Cypress Semiconductor Corp CY7C1470BV33-167BZXI
- Part No.:
- CY7C1470BV33-167BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1470BV33-167BZXI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:565
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Product details
Overview
CY7C1470BV33-167BZXI from Cypress Semiconductor is a 72-Mbit (2M × 36) pipelined synchronous SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 167 MHz with zero wait states, supports 3.3 V core/2.5 V I/O, delivers 3.4 ns clock-to-output time, and features fully registered inputs/outputs with byte-write capability.
For engineers reviewing the CY7C1470BV33-167BZXI datasheet, CY7C1470BV33-167BZXI pinout, CY7C1470BV33-167BZXI application, or CY7C1470BV33-167BZXI equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed writes, JTAG boundary scan compliance, and compatibility with ZBT™-based system designs requiring deterministic latency.
Technical Context
The device implements a fully synchronous, rising-edge-triggered pipeline architecture with three independent chip enables (CE1 low, CE2 high, CE3 low) and clock enable (CEN) for cycle suspension without deselection. All address, control, and data signals are registered on CLK's rising edge, eliminating asynchronous timing hazards.
NoBL™ logic enables true back-to-back read/write operations by internally managing output buffer timing-eliminating need for external OE control during data transfers. Burst addressing is supported via ADV/LD input, with configurable linear or interleaved order, and ZZ sleep mode reduces standby current to 120 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 167 MHz - enables sustained 167 MT/s throughput with no wait states |
| Access Time | 3.4 ns - defines minimum clock-to-output delay for timing-critical interfaces |
| Supply Voltages | 3.3 V core (VDD), 2.5 V I/O (VDDQ) - supports mixed-voltage system integration |
| Standby Current | 120 mA - measured at CMOS operating conditions, critical for power budgeting in idle states |
| Burst Capability | Linear or interleaved - determines address increment pattern for sequential accesses in cache or FIFO applications |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing without additional test fixtures |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Synchronous Address Input | 18-bit address bus sampled on CLK rising edge; selects one of 2M locations |
| BWa–BWd | Byte Write Select | Four active-low signals controlling 36-bit DQa–DQd and parity DQPa–DQPd groups independently |
| CLK, CEN | Clock & Enable | CLK qualified by CEN: when CEN=HIGH, clock is masked and previous cycle extended |
| CE1, CE2, CE3 | Chip Enable Group | Three-signal decode (CE1=L, CE2=H, CE3=L) selects device; enables bank isolation in multi-SRAM systems |
| OE | Asynchronous Output Enable | Tri-states outputs during write cycles and after deselection; masked automatically to prevent bus contention |
| ADV/LD | Burst Address Control | HIGH advances internal counter for burst reads/writes; LOW loads new base address from A[17:0] |
| ZZ | Deep Sleep Control | Active-low entry into low-power sleep mode; reduces ICC to 120 mA while retaining data |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables consecutive read/write operations with zero wait states - eliminates pipeline stalls in high-speed packet buffering |
| Fully Registered I/O | All inputs and outputs synchronized to CLK rising edge - ensures deterministic setup/hold timing across temperature/voltage |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse width constraints - simplifies controller design |
| Byte-Write Select (BWa–BWd) | Independent 9-bit write masking per data nibble - supports partial-word updates without read-modify-write overhead |
| JTAG Boundary Scan | IEEE 1149.1 compliance enables PCB-level interconnect testing - reduces test development cost in high-reliability systems |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in a 10Gbps switch ASIC interface. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer between MAC and traffic manager. Use Value: 167 MHz zero-wait-state operation sustains full line-rate buffering; NoBL™ ensures back-to-back frame writes without pipeline bubbles. | Use Scenario: Frame assembly/disassembly in OC-192 SONET/SDH line cards. IC Role / Device Role / Timing Role: Synchronous burst SRAM providing deterministic access for ATM cell reassembly engines. Use Value: Linear burst mode aligns with cell payload addressing; 3.4 ns clock-to-out meets tight jitter budgets in telecom timing recovery loops. |
| Baseband Processing Cache | Radar Signal Processing FIFO |
