Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1470BV33-200AXC

Part No.:
CY7C1470BV33-200AXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1470BV33-200AXC.pdf
Description:
ZBT SRAM, 2MX36, 3NS PQFP100
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:115

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1470BV33 from Cypress Semiconductor is a 72-Mbit (2M × 36) pipelined synchronous SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom infrastructure. It operates at 200 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.0 ns clock-to-output time. Its fully registered inputs/outputs enable true back-to-back read/write operations in packet buffering and cache applications.

For engineers reviewing the CY7C1470BV33 datasheet, CY7C1470BV33 pinout, CY7C1470BV33 application, or CY7C1470BV33 equivalent, key selection criteria include burst mode support (linear/interleaved), byte write capability via four BW pins, synchronous self-timed writes, JTAG boundary scan compliance, and compatibility with ZBT™-based system designs requiring deterministic latency.

Technical Context

The CY7C1470BV33 implements a synchronous pipelined architecture with on-chip address counters, burst logic, and output register staging-all synchronized to the rising edge of CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without interlock delays.

All control signals (CE1, CE2, CE3, WE, ADV/LD, CEN, OE) are sampled synchronously on CLK's rising edge, while OE remains asynchronous for output tri-state control. The device supports linear or interleaved burst orders and includes ZZ Sleep Mode and Stop Clock options for power management in burst-intensive systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization), enabling single-chip replacement for dual 36-bit ZBT SRAMs in high-bandwidth data paths.
Max Clock Frequency 200 MHz - guarantees sustained 200 MT/s throughput with no wait states in pipelined operation.
Access Time 3.0 ns - defines minimum clock-to-output delay for timing-critical read cycles in switch fabric controllers.
Supply Voltage 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - allows interoperability with both 3.3 V and 2.5 V logic families without level shifters.
Byte Write Control Four independent BWa–BWd pins - enables selective 9-bit writes to individual 36-bit data words, reducing bus contention in multi-protocol packet engines.
Power Management ZZ Sleep Mode + CEN-controlled clock gating - reduces standby current to 120 mA while preserving data and state for rapid wake-up in burst-scheduled systems.
JTAG Support IEEE 1149.1 compliant - provides production testability and in-system debug visibility without requiring external test fixtures.

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Synchronous Address Input 18-bit address bus sampled on CLK rising edge; selects one of 2M locations in 2M × 36 configuration.
BWa–BWd Synchronous Byte Write Select Active-low controls write enable for four 9-bit subwords (DQa/DQPa through DQd/DQPd); qualified by WE and CLK.
CLK System Clock Input Rising-edge-triggered master clock; gated by CEN to extend previous cycle without deselection.
CEN Clock Enable Active-low synchronous gate for CLK; suspends operation while retaining internal state for low-latency resumption.
CE1, CE3 Synchronous Chip Enable (Low) Combined with CE2 (high-active) for 3-input bank decode; enables full device selection with setup/hold timing referenced to CLK.
OE Asynchronous Output Enable Active-low tri-states DQ outputs during writes or deselected states; masked automatically during write data windows.
DQa–DQd, DQPa–DQPd Bidirectional Data I/O 36-bit data bus (four 9-bit groups); direction controlled by OE and internal read/write state machine.
ADV/LD Advance/Load Control High = increment internal burst counter; Low = load new address from A[17:0]; critical for burst sequence control.
ZZ Deep Sleep Mode Active-low entry into ultra-low-power state (ISB ≤ 120 mA); retains memory contents and register states.

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables unlimited back-to-back reads/writes with zero wait states-eliminates pipeline stalls in high-frequency packet forwarding engines.
Full Synchronous Registration All inputs and outputs registered to CLK rising edge-ensures deterministic timing closure across 200 MHz PCB traces without external latch logic.
Configurable Burst Order Supports both linear and interleaved burst addressing-matches legacy ZBT controller requirements and modern network processor burst patterns.
Self-Timed Write Circuitry On-chip write timing control eliminates external write pulse width constraints-simplifies interface design for FPGA-based memory controllers.
3.3 V Core / Dual-Voltage I/O VDDQ supports 3.3 V or 2.5 V operation-enables direct connection to ASICs or FPGAs with mixed I/O voltage domains without level translators.

Applications

Packet Buffering in Switch Fabric Cache Memory for Network Processors

Use Scenario: High-speed Ethernet switch ASICs require low-latency, burst-capable memory to store ingress/egress packet headers and metadata.

IC Role / Device Role / Timing Role: Acts as primary 36-bit wide packet descriptor buffer with deterministic 3.0 ns read access and zero-wait-state writes.

Use Value: Enables line-rate 10 GbE packet processing by sustaining 200 MT/s bidirectional throughput without arbitration overhead.

Use Scenario: Multi-threaded network processors use fast SRAM for instruction and data caches to minimize stall cycles during parallel packet inspection.

IC Role / Device Role / Timing Role: Serves as L1/L2 cache tag/data array with pipelined read-after-write capability and burst coherency control.

Use Value: Reduces average memory access latency by 40% compared to asynchronous SRAM, improving per-thread instruction throughput.

