Cypress Semiconductor Corp CY7C1470BV25-200AXI
- Part No.:
- CY7C1470BV25-200AXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1470BV25-200AXI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,555
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1470BV25-200AXI from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory interfaces in network packet buffers and telecom line cards. It operates at 200 MHz with zero wait states, supports 2.5 V core and I/O supply, delivers 3.0 ns clock-to-output delay, and features fully registered inputs/outputs with byte-write capability.
For engineers reviewing the CY7C1470BV25-200AXI datasheet, CY7C1470BV25-200AXI pinout, CY7C1470BV25-200AXI application, or CY7C1470BV25-200AXI equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous self-timed write timing, JTAG boundary-scan support, and TQFP/FBGA package compatibility for PCB layout and thermal management.
Technical Context
The device implements a fully synchronous, rising-edge-triggered pipeline with three chip enables (CE1 active-low, CE2 active-high, CE3 active-low), Clock Enable (CEN) for cycle extension, and ADV/LD for burst address control. All address, data, and control signals pass through input registers synchronized to CLK.
Output drivers are synchronously tri-stated during write data phases, eliminating bus contention. Internal self-timed write logic removes external write pulse timing constraints, while MODE pin selects linear or interleaved burst order-critical for cache coherency and DMA engine alignment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 or 4M × 18 configuration) |
| Max Clock Frequency | 200 MHz - enables sustained 200 MT/s throughput without wait states |
| Access Time (tCO) | 3.0 ns - deterministic clock-to-output delay for timing-critical read paths |
| Supply Voltage | 2.5 V core (VDD) and 2.5 V I/O (VDDQ) - compatible with legacy 2.5 V system rails |
| Burst Capability | Linear or interleaved - selectable via MODE pin for alignment with processor or ASIC burst engines |
| Power Consumption | 450 mA max operating current - defines thermal envelope for dense memory subsystems |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing of memory interconnects on production PCBs |
Pinout & Package
Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (15 × 17 × 1.4 mm). Pin functions validated per Cypress Document 001-15032 Rev. *O.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Synchronous clock input | Rising-edge-triggered master timing reference; qualified by CEN |
| CEN | Clock enable | Active-low; suspends clock recognition without deselecting device, extending previous cycle |
| ADV/LD | Address advance/load control | High = increment internal burst counter; Low = load new address from A[18:0] |
| BWa–BWd | Byte write select (active-low) | Independent control of four 9-bit data groups (DQa/DQPa through DQd/DQPd) |
| MODE | Burst order configuration | Strap pin: HIGH = interleaved burst; LOW = linear burst; must remain static during operation |
| ZZ | Deep sleep mode enable | Asynchronous entry into low-power state (<120 µA standby current) |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables true back-to-back read/write operations with no wait states, maximizing bandwidth utilization |
| Fully registered I/O path | All inputs latched and outputs registered on CLK rising edge - simplifies timing closure in FPGA/ASIC interfaces |
| Synchronous self-timed writes | Eliminates external write pulse width constraints; internal logic guarantees reliable write completion |
| Byte-selectable write masking | Four independent BW pins allow partial-word updates without read-modify-write cycles |
| Configurable burst order | MODE pin selects linear or interleaved addressing - matches CPU, DSP, or network processor burst patterns |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches. IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly with MAC or switch fabric ASICs. Use Value: 200 MHz zero-wait-state operation sustains full line-rate packet buffering without stalling ingress/egress pipelines. |
Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line interface units. IC Role / Device Role / Timing Role: Synchronous burst memory supporting deterministic latency for jitter-sensitive TDM and ATM cell handling. Use Value: 3.0 ns tCO and fully registered I/O ensure setup/hold compliance with high-speed SerDes PHY timing budgets. |
| Baseband Processing Cache | Radar Signal Processing Buffer |
|
Use Scenario: Temporary storage for channel estimation and equalization coefficients in LTE/5G baseband processors. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by multi-core DSP clusters via shared bus or crossbar. Use Value: Byte-write capability enables efficient coefficient updates without corrupting adjacent data in 36-bit wide memory words. |
Use Scenario: Real-time buffering of ADC samples and FFT intermediate results in phased-array radar front ends. IC Role / Device Role / Timing Role: Pipelined memory supporting continuous burst reads/writes synchronized to radar pulse repetition interval. Use Value: Interleaved burst mode aligns with FFT butterfly access patterns, reducing memory controller overhead by 40% vs. linear addressing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 3.3 V core/I/O; 10 ns tCO at 100 MHz; supports ZBT™ but not NoBL™ architecture | Lacks zero-wait-state back-to-back capability; requires external OE timing control | Choose when migrating legacy 3.3 V ZBT designs where power efficiency and burst depth are secondary to pin compatibility |
| ISSI IS61WV102436BLL-150TQLI | 2.5 V core/I/O; 150 MHz max; 3.5 ns tCO; no JTAG or ZZ sleep mode | Missing IEEE 1149.1 boundary scan and deep-sleep functionality | Choose for cost-sensitive industrial control applications where testability and ultra-low standby current are not required |
Compared with IDT72T36120L10BG and IS61WV102436BLL-150TQLI, CY7C1470BV25-200AXI uniquely delivers 200 MHz zero-wait-state operation with integrated JTAG testability and configurable burst order-enabling higher throughput and lower system-level validation effort in telecom and defense systems.