Use Scenario: Temporary storage of decoded LTE symbols in wireless baseband processors. IC Role / Device Role / Timing Role: Pipelined SRAM used as symbol-level cache between FFT engine and channel decoder. Use Value: Byte-write capability allows selective update of symbol subsets; 2.5 V I/O matches FPGA I/O voltage standards. | Use Scenario: Real-time buffering of ADC samples in phased-array radar front ends. IC Role / Device Role / Timing Role: High-reliability SRAM serving as acquisition FIFO between ADC and DSP subsystem. Use Value: ZZ sleep mode cuts power during beam dwell intervals; JTAG scan verifies interconnect integrity before mission-critical operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L167BG | Same 2M × 36 density, 167 MHz speed, but uses QDR-II+ interface with separate read/write clocks | Requires dual-clock controller logic; not pin-compatible; higher bandwidth but greater routing complexity | Select when system demands >334 MT/s aggregate bandwidth and controller supports QDR-II+ protocol |
| ISSI IS61WV204836BLL-167TQLI | Functionally compatible ZBT-style SRAM, same 100-pin TQFP package, but lacks JTAG and ZZ sleep mode | No boundary scan test support; higher standby current (180 mA vs. 120 mA); identical timing and pinout | Select for cost-sensitive industrial applications where testability and ultra-low-power sleep are non-critical |
Compared with IDT72T3615L167BG and IS61WV204836BLL-167TQLI, CY7C1470BV33-167BZXI uniquely combines NoBL™ zero-latency pipelining, integrated JTAG, and deep-sleep mode - making it optimal for telecom and defense systems requiring both performance determinism and production testability.
Availability
CY7C1470BV33-167BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing FIFO applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1470BV33-167BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.
CY7C1470BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-throughput memory interfacing in networking and telecom infrastructure where latency predictability and burst efficiency are critical.
FAQ
What is the function of the ADV/LD pin in CY7C1470BV33-167BZXI?
The ADV/LD pin controls burst addressing behavior: when HIGH and CEN is active, it advances the internal address counter for sequential accesses; when LOW, it loads a new base address from the A[17:0] inputs. This dual-mode operation enables flexible burst initiation and restart without external address generation logic.
Does CY7C1470BV33-167BZXI support both linear and interleaved burst orders?
Yes - burst order is determined by the MODE pin state at the start of a burst sequence. MODE = LOW selects linear addressing (incremental), while MODE = HIGH selects interleaved addressing (bit-swapped). Both modes are fully supported in hardware and require no firmware configuration.
How does the ZZ (Sleep Mode) pin affect power consumption and data retention?
When ZZ is asserted LOW, the device enters deep sleep mode, reducing ICC to 120 mA while maintaining full data retention across the commercial temperature range (–40°C to +85°C). Data remains valid indefinitely as long as VDD and VDDQ remain within specification; no refresh or external intervention is required.
Can CY7C1470BV33-167BZXI operate with only 3.3 V supply, or is 2.5 V I/O mandatory?
The device requires both supplies: 3.3 V for core logic (VDD) and 2.5 V for I/O buffers (VDDQ). Operating VDDQ outside 2.4 V–2.6 V violates AC timing specs and risks signal integrity failure. The 2.5 V I/O rail is mandatory for guaranteed 167 MHz operation and proper DQ slew rate control.
CY7C1470BV33-167BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1470BV33-167BZXI FAQ
1.How can I place an order for CY7C1470BV33-167BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470BV33-167BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1470BV33-167BZXI reliable?
The price and inventory of CY7C1470BV33-167BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV33-167BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1470BV33-167BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV33-167BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1470BV33-167BZXI?
CY7C1470BV33-167BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1470BV33-167BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1470BV33-167BZXI?
For technical support, including CY7C1470BV33-167BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV33-167BZXI requirements.
6.How does Aetrix verify that CY7C1470BV33-167BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1470BV33-167BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV33-167BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1470BV33-167BZXI?
All CY7C1470BV33-167BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV33-167BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470BV33-167BZXI part is unused and in its original packaging.
Return procedure for CY7C1470BV33-167BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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