Backplane Interface Memory Telecom Line Card Buffering

Use Scenario: Optical transport equipment uses burst-mode SRAM to align and serialize/deserialize data across OC-192/STM-64 backplanes.

IC Role / Device Role / Timing Role: Provides synchronized 2M × 36 storage for frame alignment buffers with precise clock-domain crossing via registered I/O.

Use Value: Eliminates FIFO depth uncertainty by guaranteeing fixed 1-cycle latency for all burst accesses, simplifying timing margin analysis.

Use Scenario: Wireless base station line cards buffer uplink/downlink channel data between RF front-end and baseband processors.

IC Role / Device Role / Timing Role: Functions as dual-port-like burst buffer using CE partitioning and byte-write granularity for concurrent channel handling.

Use Value: Supports simultaneous 4× WCDMA channels with independent 9-bit subword writes, reducing memory bandwidth contention by 75%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L10PF 2M × 36, 10 ns access, 100 MHz max frequency; lacks ZZ sleep mode and JTAG scan. Targeted at cost-sensitive industrial controllers where burst depth < 4 and power budget > 300 mA. Select when lower clock rate and absence of deep sleep are acceptable trade-offs for reduced BOM cost.
ISSI IS61WV204836BLL-200BLI 2M × 36, 200 MHz, 3.3 V only (no VDDQ flexibility); no ADV/LD pin or interleaved burst support. Suitable for fixed-burst-length embedded systems lacking complex address sequencing requirements. Choose when system controller does not require burst counter advancement or dual-voltage I/O interfacing.

Compared with IDT72V2115L10PF and IS61WV204836BLL-200BLI, the CY7C1470BV33 uniquely combines 200 MHz operation, NoBL™ zero-wait-state performance, ZZ sleep mode, and IEEE 1149.1 JTAG-making it optimal for telecom infrastructure demanding both speed and testability.

Availability

CY7C1470BV33 is available at Aetrix Electronics and suitable for packet buffering in switch fabrics, cache memory in network processors, and backplane interface buffering requiring stable component supply across multi-year telecom equipment deployments.

Supply support for CY7C1470BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C1470BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-bandwidth memory subsystems in networking and telecom infrastructure where latency predictability and burst efficiency are critical.

FAQ

What is the function of the ADV/LD pin in burst operations?

The ADV/LD pin controls the internal address counter behavior: when HIGH and CEN is active, it increments the counter for sequential burst access; when LOW, it loads a new base address from A[17:0]. This enables both continuous streaming and random-start burst modes without external address generation logic, essential for flexible packet header processing.

How does the CY7C1470BV33 handle simultaneous read and write requests?

It does not support true simultaneous read/write on the same port. However, its pipelined architecture allows back-to-back operations-e.g., a write completes on clock N, and a read begins on clock N+1-with no wait states. Internal write data coherency logic ensures reads return updated values after the write cycle finishes, maintaining data integrity in burst pipelines.

Can the CY7C1470BV33 operate with 2.5 V I/O while maintaining 3.3 V core supply?

Yes. VDDQ accepts 2.5 V ± 0.2 V while VDD remains at 3.3 V ± 0.3 V. This dual-voltage I/O capability allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, reducing signal integrity risk and board space. All AC/DC specifications in the datasheet are validated for this mixed-supply condition.

Is the ZZ pin compatible with standard CMOS logic levels?

Yes. ZZ is a CMOS-compatible input with VIH ≥ 2.0 V and VIL ≤ 0.8 V under 3.3 V supply conditions. When asserted LOW, it places the device in deep sleep mode, reducing ICC to ≤120 mA while retaining memory content and register states. Recovery time from ZZ is 20 ns, enabling rapid reactivation in burst-scheduled systems.

CY7C1470BV33-200AXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1470BV33-200AXC FAQ

1.How can I place an order for CY7C1470BV33-200AXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1470BV33-200AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1470BV33-200AXC reliable?

The price and inventory of CY7C1470BV33-200AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV33-200AXC is usually 5 days.

3.What payment methods are accepted for CY7C1470BV33-200AXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV33-200AXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1470BV33-200AXC?

CY7C1470BV33-200AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1470BV33-200AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1470BV33-200AXC?

For technical support, including CY7C1470BV33-200AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV33-200AXC requirements.

6.How does Aetrix verify that CY7C1470BV33-200AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1470BV33-200AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV33-200AXC meets industry standards.

7.What is the process for return or replacement of CY7C1470BV33-200AXC?

All CY7C1470BV33-200AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV33-200AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1470BV33-200AXC part is unused and in its original packaging.

Return procedure for CY7C1470BV33-200AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1470BV33-200AXC Tags

  • CY7C1470BV33-200AXC
  • CY7C1470BV33-200AXC PDF
  • CY7C1470BV33-200AXC Datasheet
  • CY7C1470BV33-200AXC Specifications
  • CY7C1470BV33-200AXC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1470BV33-200AXC
  • Buy CY7C1470BV33-200AXC
  • CY7C1470BV33-200AXC Price
  • CY7C1470BV33-200AXC Distributor
  • CY7C1470BV33-200AXC Supplier
  • CY7C1470BV33-200AXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER