Cypress Semiconductor Corp CY7C1470BV33-167BZXC

Overview

CY7C1470BV33-167BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.4 ns clock-to-output access time. Its fully registered inputs/outputs enable true back-to-back read/write operations in burst or single-cycle modes.

For engineers reviewing the CY7C1470BV33-167BZXC datasheet, CY7C1470BV33-167BZXC pinout, CY7C1470BV33-167BZXC application, or CY7C1470BV33-167BZXC equivalent, key selection criteria include its 100-pin TQFP package, byte-write capability across four 9-bit data groups (DQa–DQd + DQPa–DQPd), synchronous self-timed write control, and JTAG-compliant boundary scan support for system-level testability.

Technical Context

The device implements a pipelined No Bus Latency™ architecture with fully synchronous input and output registers clocked on the rising edge of CLK, enabling consecutive read/write transfers without bus turnaround delay. All address, control, and byte-write signals are sampled synchronously, while OE remains asynchronous for output tri-state control during write sequences.

It integrates burst logic supporting linear or interleaved addressing, internal self-timed write circuitry eliminating external write timing constraints, and three chip enables (CE1 low, CE2 high, CE3 low) for flexible bank selection. The ZZ Sleep Mode and Stop Clock option provide power management in idle states without losing data integrity.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC-standard Pb-free, 0.5 mm pitch, body size 14 mm × 20 mm × 1.4 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV204836BLL-167TQLI, CY7C1470BV33-167BZXC uniquely combines 100-pin TQFP packaging, integrated JTAG, ZZ sleep mode, and full NoBL™ burst control-making it optimal for space-constrained, testable, and power-aware telecom and industrial designs.

Availability

CY7C1470BV33-167BZXC is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, and industrial real-time controllers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1470BV33-167BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.

CY7C1470BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfaces in telecom infrastructure, enterprise networking, and real-time embedded systems.

FAQ

What is the function of the ADV/LD pin in CY7C1470BV33-167BZXC?

The ADV/LD pin controls burst address sequencing: when HIGH (with CEN active), it advances the internal address counter for consecutive burst accesses; when LOW, it loads a new base address from A[17:0]. This dual-mode operation enables both sequential packet buffering and random-access configuration register updates without external address generation logic.

Does CY7C1470BV33-167BZXC support 2.5 V I/O signaling?

Yes - the device supports 2.5 V I/O operation via the VDDQ supply pin, while maintaining 3.3 V core voltage (VDD). This allows direct interfacing with 2.5 V FPGAs and ASICs without level shifters, provided VDDQ is set to 2.5 V ± 0.1 V and all I/O timing parameters are validated per the 2.5 V AC specifications in the datasheet.

How does the ZZ Sleep Mode affect data retention and wake-up time?

In ZZ Sleep Mode, the device enters ultra-low-power state with current draw ≤120 mA while retaining full memory contents. Wake-up is asynchronous and completes within one CLK cycle after ZZ is deasserted, with no initialization delay - critical for real-time systems requiring rapid resumption of packet processing.

Can CY7C1470BV33-167BZXC be used in place of ZBT™-compatible SRAMs?

Yes - it is pin-compatible and functionally equivalent to ZBT™ SRAMs (e.g., IDT72V2115), supporting identical control protocols, burst orders, and timing models. No hardware or firmware changes are needed beyond verifying VDDQ compatibility and confirming ADV/LD usage matches existing ZBT™ implementation.