Cypress Semiconductor Corp CY7C1470BV25-167BZXI

Overview

CY7C1470BV25-167BZXI from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with 3.4 ns maximum access time, supports byte write via four BW inputs, uses single 2.5 V core supply and 2.5 V I/O supply (VDDQ), and delivers zero-wait-state back-to-back read/write capability in burst or single-access modes.

For engineers reviewing the CY7C1470BV25-167BZXI datasheet, CY7C1470BV25-167BZXI pinout, CY7C1470BV25-167BZXI application, or CY7C1470BV25-167BZXI equivalent, key selection considerations include its 100-pin TQFP package, synchronous self-timed write control, JTAG boundary scan support, linear/interleaved burst order selection via MODE pin, and compatibility with ZBT™-based system designs requiring deterministic latency.

Technical Context

The device implements fully registered pipelined operation: all address, control, and data signals are latched on the rising edge of CLK, with internal logic qualified by CEN. Output drivers are synchronously tri-stated during write data cycles to prevent bus contention, and OE remains masked during those phases regardless of state.

NoBL™ architecture eliminates bus latency by enabling consecutive read/write operations without wait states. Burst addressing is controlled by ADV/LD and MODE pins, supporting both linear and interleaved orders, while on-chip self-timed write circuitry ensures reliable data capture independent of external timing margins.

Key Specifications

Pinout & Package

Package: JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1470BV25-250BZXI, the -167BZXI trades 83 MHz bandwidth for relaxed timing margins and lower power; versus AS7C3256B-167JCIN, it provides 2.25× density, parity protection, JTAG testability, and true NoBL™ zero-wait-state operation-making it irreplaceable in telecom and real-time control systems.

Availability

CY7C1470BV25-167BZXI is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and industrial real-time controllers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470BV25-167BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, zero-wait-state memory subsystems in high-speed digital signal processing and packet-forwarding applications.

FAQ

What is the function of the MODE pin on CY7C1470BV25-167BZXI?

The MODE pin is a static strap input that selects burst address order: logic HIGH configures interleaved burst mode, while logic LOW selects linear burst mode. It must remain stable during device operation and defaults to HIGH (interleaved) if left floating. This setting directly determines how the internal address counter increments during burst reads/writes and cannot be changed dynamically.

How does the ZZ (Sleep) mode affect power consumption and data retention?

When the ZZ pin is asserted LOW, the device enters low-power sleep mode with maximum CMOS standby current limited to 120 mA, while retaining all stored data. Core logic is halted, clocks are ignored, and I/Os enter high-impedance state. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C) as long as VDD and VDDQ remain within specification.

Can CY7C1470BV25-167BZXI operate with only two Chip Enables active?

No. The device requires all three Chip Enables (CE1 = LOW, CE2 = HIGH, CE3 = LOW) to be simultaneously asserted at the rising edge of CLK to enable memory access. Any deviation from this 3-input decode pattern results in chip deselection, forcing outputs into high-impedance and blocking internal memory operations regardless of other control signals.

Is the CY7C1470BV25-167BZXI compatible with 3.3 V I/O interfaces?

No. The device requires strict 2.5 V ±0.2 V for both VDD (core) and VDDQ (I/O). Connecting to 3.3 V interfaces will exceed absolute maximum ratings and may cause permanent damage. Level-shifting circuitry or compatible 2.5 V logic families (e.g., LVT, SSTL_2) must be used for interface interoperability.