Cypress Semiconductor Corp CY7C1460KV25-200BZI
- Part No.:
- CY7C1460KV25-200BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1460KV25-200BZI.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:661
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Product details
Overview
CY7C1460KV25-200BZI from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with NoBL™ architecture, 2.5 V core/I/O supply, on-chip ECC, and 200 MHz operation (3.2 ns clock-to-output). It supports zero-wait-state back-to-back read/write cycles in high-throughput networking and packet buffering applications.
For engineers reviewing the CY7C1460KV25-200BZI datasheet, CY7C1460KV25-200BZI pinout, CY7C1460KV25-200BZI application, or CY7C1460KV25-200BZI equivalent, key selection criteria include burst mode support (linear/interleaved), byte-write capability with BWa–BWd controls, synchronous self-timed writes, JTAG boundary scan compliance, and TQFP-100 packaging with ZZ sleep mode.
Technical Context
This SRAM implements fully registered pipelined I/O with all inputs and outputs synchronized to the rising edge of CLK, qualified by CEN. Its NoBL™ logic enables true back-to-back operations without bus latency, eliminating wait states across consecutive reads and writes.
The device integrates on-chip ECC encoding/decoding for single-bit error correction and double-bit error detection, reducing soft error rate in radiation-sensitive environments. Burst addressing supports both linear and interleaved orders, controlled via MODE and ADV/LD signals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 configuration) |
| Max Clock Frequency | 200 MHz - enables 5 ns cycle time for sustained burst throughput |
| Access Time | 3.2 ns - clock-to-output delay at 200 MHz, critical for timing closure in high-speed buses |
| Supply Voltage | 2.5 V core and I/O - compatible with legacy 2.5 V system rails and low-power design targets |
| ECC Support | On-chip SEC-DED - corrects single-bit errors and detects double-bit errors in real time |
| Burst Capability | Linear or interleaved - configurable via MODE pin for optimal cache-line or packet-aligned access |
| Sleep Mode | ZZ active-low - reduces standby current to <100 µA while preserving data integrity |
Pinout & Package
Package: 100-pin JEDEC-standard Pb-free TQFP (14 mm × 14 mm, 0.5 mm pitch), RoHS-compliant, industrial temperature range (–40°C to +85°C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Input | 20-bit synchronous address bus sampled on rising CLK edge; selects one of 1M locations in 1M × 36 mode |
| DQa–DQd, DQPa–DQPd | Data I/O (36-bit + 4-bit parity) | 36-bit bidirectional data path with dedicated 4-bit parity I/O; direction controlled by OE and internal write sequencing |
| BWa–BWd | Byte Write Select | Four independent active-low controls enabling partial writes to 9-bit subwords (DQa/DQPa, etc.) without affecting other bytes |
| CLK, CEN | Clock & Enable | CLK qualified by CEN: CEN=LOW enables clock recognition; CEN=HIGH extends previous cycle without deselection |
| CE1, CE2, CE3 | Chip Enable Group | Three-level synchronous chip select (CE1/CE3 active LOW, CE2 active HIGH) for multi-bank memory mapping |
| ADV/LD, MODE | Burst Control | ADV/LD toggles burst counter or loads new address; MODE selects linear vs. interleaved burst order |
| ZZ | Deep Sleep | Active-low hardware sleep control that gates internal clocks and reduces ICC to microamp range |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Enables unlimited true back-to-back read/write operations with zero wait states, maximizing bus utilization in packet-switched systems |
| Synchronous Self-Timed Writes | Eliminates external write pulse timing constraints; internal logic completes write within fixed clock cycles regardless of process/voltage/temp |
| JTAG Boundary Scan (IEEE 1149.1) | Supports IEEE-compliant board-level test and interconnect verification without requiring additional test pads or fixtures |
| Byte-Write with Parity | Independent BWa–BWd control over four 9-bit data+parity groups allows precise partial updates while maintaining ECC integrity |
| Internally Self-Timed Output Buffer | Removes need for asynchronous OE strobing; output registers align data precisely to CLK edge, simplifying timing analysis |
Applications
| Telecom Line Cards | Network Packet Buffers |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in modular line cards with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer between ingress/egress MACs and traffic manager ASICs. Use Value: 200 MHz zero-wait-state operation ensures deterministic 5 ns cycle time, enabling full wire-speed buffering at 10 Gbps line rates. | Use Scenario: Temporary storage of fragmented packets during deep packet inspection in next-generation firewalls. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as a ping-pong buffer for parallel packet analysis and reassembly. Use Value: On-chip ECC prevents silent corruption of inspected payloads in mission-critical security infrastructure. |