Availability
CY7C1470BV25-200AXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and radar signal processing requiring stable component supply across extended product lifecycles.
Supply support for CY7C1470BV25-200AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.
CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for applications demanding deterministic, wait-state-free memory access in high-speed packet processing and real-time signal chains.
FAQ
What is the function of the MODE pin on CY7C1470BV25-200AXI?
The MODE pin is a strap input that selects burst address order: pulled HIGH for interleaved burst (default when floating), or pulled LOW for linear burst. It must remain static during device operation and is sampled only at power-up or reset. This setting determines how the internal address counter increments during burst accesses and directly affects compatibility with host processor burst engines.
Does CY7C1470BV25-200AXI support asynchronous output enable (OE)?
Yes, OE is an asynchronous active-low input that controls I/O direction. When asserted LOW, outputs are enabled; when HIGH, outputs enter high-impedance state. However, OE is masked during write data phases, first clock after deselection, and full device deselection-ensuring automatic tri-state behavior without external timing control.
How does the Clock Enable (CEN) pin affect timing behavior?
CEN is a synchronous active-low input that qualifies CLK. When CEN is HIGH, CLK is ignored and all internal states hold; when LOW, CLK is recognized and operations proceed. Unlike chip disable, CEN assertion extends the previous clock cycle without disrupting pipeline state-enabling precise cycle stretching for glueless interface with slower controllers.
Can CY7C1470BV25-200AXI be used in place of ZBT™ SRAMs?
Yes, it is pin-compatible and functionally equivalent to ZBT™ devices, supporting identical control protocols and timing models. However, CY7C1470BV25-200AXI adds NoBL™ advantages: zero-wait-state back-to-back operations, internal self-timed writes, and MODE-configurable burst order-providing measurable throughput gains in burst-intensive applications.
CY7C1470BV25-200AXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1470BV25-200AXI FAQ
1.How can I place an order for CY7C1470BV25-200AXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470BV25-200AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1470BV25-200AXI reliable?
The price and inventory of CY7C1470BV25-200AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV25-200AXI is usually 5 days.
3.What payment methods are accepted for CY7C1470BV25-200AXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV25-200AXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1470BV25-200AXI?
CY7C1470BV25-200AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1470BV25-200AXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1470BV25-200AXI?
For technical support, including CY7C1470BV25-200AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV25-200AXI requirements.
6.How does Aetrix verify that CY7C1470BV25-200AXI is sourced from the original manufacturer or authorized distributors?
All CY7C1470BV25-200AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV25-200AXI meets industry standards.
7.What is the process for return or replacement of CY7C1470BV25-200AXI?
All CY7C1470BV25-200AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV25-200AXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470BV25-200AXI part is unused and in its original packaging.
Return procedure for CY7C1470BV25-200AXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1470BV25-200AXI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…
Electronic devices and circuits guide covering passive components, semiconductors, analog and digital circuits, circuit theory, practical calculations, troubleshooting, datasheet selection, and learnin…

