Cypress Semiconductor Corp CY7C1426KV18-300BZXC
- Part No.:
- CY7C1426KV18-300BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1426KV18-300BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,100
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1426KV18-300BZXC from Cypress Semiconductor is a 36-Mbit QDR® II SRAM with 4 M × 9 organization, 300 MHz maximum operating frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces, four-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking line cards and packet buffer applications.
For engineers reviewing the CY7C1426KV18-300BZXC datasheet, CY7C1426KV18-300BZXC pinout, CY7C1426KV18-300BZXC application, or CY7C1426KV18-300BZXC equivalent, key selection considerations include concurrent read/write bandwidth, DOFF-controlled read latency (1 or 1.5 cycles), FBGA-165 package compatibility, and HSTL-18 I/O drive compliance.
Technical Context
This QDR II SRAM uses dual independent clock domains: K/K for address/data input timing and C/C for output timing, enabling true concurrent read and write operations without bus turnaround. Its internal pipelined architecture supports synchronous self-timed writes and full data coherency across both ports.
The device integrates a PLL for precise data placement, JTAG 1149.1 test access, and programmable impedance via ZQ pin. Read latency is configurable via DOFF pin-1 cycle when LOW, 1.5 cycles when HIGH-allowing trade-offs between timing margin and throughput in high-speed switch fabric designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (4 M × 9 configuration) |
| Max Clock Frequency | 300 MHz - determines peak 2.4 Gbps per port (DDR @ 600 MT/s) |
| Core Supply Voltage | 1.8 V ±0.1 V - defines minimum power rail stability requirement for internal logic |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V HSTL-18 systems |
| Read Latency | 1 or 1.5 cycles - selected by DOFF pin; impacts first-data-to-clock timing in pipeline stages |
| Burst Length | Four-word - reduces effective address bus toggling rate by 4× vs. single-word access |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in dense PCB layouts |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Write data inputs | 9-bit synchronous data bus latched on rising edge of K clock; supports byte-write via BWS0 |
| Q[8:0] | Read data outputs | 9-bit DDR outputs driven on rising edges of C/C clocks; echo-clocked for timing closure |
| K / K | Input clocks | Dual-phase system clock pair for address and write data sampling; only rising edges used |
| C / C | Output clocks | Dual-phase clocks for read data output timing; minimizes skew vs. Q[8:0] signals |
| CQ / CQ | Echo clocks | Delayed copies of C/C; simplify receiver-side capture in FPGA/ASIC PHY layers |
| DOFF | Latency control | Active-HIGH selects 1.5-cycle read latency; LOW enables 1-cycle mode for minimal latency |
| BWS0 | Byte write select | Active-LOW enables writing all 9 bits of D[8:0]; required for full-width writes |
| RPS / WPS | Port selects | Active-LOW enables read or write port independently; enables depth expansion |
| VDD / VDDQ / VSS | Power terminals | Separate 1.8 V core (VDD), 1.4–1.8 V I/O (VDDQ), and ground (VSS) rails for noise isolation |
| ZQ | Impedance calibration | Connects to external 240 Ω resistor to ground for HSTL output driver calibration |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables simultaneous 600 MT/s read + 600 MT/s write on same clock domain without arbitration delay |
| Four-word burst architecture | Reduces address bus toggle rate to 75 MHz at 300 MHz clock - lowers EMI and routing complexity |
| HSTL-18 compatible I/O | Meets JEDEC JESD8-15A for 1.8 V operation with programmable drive strength via ZQ calibration |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant test access for interconnect verification in high-density BGA layouts |
| Configurable read latency | DOFF pin allows runtime selection between 1-cycle (low-latency) and 1.5-cycle (higher timing margin) modes |
Applications
| Network Packet Buffer | High-Speed Switch Fabric |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, synchronized to 300 MHz switch clock. Use Value: Concurrent read/write eliminates arbitration stalls, enabling line-rate forwarding at 10 Gbps+ with sub-10 ns latency variation. | Use Scenario: Interfacing between multiple ASIC pipeline stages in multi-terabit switching chips. IC Role / Device Role / Timing Role: QDR II interface bridging upstream and downstream processing blocks using echo-clocked CQ/CQ for deterministic capture. Use Value: Four-word burst reduces address bus congestion; 1.5-cycle latency mode provides timing margin for long trace lengths. |
| Telecom Line Card Memory | Test Equipment Data Capture |
