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Cypress Semiconductor Corp CY7C1470BV25-200BZI

Part No.:
CY7C1470BV25-200BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1470BV25-200BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:154

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Product details

Overview

CY7C1470BV25-200BZI from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 200 MHz with zero wait states, supports 2.5V core and I/O supply, delivers 3.0 ns clock-to-output delay, and enables true back-to-back read/write transitions in burst or single-access mode.

For engineers reviewing the CY7C1470BV25-200BZI datasheet, CY7C1470BV25-200BZI pinout, CY7C1470BV25-200BZI application, or CY7C1470BV25-200BZI equivalent, this device serves as a pin-compatible ZBT™-equivalent SRAM optimized for low-latency, high-bandwidth packet buffering, cache coherency tracking, and FPGA/ASIC interface acceleration where deterministic timing and byte-selectable writes are critical.

Technical Context

The CY7C1470BV25-200BZI implements fully registered synchronous interfaces: all address, control, and data inputs pass through rising-edge-triggered input registers, while outputs are latched by output registers synchronized to CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write operations without inter-cycle gaps.

It uses three synchronous chip enables (CE1 active-low, CE2 active-high, CE3 active-low), asynchronous OE for output tri-state control, and CEN to gate clock recognition-allowing cycle extension without deselection. Burst order (linear or interleaved) is set by the MODE strap pin, and self-timed write circuitry ensures consistent write completion independent of external timing margins.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization), enabling 9 MB of fast on-chip buffer space for multi-gigabit packet queues.
Max Clock Frequency 200 MHz - supports 200 MT/s sustained throughput with no wait states in pipelined operation.
Access Time (tCO) 3.0 ns - guarantees data valid at DQ outputs within 3.0 ns after CLK rise, critical for tight setup/hold timing in FPGA interfaces.
Supply Voltages VDD = 2.5 V ±0.2 V, VDDQ = 2.5 V ±0.2 V - dual 2.5V rails simplify power delivery and ensure compatibility with 2.5V I/O standards.
Byte Write Capability Four independent BWa–BWd signals - allows selective 9-bit writes to DQa/DQPa through DQd/DQPd, reducing bus traffic and power during partial-word updates.
Power Consumption Max operating current = 450 mA at 200 MHz - enables thermal-aware system design in dense line-card layouts.
Sleep Mode ZZ pin support - reduces standby current to ≤120 mA, extending low-power idle periods in burst-inactive intervals.

Pinout & Package

Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), Pb-free, RoHS-compliant, JEDEC-standard footprint.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Synchronous Address Input Latched on rising CLK edge; selects one of 2M addresses (19-bit address bus).
BWa–BWd Synchronous Byte Write Select Active-low per-byte controls for DQa/DQPa through DQd/DQPd; qualified by WE and CLK.
CLK Primary Clock Input Rising-edge-triggered master clock; gated by CEN to suspend internal timing without losing state.
CEN Clock Enable Active-low signal that masks CLK - extends previous cycle duration deterministically for timing margin recovery.
CE1, CE2, CE3 Chip Enable Group Three-signal decode (CE1/L, CE2/H, CE3/L) enables bank selection and depth expansion with minimal glue logic.
DQa–DQd, DQPa–DQPd Bidirectional Data I/O 36-bit data + 4-bit parity interface; direction controlled by OE and internal read/write state machine.
OE Asynchronous Output Enable Active-low tri-state control; masked during write data phase to prevent bus contention.
ADV/LD Burst Address Control High = advance internal counter; Low = load new address - enables burst and random access modes.
MODE Burst Order Strap Static pin defining linear vs. interleaved burst sequence; must remain stable during operation.
ZZ Deep Sleep Control Active-low entry into low-current sleep mode; retains data but disables clocks and I/O drivers.

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables unlimited back-to-back reads/writes with zero wait states - eliminates pipeline bubbles in high-frequency memory controllers.
Fully Registered I/O All inputs and outputs synchronized to CLK rising edge - simplifies timing closure in FPGA/ASIC designs with predictable setup/hold windows.
Synchronous Self-Timed Writes On-chip write timing logic removes dependency on external write pulse width - improves reliability across voltage/temperature corners.
IEEE 1149.1 JTAG Support Integrated boundary scan (TCK/TMS/TDI/TDO) enables in-system testability and board-level diagnostics without additional test fixtures.
Flexible Burst Modes Configurable linear or interleaved burst via MODE pin - matches legacy ZBT or modern DDR-style addressing requirements.

Applications

Packet Buffering in Switch ASICs Cache Coherency Directory Storage

Use Scenario: High-speed Ethernet switch fabric buffers incoming/outgoing packets before classification and forwarding.

IC Role / Device Role / Timing Role: Primary 2M×36 SRAM serving as deep, low-latency first-level packet memory with deterministic 3.0 ns tCO.

