Cypress Semiconductor Corp CY7C1470BV33-167BZC
- Part No.:
- CY7C1470BV33-167BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1470BV33-167BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:268
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Product details
Overview
CY7C1470BV33 from Cypress Semiconductor is a 72-Mbit (2M × 36) pipelined synchronous SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It supports 167 MHz bus operation with zero wait states, features fully registered inputs/outputs, 3.3 V core supply with 3.3 V/2.5 V I/O support, and clock-to-output time of 3.4 ns.
For engineers reviewing the CY7C1470BV33 datasheet, CY7C1470BV33 pinout, CY7C1470BV33 application, or CY7C1470BV33 equivalent, key selection criteria include burst mode compatibility (linear/interleaved), byte-write granularity (BWa–BWd), synchronous self-timed write control, and JEDEC-standard 100-pin TQFP packaging for board-level signal integrity and thermal management.
Technical Context
The CY7C1470BV33 implements a fully synchronous, pipelined memory interface where all address, control, and data signals are registered on the rising edge of CLK, enabling true back-to-back read/write operations without bus latency. Its NoBL™ logic eliminates asynchronous output enable timing constraints by internally self-timing output buffer control.
Burst addressing is managed via ADV/LD and MODE pins to select linear or interleaved order, while four independent byte-write enables (BWa–BWd) allow granular 9-bit writes to DQa–DQd and associated parity bits DQPa–DQPd. The device supports IEEE 1149.1 JTAG boundary scan for system-level testability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization), enabling single-chip replacement for legacy ZBT SRAMs in 36-bit data-path systems. |
| Max Clock Frequency | 167 MHz - guarantees sustained 167 MT/s throughput with no wait states in pipelined burst mode. |
| Access Time | 3.4 ns - defines maximum clock-to-output delay for read cycles at 167 MHz, critical for setup timing closure. |
| Supply Voltage | 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - supports mixed-voltage system interfacing without level shifters. |
| Power Consumption | 450 mA max operating current - determines thermal design margin and PCB power delivery requirements. |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-compliant Pb-free - ensures mechanical compatibility with standard SMT assembly lines. |
| Byte Write Control | Four active-low BWa–BWd signals - enables independent 9-bit write masking per data nibble, reducing bus contention during partial updates. |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, surface-mount compatible with IPC-7351B footprint.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Synchronous Address Input | 18-bit address bus sampled on rising CLK edge; selects one of 2M locations in 2M × 36 configuration. |
| BWa–BWd | Synchronous Byte Write Select | Active-low controls write enable for DQa/DQPa, DQb/DQPb, DQc/DQPc, DQd/DQPd groups - enables 9-bit sub-word writes. |
| CLK | Master Clock Input | Rising-edge-triggered timing reference for all synchronous registers; qualified by CEN to suspend operation without deselection. |
| CEN | Clock Enable | Active-low gate for CLK; deassertion extends previous cycle, preserving pipelined timing integrity during idle periods. |
| CE1, CE2, CE3 | Chip Enable Inputs | Three-level synchronous chip select (CE1/CE3 active-low, CE2 active-high) for multi-bank memory mapping and bank isolation. |
| OE | Asynchronous Output Enable | Active-low tri-states DQ outputs; masked during write data phase to prevent bus contention - eliminates need for external bus arbitration logic. |
| DQa–DQd, DQPa–DQPd | Bidirectional Data I/O | 36-bit data + 4-bit parity interface; direction controlled by OE and internal read/write state machine. |
| ADV/LD | Burst Address Control | High = advance internal counter for burst access; Low = load new address - enables seamless transition between burst and random access modes. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) Architecture | Enables unlimited consecutive read/write operations with zero wait states - eliminates pipeline stalls in high-speed packet buffering applications. |
| Fully Registered Interface | All inputs and outputs synchronized to CLK rising edge - simplifies timing analysis and improves signal integrity in dense PCB layouts. |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse width constraints - reduces FPGA/CPLD logic overhead for memory controller design. |
| IEEE 1149.1 JTAG Boundary Scan | Supports production test and in-system debug without additional test points - lowers manufacturing test cost and improves yield traceability. |
| ZZ Sleep Mode Option | Reduces standby current to ≤120 mA while retaining data - extends hold time in power-constrained telecom modules during link idle periods. |
Applications
| Telecom Line Card Buffering | Network Packet Processor Cache |
|---|---|
|
Use Scenario: Storing incoming/outgoing ATM or Ethernet frames in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer with deterministic 167 MT/s read/write throughput and burst-addressed sequential access. Use Value: Eliminates bus turnaround delays via NoBL™ architecture, enabling full-duplex line-rate processing without external FIFOs. |
Use Scenario: Acting as instruction/data cache for multi-core network processors handling IPv4/IPv6 forwarding lookups. IC Role / Device Role / Timing Role: Pipelined SRAM providing zero-wait-state access to microcode and packet header metadata during deep-pipeline execution. Use Value: Fully registered interface ensures timing closure at 167 MHz, reducing timing margin allocation in ASIC/FPGA memory controller RTL. |
