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Cypress Semiconductor Corp CY7C1470BV25-200BZXC

Part No.:
CY7C1470BV25-200BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1470BV25-200BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
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Payment:
Payment
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Inventory:363

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Product details

Overview

CY7C1470BV25-200BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 200 MHz with zero wait states, supports 2.5 V core and I/O supply, features fully registered inputs/outputs, and delivers 3.0 ns clock-to-output delay. Used in packet buffering and cache coherency circuits where back-to-back read/write transitions are critical.

For engineers reviewing the CY7C1470BV25-200BZXC datasheet, CY7C1470BV25-200BZXC pinout, CY7C1470BV25-200BZXC application, or CY7C1470BV25-200BZXC equivalent, this page provides verified package mapping (100-pin TQFP), byte-write control logic, burst order selection via MODE pin, JTAG boundary-scan support, and validated alternatives for ZBT-compatible designs.

Technical Context

The device implements a synchronous, fully registered pipeline with rising-edge-triggered input and output registers. All address, control, and data signals-including BWa–BWd, CE1/CE2/CE3, ADV/LD, and WE-are sampled on the rising edge of CLK, which is gated by CEN.

NoBL™ logic enables true back-to-back read/write operations without bus latency; internal self-timed write circuitry eliminates external OE timing constraints, and burst addressing supports both linear and interleaved orders selected by the MODE strap pin.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 200 MHz - enables sustained 200 MT/s throughput with no wait states
Access Time (tCO) 3.0 ns - deterministic clock-to-output delay for timing-critical pipelines
Supply Voltage 2.5 V VDD and VDDQ - single-supply operation simplifies power delivery
Burst Capability Linear or interleaved - selectable via MODE pin; supports standard cache-line fetch patterns
Byte Write Control BWa–BWd active-low signals - enable independent 9-bit writes to DQa/DQPa through DQd/DQPd
JTAG Support IEEE 1149.1 compliant - enables board-level test and debug without additional test logic

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, JEDEC-standard Pb-free.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Synchronous Address Input Sampled on rising CLK edge; selects one of 2M addresses in 2M × 36 mode
BWa–BWd Byte Write Select Active-low controls 9-bit write segments: BWa→DQa/DQPa, BWd→DQd/DQPd
CE1, CE3 Synchronous Chip Enable (LOW) Combined with CE2 (HIGH) for 3-signal depth expansion and bank isolation
ADV/LD Address Counter Control HIGH advances internal burst counter; LOW loads new address after deselect
MODE Burst Order Strap Static input: HIGH = interleaved, LOW = linear; must be stable during operation
DQa–DQd, DQPa–DQPd Bidirectional Data I/O 72-bit data + parity interface; automatically tri-stated during write data phase
CLK, CEN Clock & Enable CEN masks CLK without deselecting device-enables cycle extension for timing margin

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables unlimited consecutive read/write operations with zero wait states-critical for packet buffer FIFOs
Fully Registered Interface All inputs and outputs synchronized to CLK rising edge-simplifies timing closure in high-speed PCB layouts
On-chip Self-timed Writes Eliminates need for external OE timing control and removes asynchronous timing hazards
Configurable Burst Order MODE pin selects linear or interleaved addressing-matches CPU or ASIC burst expectations
IEEE 1149.1 JTAG Support Provides boundary-scan testability without adding test pads or redesigning layout

Applications

Telecom Line Card Buffering Network Processor Cache

Use Scenario: High-speed packet buffering in 10G/40G Ethernet line cards requiring deterministic latency and burst-depth alignment.

IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as ingress/egress FIFO between SERDES and switch fabric controller.

Use Value: 200 MHz zero-wait-state operation sustains full line-rate throughput; NoBL™ ensures no pipeline stalls during mixed read/write traffic.

Use Scenario: L2 cache extension for multi-core network processors handling deep packet inspection and flow classification.

IC Role / Device Role / Timing Role: Synchronous pipelined memory providing low-latency, wide-data access to instruction and metadata tables.

Use Value: 72-bit width and byte-write capability allow efficient 32-bit/64-bit aligned updates without read-modify-write cycles.

Baseband Processing Memory Radar Signal Processing Buffer

Use Scenario: Real-time baseband processing in 5G massive MIMO radio units requiring burst-aligned memory access for FFT and channel estimation.

IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with FPGA-based DSP engines using linear burst addressing.

