generated relative to K/K. However, removing C/C sacrifices deskew capability and limits maximum reliable data rate to ~250 MHz due to increased clock-to-out variation.

How does ZQ calibration affect signal integrity in CY7C1423KV18-300BZC?

ZQ calibration adjusts output driver impedance by referencing an external 240 Ω resistor to ground, setting Q[17:0], CQ, and CQ output impedance to 48 Ω ±10%. This matches typical PCB trace impedances, reducing reflections and improving eye diagram opening - especially critical at 600 MT/s where mismatched terminations cause >30% jitter increase.

Is CY7C1423KV18-300BZC pin-compatible with CY7C1424KV18-300BZC?

No - although both use the same 165-ball FBGA package, their pinouts differ significantly: CY7C1423KV18-300BZC implements 18-bit data (D[17:0]/Q[17:0]), while CY7C1424KV18-300BZC uses 36-bit data (D[35:0]/Q[35:0]) with additional BWS2/BWS3 pins. Swapping them causes functional failure due to misaligned byte-write selects and address decoding.