Cypress Semiconductor Corp CY7C1460KV25-200BZXI

Overview

CY7C1460KV25-200BZXI from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with NoBL™ architecture, 2.5 V core/I/O supply, on-chip ECC, and 200 MHz operation (3.2 ns access time). It supports zero-wait-state back-to-back read/write cycles in high-throughput networking and packet buffering applications.

For engineers reviewing the CY7C1460KV25-200BZXI datasheet, CY7C1460KV25-200BZXI pinout, CY7C1460KV25-200BZXI application, or CY7C1460KV25-200BZXI equivalent, key selection criteria include burst mode support (linear/interleaved), byte-write capability with BWa–BWd controls, synchronous self-timed writes, JTAG boundary scan compliance, and 100-pin TQFP packaging with verified pin mapping.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs pass through input registers clocked on the rising edge of CLK; all outputs are driven through output registers also clocked on CLK's rising edge. The internal NoBL™ logic eliminates bus latency by enabling true consecutive read/write transitions without wait states.

It integrates on-chip ECC encoding/decoding for single-bit error correction and double-bit error detection, reducing soft error rate in radiation-sensitive environments. Burst addressing supports both linear and interleaved orders, and sleep mode (ZZ) is controlled via dedicated pin for dynamic power management.

Key Specifications

Pinout & Package

The CY7C1460KV25-200BZXI is packaged in a JEDEC-standard Pb-free 100-pin Thin Quad Flat Package (TQFP) with 0.5 mm pitch and exposed thermal pad. Pin layout supports standard PCB routing and thermal dissipation for high-speed memory subsystems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102436B, the CY7C1460KV25-200BZXI uniquely combines 200 MHz operation, on-chip SEC-DED ECC, IEEE 1149.1 JTAG, and deep-sleep mode - making it optimal for mission-critical, high-reliability embedded memory subsystems requiring deterministic latency and fault resilience.

Availability

CY7C1460KV25-200BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and radar signal processing buffer applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1460KV25-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C1460KV25 series belongs to Cypress' high-speed synchronous SRAM product line, designed specifically for zero-latency, ECC-enabled memory subsystems in networking infrastructure, test instrumentation, and real-time signal processing platforms.

FAQ

What is the function of the MODE pin on CY7C1460KV25-200BZXI?

The MODE pin selects burst addressing order: logic HIGH configures linear burst (sequential increment), while LOW selects interleaved burst (bit-reversed increment). This setting is latched at power-up or reset and remains static during operation - it must match the host controller's burst protocol to prevent address misalignment and data corruption.

Does CY7C1460KV25-200BZXI support asynchronous read operations?

No. All read operations are strictly synchronous: address and control signals (CE1/CE2/CE3, ADV/LD, OE) are sampled only on the rising edge of CLK. There is no asynchronous read path - even OE is masked during write cycles and first-clock recovery, ensuring deterministic timing behavior aligned to the system clock domain.

How does the on-chip ECC operate during write and read cycles?

ECC encoding occurs automatically during every write: 4 parity bits (DQPa–DQPd) are generated per 32-bit word and stored alongside data. During reads, the full 36-bit word (32 data + 4 parity) is decoded; single-bit errors are corrected in real time and flagged via internal status, while double-bit errors trigger uncorrectable error indication - no software intervention required.

Can CY7C1460KV25-200BZXI be used in place of a ZBT SRAM?

Yes - it is pin-compatible and functionally equivalent to ZBT devices per Cypress documentation. Key behavioral alignment includes identical burst protocols, byte-write signaling, and clock-enable operation. However, differences exist: CY7C1460KV25-200BZXI adds ECC, ZZ sleep, and JTAG, and uses NoBL™ instead of ZBT's separate read/write clocks - verify timing margins and feature enablement in legacy ZBT designs.