Use Scenario: Real-time buffering of SONET/OTN frame payloads in optical transport modules. IC Role / Device Role / Timing Role: High-bandwidth memory serving as elastic store between framer and mapper logic running at 300 MHz DDR. Use Value: Separate K/K and C/C clocks isolate input setup and output hold timing, easing PCB layout for 600 MT/s signaling. | Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Write-port receives parallel stimulus data at 300 MHz; read-port streams captured results to analysis engine. Use Value: Full data coherency ensures latest-written values are always available on read-critical for real-time debug visibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+, 100 MHz max, LVDS I/O, different pinout and timing model | Lower speed; requires differential signaling; not drop-in compatible | Select only if system operates below 166 MHz and requires LVDS interface |
| AS7C33618B-300BIN | 36-Mbit QDR II, 300 MHz, but 1.5 V core/VDDQ, no DOFF latency control | Lacks configurable read latency; fixed 1-cycle latency only | Choose when latency consistency is prioritized over flexibility; verify VDDQ compatibility |
Compared with IDT72T3615L10BG and AS7C33618B-300BIN, CY7C1426KV18-300BZXC uniquely supports 1.8 V core, DOFF-selectable latency, and HSTL-18 I/O in a standardized FBGA-165 package-making it optimal for new 300 MHz networking designs requiring timing adaptability and power efficiency.
Availability
CY7C1426KV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffers, high-speed switch fabrics, telecom line card memory, and ATE data capture systems requiring stable component supply across extended production lifecycles.
Supply support for CY7C1426KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1426KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for ultra-low-latency, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write throughput and timing predictability are critical.
FAQ
What is the function of the DOFF pin on CY7C1426KV18-300BZXC?
The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin; when LOW, it selects 1-cycle latency for minimal delay. This setting directly affects the number of clock cycles between address assertion and valid Q[8:0] output, and must be held stable during operation.
Can CY7C1426KV18-300BZXC operate with a single clock domain?
Yes - the device supports single-clock mode where C and C are tied to K and K respectively. In this configuration, read data is output on the same clock edges used for address and write data sampling, simplifying clock distribution at the cost of reduced timing flexibility compared to dual-clock operation.
What is the purpose of the ZQ pin and how should it be connected?
The ZQ pin enables output driver impedance calibration for HSTL-18 I/O. It must be connected to a precision 240 Ω resistor to ground. During power-up or calibration command, the device measures this reference to adjust internal termination and drive strength, ensuring signal integrity across process/voltage/temperature variations.
How does depth expansion work with RPS and WPS pins?
RPS (Read Port Select) and WPS (Write Port Select) are active-LOW enables that gate access to the respective port. When multiple CY7C1426KV18 devices are stacked, asserting RPS/WPS on only one device per transaction allows logical depth expansion (e.g., 8 M × 9) while maintaining independent port control per chip - essential for scalable buffer architectures.
CY7C1426KV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 4M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1426KV18-300BZXC FAQ
1.How can I place an order for CY7C1426KV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1426KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1426KV18-300BZXC reliable?
The price and inventory of CY7C1426KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1426KV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1426KV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1426KV18-300BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1426KV18-300BZXC?
CY7C1426KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1426KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1426KV18-300BZXC?
For technical support, including CY7C1426KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1426KV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1426KV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1426KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1426KV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1426KV18-300BZXC?
All CY7C1426KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1426KV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1426KV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1426KV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1426KV18-300BZXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