| Base Station Radio Unit Memory | Industrial Real-Time Controller Buffer |
|
Use Scenario: Temporary storage of IQ samples between digital downconverters and channelizers in LTE/5G remote radio heads. IC Role / Device Role / Timing Role: Burst-mode SRAM supporting interleaved addressing for FFT input/output reordering with 3.4 ns clock-to-output latency. Use Value: Byte-write capability (BWa–BWd) allows selective update of complex sample buffers without full-word overwrites - conserves bandwidth and power. |
Use Scenario: Holding motion control trajectory data and sensor fusion results in servo drive modules requiring deterministic response. IC Role / Device Role / Timing Role: Deterministic-access memory subsystem with ZZ sleep mode for energy-efficient idle-state retention during motor dwell periods. Use Value: 3.3 V/2.5 V I/O flexibility permits direct interface to both legacy 3.3 V FPGAs and modern 2.5 V microcontrollers - simplifies BOM consolidation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT 72T36160L167BFGI | Same 2M × 36 organization and 167 MHz speed grade, but uses differential LVDS clocks and lacks ZZ sleep mode. | Requires LVDS clock source and termination; not suitable for single-ended clock domains or low-power sleep scenarios. | Select when interfacing with LVDS-capable FPGAs and thermal/power budgets permit higher standby current. |
| ISSI IS61WV204836BLL-167TQLI | 167 MHz speed grade, 2M × 36 organization, but only supports 3.3 V I/O (no 2.5 V VDDQ option) and lacks JTAG boundary scan. | Cannot interface directly with 2.5 V logic; requires external test infrastructure for production board validation. | Select for cost-sensitive industrial applications where 2.5 V I/O compatibility and JTAG are non-critical. |
Compared with IDT 72T36160L167BFGI and ISSI IS61WV204836BLL-167TQLI, the CY7C1470BV33 uniquely combines 3.3 V/2.5 V I/O flexibility, integrated JTAG, and ZZ sleep mode - making it optimal for mixed-voltage telecom and power-aware embedded systems where testability and standby efficiency are design priorities.
Availability
CY7C1470BV33 is available at Aetrix Electronics and suitable for telecom line card buffering, network packet processor caching, base station radio unit memory, and industrial real-time controller buffer applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1470BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets.
The CY7C1470BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput buffering in packet-switched and real-time signal processing systems.
FAQ
What is the function of the ADV/LD pin in burst mode operation?
The ADV/LD pin controls the internal address counter behavior: when HIGH and CEN is active, it advances the counter for sequential burst access; when LOW, it loads a new starting address from A0–A17. This dual-mode operation enables seamless switching between linear bursts and random-access reloads without external address generation logic.
Does CY7C1470BV33 support both linear and interleaved burst orders?
Yes - burst order is selected via the MODE pin: MODE = LOW configures linear burst (incrementing addresses), MODE = HIGH selects interleaved burst (bit-reversed addressing). This matches industry-standard ZBT SRAM behavior and ensures compatibility with existing memory controllers designed for burst-oriented traffic patterns.
How does the synchronous self-timed write feature simplify memory controller design?
The device internally generates precise write pulse timing based on CLK and CEN, eliminating the need for the controller to meet strict external write-enable pulse width or setup/hold requirements. This reduces FPGA logic utilization and removes timing-critical paths in the write control path - accelerating RTL development and verification.
Can CY7C1470BV33 operate with a 2.5 V I/O supply while maintaining 3.3 V core voltage?
Yes - VDDQ (I/O supply) accepts 2.5 V ±0.2 V while VDD (core supply) remains at 3.3 V ±0.3 V. This dual-supply capability allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, preserving signal integrity and reducing BOM count in mixed-voltage system designs.
CY7C1470BV33-167BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1470BV33-167BZC FAQ
1.How can I place an order for CY7C1470BV33-167BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470BV33-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1470BV33-167BZC reliable?
The price and inventory of CY7C1470BV33-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV33-167BZC is usually 5 days.
3.What payment methods are accepted for CY7C1470BV33-167BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV33-167BZC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1470BV33-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1470BV33-167BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1470BV33-167BZC?
For technical support, including CY7C1470BV33-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV33-167BZC requirements.
6.How does Aetrix verify that CY7C1470BV33-167BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1470BV33-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV33-167BZC meets industry standards.
7.What is the process for return or replacement of CY7C1470BV33-167BZC?
All CY7C1470BV33-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV33-167BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470BV33-167BZC part is unused and in its original packaging.
Return procedure for CY7C1470BV33-167BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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