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Cypress Semiconductor Corp CY7C1425KV18-250BZXC

Part No.:
CY7C1425KV18-250BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1425KV18-250BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,395

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Product details

Overview

CY7C1425KV18 from Cypress Semiconductor is a 4M × 9 (36-Mbit) QDR® II SRAM with dual independent read/write ports, 333 MHz clock operation (666 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent burst reads/writes with 1.5-cycle read latency (DOFF = HIGH) and supports high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1425KV18 datasheet, CY7C1425KV18 pinout, CY7C1425KV18 application, or CY7C1425KV18 equivalent, key selection criteria include QDR II two-word burst timing, echo clock (CQ/CQ) support for source-synchronous capture, FBGA-165 package compatibility, and HSTL-18 I/O compliance at 333 MHz.

Technical Context

The CY7C1425KV18 implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses four dedicated clocks-K/K for address/data input timing and C/C for output timing-enabling precise DDR edge alignment and skew management via echo clocks CQ/CQ.

Internally, it organizes memory as two 2M × 9 arrays accessed via a shared 21-bit address bus latched on alternating K/K edges. Write operations are self-timed and synchronous; read latency is configurable between 1 cycle (DOFF = LOW) and 1.5 cycles (DOFF = HIGH), with full data coherency maintained across concurrent accesses.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (4M × 9 configuration)
Max Clock Frequency 333 MHz - enables 666 MT/s DDR throughput per port
Read Latency 1.5 cycles (DOFF = HIGH) - balances timing margin and pipeline depth
Core Supply 1.8 V ±0.1 V - defines internal logic voltage and power integrity requirements
I/O Supply Range 1.4 V to 1.8 V - supports HSTL-18 interface compliance and mixed-voltage system integration
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory placement
Burst Length Two-word - fixed burst transfers both words per access, optimizing bandwidth efficiency

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and HSTL-18 compatible I/Os.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data inputs 9-bit parallel data sampled on rising edge of K clock; used only when WPS is asserted
Q[8:0] Synchronous read data outputs 9-bit parallel data driven on rising edges of C/C clocks; tristated when RPS is deasserted
K / K Positive/negative input clocks Edge-aligned clocks for latching addresses, D[8:0], WPS, BWS0, and RPS; K rising edge initiates all accesses
C / C Positive/negative output clocks Deskew pair for Q[8:0] output timing; referenced to controller's output path for deterministic capture
CQ / CQ Echo clocks Free-running copies of C/C synchronized to output clock domain; simplify source-synchronous latch design at receiver
WPS Write port select Active-low signal enabling write transactions; ignored if deasserted, preventing unintended writes
RPS Read port select Active-low signal enabling read transactions; output drivers tristate automatically upon deassertion
BWS0 Byte write select Active-low control for D[8:0]; allows partial-word writes without disturbing other bytes in same location
DOFF Read latency mode select HIGH configures 1.5-cycle latency; LOW selects 1-cycle latency - directly impacts timing closure in controller interface
VDD / VDDQ / VSS Power and ground terminals VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; multiple VSS balls ensure low-inductance return paths for high-speed switching

Key Features

Feature Design Value
Independent read/write ports Enables true concurrent access - no bus turnaround required, increasing effective bandwidth by up to 2× vs. common-I/O SRAMs
Two-word burst architecture Guarantees two sequential words delivered per access, reducing address overhead and simplifying burst-length control in controllers
Echo clock support (CQ/CQ) Provides receiver-side clock reference aligned to Q[8:0] output edges - eliminates need for complex PCB trace length matching
Programmable read latency (DOFF) Allows trade-off between timing margin (1.5-cycle) and pipeline depth (1-cycle), adapting to controller capabilities and board layout constraints
HSTL-18 compatible I/Os Ensures signal integrity at 666 MT/s with controlled drive strength and termination support - critical for multi-drop memory buses

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet line cards with real-time traffic shaping.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as temporary FIFO buffer with simultaneous write (ingress) and read (egress) operations at 333 MHz.

Use Value: Eliminates bus contention and turnaround delay, sustaining >5 Gbps aggregate throughput per port under worst-case burst conditions.

