Cypress Semiconductor Corp CY7C1423KV18-300BZXC

Overview

CY7C1423KV18-300BZXC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with separate I/O architecture, operating at 300 MHz clock frequency (600 MHz effective data rate), 1.8 V core supply, and HSTL-compatible interfaces. It implements two-word burst reads/writes, uses dual input clocks (K/K) for precise DDR timing, and supports configurable read latency (1-cycle DDR I or 1.5-cycle DDR II mode via DOFF pin) in high-bandwidth networking buffers.

For engineers reviewing the CY7C1423KV18-300BZXC datasheet, CY7C1423KV18-300BZXC pinout, CY7C1423KV18-300BZXC application, or CY7C1423KV18-300BZXC equivalent, key selection criteria include DDR II SIO timing compliance, echo clock (CQ/CQ) synchronization capability, 165-ball FBGA package mechanical fit, and JTAG 1149.1 test port integration for system-level validation.

Technical Context

This SRAM employs a synchronous pipelined architecture with independent read and write ports sharing a common address bus. Address latching occurs on alternating rising edges of K and K, while write data is registered on both K and K edges-enabling true double-data-rate operation without bus turnaround.

The device integrates a PLL for accurate data placement, echo clocks (CQ/CQ) synchronized to output clocks C/C for simplified high-speed data capture, and programmable output impedance via ZQ pin (0.2×RQ calibration). Read latency is dynamically selectable: 1 cycle when DOFF = LOW (DDR I mode), 1.5 cycles when DOFF = HIGH (DDR II mode).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm body, 0.8 mm ball pitch, JEDEC MO-270 compliant, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C336200B-300BIN and IS61WV102418BLL-300TQLI, CY7C1423KV18-300BZXC uniquely delivers DDR II SIO with echo clocks and ZQ calibration-enabling robust 600 MT/s operation in systems where signal integrity and timing margin are critical.

Availability

CY7C1423KV18-300BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, baseband processing cache, and industrial real-time controller buffer applications requiring stable component supply across extended production lifecycles.

Supply support for CY7C1423KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1423KV18 belongs to Cypress's DDR II SIO SRAM product line, designed specifically for high-bandwidth, low-latency buffering in telecom infrastructure, networking equipment, and real-time signal processing systems where deterministic timing and signal integrity are paramount.

FAQ

What is the function of the DOFF pin on CY7C1423KV18-300BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables DDR II operation with 1.5-cycle read latency; when LOW, it reverts to DDR I mode with 1-cycle latency. This setting directly affects memory controller timing budget and must be held stable during operation-no dynamic switching is supported mid-operation.

Can CY7C1423KV18-300BZXC operate with only one clock signal (K only)?

Yes-it supports single-clock mode where K serves as both input and output clock reference. In this configuration, C and C are unused, and Q[17:0] data is driven on rising edges of K and K. However, echo clocks (CQ/CQ) remain functional and aligned to K, preserving source-synchronous capture capability without requiring external C/C generation.

How does the ZQ pin calibrate output impedance?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and scales its output drivers to 0.2×RQ, matching PCB trace impedance (typically 50 Ω). If RQ = 240 Ω, calibrated output impedance becomes 48 Ω. Direct connection to VDDQ enables minimum impedance mode (~24 Ω), but grounding or leaving ZQ floating is prohibited.

Is CY7C1423KV18-300BZXC pin-compatible with CY7C1424KV18-300BZXC?

No-they share the same 165-ball FBGA package but differ electrically and logically: CY7C1423KV18 is 2M × 18 (18-bit data bus), while CY7C1424KV18 is 1M × 36 (36-bit bus). Pin assignments for D/Q signals, BWS lines, and address bits are incompatible; board layout and controller firmware must be redesigned for substitution.