Use Value: MODE pin configures linear burst order matching FPGA DMA engine expectations; 3.0 ns tCO meets tight setup/hold margins.

Use Scenario: Pulse-Doppler radar systems needing high-reliability, low-jitter memory for ADC sample buffering and CFAR processing.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM acting as time-domain sample store before FFT computation.

Use Value: Fully registered interface and JTAG testability ensure signal integrity and field-test readiness in safety-critical avionics environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2125L15PF 2.5 V, 72-Mbit, 200 MHz, but uses QDR-II+ interface with separate read/write clocks Requires dual-clock domain design and lacks MODE-selectable burst order Prefer when system already uses QDR-II+ PHY and needs higher peak bandwidth over sustained burst efficiency
ISSI IS61WV102436B 2.5 V, 36-Mbit (1M × 36), 167 MHz max; no JTAG, no ZZ sleep mode, no interleaved burst Limited density and frequency; suitable only for cost-sensitive, lower-bandwidth control-plane buffers Choose only if BOM cost is primary constraint and 72-Mbit capacity or 200 MHz timing is not required

Compared with IDT72V2125L15PF and IS61WV102436B, CY7C1470BV25-200BZXC uniquely combines 72-Mbit density, 200 MHz zero-wait-state operation, MODE-configurable burst order, and IEEE 1149.1 testability-making it optimal for next-generation telecom and defense signal processing where timing determinism and test coverage are non-negotiable.

Availability

CY7C1470BV25-200BZXC is available at Aetrix Electronics and suitable for telecom line card buffering, network processor cache extension, and radar signal processing applications requiring stable component supply across extended production lifecycles.

Supply support for CY7C1470BV25-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable systems-on-chip for industrial, automotive, and communications markets.

CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for eliminating bus latency in high-speed packet-forwarding and real-time signal-processing systems where deterministic timing and burst efficiency are essential.

FAQ

What is the function of the MODE pin on CY7C1470BV25-200BZXC?

The MODE pin is a static strap input that selects burst addressing order: pulled HIGH (or left floating) enables interleaved burst mode; pulled LOW enables linear burst mode. It must remain stable during device operation and is sampled only at power-up or reset. This allows hardware-level configuration to match the burst expectations of the host ASIC or FPGA without firmware intervention.

Does CY7C1470BV25-200BZXC support partial writes without read-modify-write cycles?

Yes. The device supports true byte-write operations via four independent active-low Byte Write Select signals (BWa–BWd), each controlling a 9-bit segment (DQa/DQPa through DQd/DQPd). When a specific BWx is asserted LOW while WE is active, only the corresponding 9-bit data group is written-no internal read-modify-write is performed, preserving timing determinism and reducing power.

How does the CEN pin affect timing behavior compared to deasserting CE1/CE2/CE3?

CEN gates the CLK signal without deselecting the device: when CEN is HIGH, the internal state holds and the previous clock cycle extends, preserving address and data validity. In contrast, deasserting CE1/CE2/CE3 places the device in a deselected state, requiring ADV/LD to be driven LOW before loading a new address. CEN is used for precise cycle stretching; CE signals manage bank activation.

Is JTAG boundary scan functional on CY7C1470BV25-200BZXC, and what pins are required?

Yes, the device implements full IEEE 1149.1 JTAG boundary scan. Required pins are TCK (Test Clock), TMS (Test Mode Select), TDI (Test Data In), and TDO (Test Data Out)-all located on dedicated balls/pins per the 100-pin TQFP and 165-ball FBGA packages. JTAG remains active regardless of CEN or chip-enable state, enabling in-system test even during standby.

CY7C1470BV25-200BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
NoBL™
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1470BV25-200BZXC FAQ

1.How can I place an order for CY7C1470BV25-200BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1470BV25-200BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1470BV25-200BZXC reliable?

The price and inventory of CY7C1470BV25-200BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV25-200BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1470BV25-200BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV25-200BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1470BV25-200BZXC?

CY7C1470BV25-200BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1470BV25-200BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1470BV25-200BZXC?

For technical support, including CY7C1470BV25-200BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV25-200BZXC requirements.

6.How does Aetrix verify that CY7C1470BV25-200BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1470BV25-200BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV25-200BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1470BV25-200BZXC?

All CY7C1470BV25-200BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV25-200BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1470BV25-200BZXC part is unused and in its original packaging.

Return procedure for CY7C1470BV25-200BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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