Use Scenario: Capturing high-resolution waveform samples from multi-channel ADCs in automated test systems with deterministic latency.

IC Role / Device Role / Timing Role: Synchronous memory staging buffer interfacing with FPGA-based pattern generators and analyzers using source-synchronous CQ/CQ timing.

Use Value: Echo clocks enable sub-100 ps setup/hold margin at 666 MT/s, ensuring reliable capture without retiming logic.

Telecom Baseband Processing Real-Time Video Frame Buffering

Use Scenario: Supporting parallel FFT/IFFT engines in LTE/5G baseband units requiring low-latency access to coefficient and sample buffers.

IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by multiple DSP cores via dedicated read/write ports and depth-expanded configurations.

Use Value: 1.5-cycle latency mode (DOFF = HIGH) provides sufficient timing margin for multi-FPGA interconnects while maintaining 333 MHz operation.

Use Scenario: Holding uncompressed 4K video frames during format conversion and color space transformation in broadcast encoders.

IC Role / Device Role / Timing Role: High-bandwidth frame store interfaced to video processing ASICs using HSTL-18 signaling and burst-aligned addressing.

Use Value: Two-word burst transfers match 16-bit pixel packing, achieving 12 Gbps sustained bandwidth with minimal controller overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit QDR II+, 250 MHz max, 1.5 V core, LVDS-compatible outputs Lower frequency ceiling and different I/O standard - requires level-shifting for HSTL-18 systems Select when legacy 250 MHz timing budget or LVDS interface compatibility is prioritized over peak bandwidth
ISSI IS61QW25636A-250BQ 36-Mbit QDR II, 250 MHz max, 1.8 V core, HSTL-18 I/O, 165-ball FBGA Same package and I/O standard but lower max frequency - reduces timing margin requirements Choose for cost-sensitive designs where 250 MHz suffices and second-source availability is critical

Compared with CY7C1425KV18, IDT72T3615L10BG trades bandwidth for LVDS interoperability, while IS61QW25636A-250BQ offers drop-in package compatibility at reduced speed - both require revalidation of echo clock timing and DOFF-dependent latency paths.

Availability

CY7C1425KV18 is available at Aetrix Electronics and suitable for network line cards, high-speed test equipment, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1425KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR® II SRAM product line targets high-throughput, low-latency buffering in infrastructure equipment where deterministic timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1425KV18?

The DOFF (Data Output OFFset) pin configures read latency mode: when HIGH, it enables 1.5-cycle latency for improved timing margin; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly affects the C/C clock-to-Q[8:0] valid window and must be matched to controller capabilities and PCB routing delays.

Can CY7C1425KV18 operate with only K and C clocks (single-clock mode)?

Yes - in single-clock mode, K serves as both input and output clock, and C is unused. Q[8:0] data is driven on K's rising edge, and CQ echoes K instead of C. This reduces clock routing complexity but sacrifices deskew capability and limits maximum frequency to 250 MHz per Cypress documentation.

How does byte write select (BWS0) work in CY7C1425KV18?

BWS0 is an active-low signal controlling all 9 bits of D[8:0]. When asserted, the corresponding byte is written; when deasserted, that byte remains unaltered. Unlike wider variants, CY7C1425KV18 uses only BWS0 - no BWS1–BWS3 - because its 9-bit width maps to a single byte group.

Is the 165-ball FBGA package of CY7C1425KV18 pin-compatible with CY7C1412KV18 or CY7C1414KV18?

No - although all three share the same 165-ball FBGA mechanical outline, their pin functions differ significantly. For example, CY7C1412KV18 uses BWS1 for upper byte control, and CY7C1414KV18 assigns additional BWS signals and data bits to pins reused as NC or auxiliary functions in CY7C1425KV18. Direct substitution is not electrically valid.

CY7C1425KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1425KV18-250BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1425KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1425KV18-250BZXC reliable?

The price and inventory of CY7C1425KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1425KV18-250BZXC is usually 5 days.

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CY7C1425KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1425KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1425KV18-250BZXC?

For technical support, including CY7C1425KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1425KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1425KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1425KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1425KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1425KV18-250BZXC?

All CY7C1425KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1425KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1425KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1425KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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