| Radar Signal Processing | Industrial PLC Data Logging |
Use Scenario: Capturing high-rate ADC samples from phased-array radar receivers before FFT processing. IC Role / Device Role / Timing Role: Burst-mode SRAM acting as first-level acquisition memory with linear burst addressing aligned to sample frames. Use Value: Linear burst mode reduces address overhead by 75% versus single-access mode, sustaining >1.6 GB/s effective bandwidth. | Use Scenario: Reliable short-term event logging in factory-floor PLCs exposed to EMI and voltage transients. IC Role / Device Role / Timing Role: Nonvolatile-shadowed SRAM holding alarm timestamps, sensor snapshots, and fault codes during brownouts. Use Value: ZZ sleep mode draws <100 µA while retaining data, extending backup battery life beyond 72 hours. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 36-Mbit (1M × 36), 150 MHz max, no on-chip ECC, 3.3 V I/O only | Lacks ECC and 200 MHz performance; suitable only for non-critical, lower-speed buffering | Select only if system operates at ≤150 MHz and ECC is implemented externally |
| ISSI IS61WV102436B | 36-Mbit (1M × 36), 167 MHz max, no ECC, 3.3 V core/I/O, no JTAG | Lower speed grade and missing ECC/JTAG limit use in telecom or safety-critical designs | Consider only for cost-sensitive industrial control where 167 MHz and no ECC suffice |
Compared with IDT72V2115L15PF and IS61WV102436B, CY7C1460KV25-200BZI delivers higher bandwidth (200 MHz), integrated ECC for SER mitigation, and IEEE 1149.1 testability-making it uniquely suited for telecom infrastructure and high-reliability embedded systems.
Availability
CY7C1460KV25-200BZI is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, radar signal acquisition, and industrial PLC data logging requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1460KV25-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.
CY7C1460KV25 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput buffering in packet-switched networks and real-time signal processing systems.
FAQ
What is the function of the MODE pin on CY7C1460KV25-200BZI?
The MODE pin selects burst addressing order: logic HIGH configures linear burst (sequential increment), logic LOW selects interleaved burst (bit-swapped increment). This setting is latched at power-up or reset and determines how ADV/LD advances the internal address counter during burst accesses.
Does CY7C1460KV25-200BZI require external termination resistors on DQ lines?
No. The device features internally calibrated output drivers with programmable drive strength, eliminating the need for external series or parallel termination. Layout guidelines recommend 50 Ω controlled-impedance traces and proper VDDQ/VSS decoupling per the datasheet's PCB design section.
How does the ZZ sleep mode interact with data retention?
In ZZ mode, the device disables internal clocks and analog circuitry while maintaining SRAM cell bias, retaining all stored data indefinitely as long as VDD and VDDQ remain within specification (2.375 V to 2.625 V). Exit time from ZZ is 20 ns maximum, with no refresh required.
Can CY7C1460KV25-200BZI operate in 2M × 18 configuration?
No. CY7C1460KV25-200BZI is strictly a 1M × 36 device. The 2M × 18 configuration is supported only by CY7C1462KV25 variants (e.g., CY7C1462KV25-200BZI), which have different pinouts, byte-write grouping (BWa–BWb only), and address mapping.
CY7C1460KV25-200BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1460KV25-200BZI FAQ
1.How can I place an order for CY7C1460KV25-200BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1460KV25-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1460KV25-200BZI reliable?
The price and inventory of CY7C1460KV25-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1460KV25-200BZI is usually 5 days.
3.What payment methods are accepted for CY7C1460KV25-200BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1460KV25-200BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1460KV25-200BZI?
CY7C1460KV25-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1460KV25-200BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1460KV25-200BZI?
For technical support, including CY7C1460KV25-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1460KV25-200BZI requirements.
6.How does Aetrix verify that CY7C1460KV25-200BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1460KV25-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1460KV25-200BZI meets industry standards.
7.What is the process for return or replacement of CY7C1460KV25-200BZI?
All CY7C1460KV25-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1460KV25-200BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1460KV25-200BZI part is unused and in its original packaging.
Return procedure for CY7C1460KV25-200BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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