Cypress Semiconductor Corp CY7C1423KV18-333BZXC

Overview

CY7C1423KV18-333BZXC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II synchronous SRAM with separate I/O architecture, operating at 333 MHz clock frequency and delivering 666 MT/s effective data rate via double-data-rate transfers. It features two-word burst reads/writes, 1.8 V core supply with HSTL-compatible I/O, and supports configurable read latency (1 or 1.5 cycles) via DOFF pin. Used in high-bandwidth packet buffering and network switch fabric memory subsystems.

For engineers reviewing the CY7C1423KV18-333BZXC datasheet, CY7C1423KV18-333BZXC pinout, CY7C1423KV18-333BZXC application, or CY7C1423KV18-333BZXC equivalent, key selection criteria include DDR II SIO timing compliance, echo clock (CQ/CQ) synchronization capability, 165-ball FBGA package footprint, and support for synchronous self-timed writes with byte-selectable write masking.

Technical Context

This SRAM implements a pipelined, synchronous burst architecture with physically separated read and write ports-eliminating bus turnaround delays. Address latching occurs on alternating rising edges of complementary K/K clocks, while write data is registered on both K and K edges, enabling precise DDR timing alignment.

The device integrates an internal PLL for accurate data placement and uses echo clocks (CQ/CQ) referenced to output clocks C/C to simplify system-level data capture. Read latency is programmable: 1 cycle when DOFF = LOW (DDR I mode), 1.5 cycles when DOFF = HIGH (DDR II mode), with all synchronous I/O controlled by edge-triggered registers.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C33618A-333BIN and IS61WV102418BLL-333TQLI, CY7C1423KV18-333BZXC uniquely delivers true DDR II SIO with echo clocks and programmable latency-enabling higher system bandwidth with relaxed timing closure, especially in multi-device memory subsystems.

Availability

CY7C1423KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply and long-term industrial temperature support.

Supply support for CY7C1423KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

CY7C1423KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for applications demanding deterministic low-latency memory access with source-synchronous timing-such as network switching fabrics and real-time control systems.

FAQ

What is the function of the DOFF pin?

The DOFF pin configures read latency mode: when asserted HIGH, it enables DDR II operation with 1.5-cycle latency for improved timing margin; when LOW, it reverts to DDR I behavior with 1-cycle latency. This setting directly affects the timing relationship between C/C clocks and valid Q[17:0] data windows, and must be held stable during operation.

How does ZQ calibration work?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures this resistance and adjusts its output driver impedance to 0.2 × RQ for Q[17:0], CQ, and CQ pins. This compensates for process/voltage/temperature variations, ensuring consistent HSTL signal integrity without manual tuning.

Can C and C be omitted in system design?

Yes - if C and C are not provided, the device defaults to single-clock mode using K and K for output timing. However, echo clocks CQ/CQ remain active and aligned to K/K, preserving source-synchronous capture capability. Full DDR II performance and deskew flexibility require C/C implementation.

Is JTAG functionality enabled by default?

JTAG is implemented per IEEE 1149.1 and is functional upon power-up; no configuration is required to access boundary scan. The TAP controller operates independently of memory operation, allowing in-system test and debug without disrupting SRAM functionality or timing.