Use Value: Enables full-line-rate 10G/40G packet processing by sustaining 200 MT/s back-to-back reads/writes without arbitration stalls.

Use Scenario: Multi-core processor cluster maintains shared cache coherency metadata across L3 caches.

IC Role / Device Role / Timing Role: Serves as directory RAM storing tag/state bits for up to 2M cache lines, accessed synchronously by coherence controller.

Use Value: Supports concurrent directory lookups and updates with byte-write granularity, minimizing bus occupancy during cache state transitions.

FPGA-Based Protocol Accelerators Telecom Line Card Frame Buffers

Use Scenario: FPGA implements TCP offload engine requiring fast, wide memory for reassembly buffers and connection state tables.

IC Role / Device Role / Timing Role: Off-chip SRAM interfaced directly to FPGA I/O banks, configured for 200 MHz burst reads with ADV/LD-controlled address stepping.

Use Value: Eliminates need for external FIFOs or complex handshaking - simplifies RTL integration and reduces logic resource usage.

Use Scenario: SONET/SDH line card stores entire OC-192 frames (up to 155 Mbps) for jitter correction and pointer alignment.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM used in ping-pong configuration for seamless frame buffering with zero-drop latency.

Use Value: Achieves sub-10 ns access consistency required for bit-accurate frame alignment, meeting ITU-T G.8261 jitter tolerance specs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1470BV25-250BZI Higher speed grade: 250 MHz max clock, 3.0 ns tCO (same access time, higher frequency margin). Required where system clock exceeds 200 MHz or timing margin is constrained by PVT variation. Select when designing for 250 MHz operation or needing headroom for future frequency scaling.
IDT72V2115L10PF 36-bit, 2M × 36 QDR-II+ SRAM; differential CLK, separate read/write ports, 250 MHz DDR interface. Supports simultaneous read/write (true dual-port behavior), suited for asymmetric traffic patterns. Choose when application requires concurrent access or higher aggregate bandwidth than single-port pipelined SRAM provides.

Compared with CY7C1470BV25-250BZI, this 200 MHz variant trades peak frequency for lower power and relaxed timing closure; versus IDT72V2115L10PF, it offers simpler single-clock control and ZBT™ compatibility at the cost of no true dual-port capability.

Availability

CY7C1470BV25-200BZI is available at Aetrix Electronics and suitable for packet buffering, cache coherency tracking, FPGA protocol acceleration, and telecom frame storage requiring stable component supply across extended production lifecycles.

Supply support for CY7C1470BV25-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT™ SRAMs in systems demanding zero-wait-state, high-frequency, burst-capable memory with simplified timing and robust signal integrity.

FAQ

What is the function of the MODE pin on CY7C1470BV25-200BZI?

The MODE pin is a static configuration input that selects burst order: tied HIGH for interleaved burst (e.g., 0,2,4,6), pulled LOW for linear burst (e.g., 0,1,2,3). It must be held stable during operation and defaults to HIGH if left floating. This setting determines how the internal burst counter increments during sequential accesses initiated by ADV/LD.

How does the ZZ (Sleep) pin reduce power consumption?

Asserting ZZ LOW places the device into deep sleep mode, disabling internal clocks, output drivers, and most logic blocks while retaining memory contents. This reduces standby current to ≤120 mA - critical for power-sensitive telecom modules where memory remains idle between traffic bursts but must retain state.

Can CY7C1470BV25-200BZI operate with only two chip enables?

No. The device requires all three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) to be asserted simultaneously at the rising CLK edge to initiate any access. CE2's active-high polarity and the three-signal decode scheme are fixed per datasheet and cannot be bypassed or reduced to two signals without violating functional operation.

Is the CY7C1470BV25-200BZI compatible with 3.3V I/O interfaces?

No. It requires strict 2.5V ±0.2V for both VDD (core) and VDDQ (I/O), and is not 3.3V-tolerant. Connecting to 3.3V logic without level translation risks damage or undefined behavior. Interface with 3.3V FPGAs or processors requires dedicated 2.5V-compatible I/O banks or external level shifters.

CY7C1470BV25-200BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
NoBL™
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1470BV25-200BZI FAQ

1.How can I place an order for CY7C1470BV25-200BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1470BV25-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1470BV25-200BZI reliable?

The price and inventory of CY7C1470BV25-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV25-200BZI is usually 5 days.

3.What payment methods are accepted for CY7C1470BV25-200BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV25-200BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1470BV25-200BZI?

CY7C1470BV25-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1470BV25-200BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1470BV25-200BZI?

For technical support, including CY7C1470BV25-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV25-200BZI requirements.

6.How does Aetrix verify that CY7C1470BV25-200BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1470BV25-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV25-200BZI meets industry standards.

7.What is the process for return or replacement of CY7C1470BV25-200BZI?

All CY7C1470BV25-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV25-200BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1470BV25-200BZI part is unused and in its original packaging.

Return procedure for CY7C1470BV25-200BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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