Cypress Semiconductor Corp CY7C1470BV25-167BZXC

Overview

CY7C1470BV25-167BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 167 MHz with 3.4 ns maximum access time, supports zero-wait-state back-to-back reads/writes, and uses single 2.5V VDD with separate 2.5V VDDQ I/O supply.

For engineers reviewing the CY7C1470BV25-167BZXC datasheet, CY7C1470BV25-167BZXC pinout, CY7C1470BV25-167BZXC application, or CY7C1470BV25-167BZXC equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select granularity (BWa–BWd), synchronous self-timed write timing, and JEDEC-compliant 100-pin TQFP packaging with JTAG boundary scan support.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. The internal NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states.

It features three synchronous chip enables (CE1 active-low, CE2 active-high, CE3 active-low), asynchronous OE for tri-state control, Clock Enable (CEN) for cycle extension, and ADV/LD to load or advance the burst counter. Burst order (linear or interleaved) is set by the MODE strap pin, which must remain static during operation.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 14 mm, 0.5 mm pitch), RoHS-compliant Pb-free, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L10PF and IS61WV102436B, CY7C1470BV25-167BZXC delivers double the density, 67% higher throughput, and integrated burst/byte-write control - reducing system-level timing risk and FPGA logic burden in next-gen packet processing.

Availability

CY7C1470BV25-167BZXC is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, and radar signal processors requiring stable component supply, long-lifecycle support, and RoHS-compliant 100-pin TQFP packaging.

Supply support for CY7C1470BV25-167BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth buffering in real-time data-path applications such as packet switching, baseband processing, and high-speed test equipment.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin is a static strap input that selects burst order: pulled HIGH for interleaved burst, LOW for linear burst. It must be held stable during operation - floating defaults to HIGH (interleaved). This setting determines how the internal burst counter increments addresses and cannot be changed dynamically during active bursts.

How does the CY7C1470BV25-167BZXC handle bus contention during write cycles?

During the data portion of a write sequence, the device automatically tri-states all DQ and DQP outputs regardless of OE state - preventing bus contention without requiring external bus arbitration logic. This behavior is hardwired in the NoBL™ control logic and occurs synchronously with the write data capture clock edge.

Can CE2 be used as an active-low enable like CE1 and CE3?

No - CE2 is defined as active-HIGH per the datasheet and pin definition table. Using it as active-low would violate the device's synchronous enable protocol and may cause undefined behavior or failed accesses. CE1 and CE3 must both be active-low, while CE2 must be active-high for proper chip selection.

Is the ZZ Sleep Mode supported in the CY7C1470BV25-167BZXC variant?

Yes - the ZZ pin is present and functional in the 100-pin TQFP package (Pin 81), enabling hardware-controlled deep sleep mode to reduce standby current. When asserted LOW, ZZ places the device in low-power state with retention of memory contents; recovery time is specified as 20 ns max after ZZ deassertion.