Cypress Semiconductor Corp CY7C1470BV25-167BZI

Overview

CY7C1470BV25-167BZI from Cypress Semiconductor is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 167 MHz with 3.4 ns maximum access time, 400 mA max operating current, and single 2.5V VDD/VDDQ supply. It delivers zero-wait-state back-to-back read/write operations in high-throughput networking packet buffers.

For engineers reviewing the CY7C1470BV25-167BZI datasheet, CY7C1470BV25-167BZI pinout, CY7C1470BV25-167BZI application, or CY7C1470BV25-167BZI equivalent, key selection criteria include burst mode (linear/interleaved), byte-write select granularity (BWa–BWd), synchronous self-timed write control, and JTAG boundary-scan support for system-level testability.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to the same clock edge. The internal NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states.

Burst capability supports linear or interleaved order via MODE pin strap; byte-write control uses four independent BWa–BWd signals (active LOW) to enable selective 9-bit writes per data group (DQa/DQPa through DQd/DQPd); OE is asynchronous but masked during write-data phases to prevent bus contention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 14 mm, 0.5 mm pitch), Pb-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L10PF and IS61WV102436B, CY7C1470BV25-167BZI uniquely delivers guaranteed zero-wait-state operation, MODE-configurable burst sequencing, and integrated JTAG - critical for deterministic real-time buffering where latency predictability and test coverage are non-negotiable.

Availability

CY7C1470BV25-167BZI is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card caches, industrial PLC data logs, and test equipment pattern memories requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1470BV25-167BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure.

CY7C1470BV25 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, burst-intensive buffering in packet-switched and real-time control systems.

FAQ

What is the function of the MODE pin on CY7C1470BV25-167BZI?

The MODE pin is a static strap input that selects burst order: pulled HIGH (or left floating) configures interleaved burst mode; pulled LOW selects linear burst mode. It must be held stable during operation - changing MODE mid-burst causes undefined address sequencing and potential data corruption. This setting is sampled only at power-up or reset recovery.

How does the CY7C1470BV25-167BZI handle bus contention during write cycles?

During the data portion of a write sequence, the device automatically tri-states all DQ and DQP outputs regardless of OE state - this is hardwired behavior, not controlled by OE. Combined with synchronous write enable (WE) and byte-write selects (BWa–BWd), it ensures no driver conflict occurs when bidirectional pins switch from output to input roles within the same clock cycle.

Can CY7C1470BV25-167BZI operate with only two chip enables asserted?

No. All three chip enables - CE1 (LOW), CE2 (HIGH), and CE3 (LOW) - must be simultaneously active at the rising edge of CLK to initiate any access. CE2's active-HIGH polarity is intentional for complementary bank decoding; using only two CEs results in deselected state and no memory access, even if address and control signals are valid.

Is the ZZ Sleep Mode compatible with JTAG boundary-scan operation?

Yes. ZZ Sleep Mode reduces core current while retaining data and preserving JTAG controller visibility - TCK, TMS, TDI, and TDO remain fully functional during ZZ mode, allowing in-system test and debug without exiting low-power state. However, TDO output is disabled unless TCK is actively toggled, per IEEE 1149.1 specification.