Cypress Semiconductor Corp CY7C1470BV25-167BZC

Overview

CY7C1470BV25-167BZC from Cypress Semiconductor is a 72-Mbit synchronous pipelined SRAM with No Bus Latency™ (NoBL™) architecture, configured as 2M × 36-bit. It operates at 167 MHz with 3.4 ns maximum access time, supports zero-wait-state back-to-back read/write operations, and uses single 2.5V VDD and 2.5V VDDQ supplies. It is deployed in high-throughput packet buffering and network switch data path memory subsystems.

For engineers reviewing the CY7C1470BV25-167BZC datasheet, CY7C1470BV25-167BZC pinout, CY7C1470BV25-167BZC application, or CY7C1470BV25-167BZC equivalent, key selection criteria include burst order control (linear/interleaved), byte-write select granularity (BWa–BWd), synchronous self-timed write timing, and JTAG boundary-scan compliance for system-level testability.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. The internal burst counter-configured via MODE pin-supports linear or interleaved burst orders for sequential accesses without external address incrementing.

It features three synchronous chip enables (CE1 active-low, CE2 active-high, CE3 active-low) for flexible bank decoding, asynchronous OE for output tri-state control, and CEN to suspend clock recognition without deselection. Write operations use on-chip self-timed logic qualified by WE and BWx signals, eliminating external write pulse timing constraints.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 14 mm, 0.5 mm pitch), Pb-free compliant, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1470BV25-250BZC, this -167BZC variant trades 83 MHz bandwidth for lower power (400 mA vs. 450 mA) and relaxed signal integrity; versus AS7C3256B-167JC, it delivers deterministic zero-wait-state throughput but at higher unit cost and pin count.

Availability

CY7C1470BV25-167BZC is available at Aetrix Electronics and suitable for network switch buffering, telecom line card memory, high-speed test equipment, and radar signal processing requiring stable component supply across extended production lifecycles.

Supply support for CY7C1470BV25-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1470BV25 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in packet-switched and real-time signal processing systems.

FAQ

What is the function of the MODE pin, and how does it affect burst behavior?

The MODE pin is a static strap input that selects burst order: HIGH enables interleaved burst (e.g., 0,2,1,3), LOW enables linear burst (e.g., 0,1,2,3). It must be held stable during operation and defaults HIGH if left floating. This setting determines how the internal burst counter increments during sequential accesses without new address inputs.

Can CY7C1470BV25-167BZC operate with only VDD applied, or is VDDQ required?

VDDQ is mandatory. The device requires both 2.5V VDD (core logic) and 2.5V VDDQ (I/O drivers) to function. Omitting VDDQ will prevent data I/O operation, as DQa–DQd and DQPa–DQPd buffers are powered exclusively from VDDQ. Both rails must be present and within ±5% tolerance.

How does the "ZZ" Sleep Mode reduce power, and what happens to stored data?

Asserting ZZ places the SRAM in ultra-low-power sleep mode, reducing ICC to ≤120 mA while retaining all stored data. Internal refresh is maintained via on-chip circuitry; no external action is required to preserve memory contents. Exit is synchronous on next valid CLK edge with CEN active.

Is JTAG boundary scan functional when CEN is deasserted or the device is deselected?

Yes. IEEE 1149.1 JTAG operation is independent of CEN, CE1–CE3, or CLK activity. TDI, TDO, TCK, and TMS remain fully operational for board-level interconnect testing even when the SRAM is in sleep mode, deselected, or clock-gated.