Cypress Semiconductor Corp CY7C1470V33-167BZXI

Overview

CY7C1470V33-167BZXI from Cypress Semiconductor is a 72 Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with 3.4 ns clock-to-output delay, supports byte-write control via four BW pins (BWa–BWd), uses single 3.3 V core supply and 3.3 V/2.5 V I/O supply, and delivers zero-wait-state back-to-back read/write operations in burst or single-access modes.

For engineers reviewing the CY7C1470V33-167BZXI datasheet, CY7C1470V33-167BZXI pinout, CY7C1470V33-167BZXI application, or CY7C1470V33-167BZXI equivalent, this device serves as a drop-in replacement for ZBT SRAMs in packet buffering, cache coherency, and FPGA interface applications requiring deterministic latency and full pipelining.

Technical Context

The CY7C1470V33-167BZXI implements fully registered synchronous operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without inter-cycle gaps.

It features synchronous self-timed writes qualified by WE and BWa–BWd, internally timed output buffer control (removing need for asynchronous OE timing management), and dual-mode burst addressing (linear or interleaved) selected via the MODE strap pin. Clock Enable (CEN) suspends operation without deselecting the device, preserving internal state across clock gating.

Key Specifications

Pinout & Package

CY7C1470V33-167BZXI is available in JEDEC-standard Pb-Free 100-pin TQFP (14 × 14 mm, 0.5 mm pitch) and Pb-Free 165-ball FBGA (15 × 17 mm, 1.0 mm ball pitch). Both packages support industrial temperature range (–40°C to +85°C) and JTAG boundary scan (IEEE 1149.1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV204836BLL-167TQLI, CY7C1470V33-167BZXI uniquely combines NoBL™ zero-wait-state operation, programmable burst order, integrated parity I/O, and deep-sleep mode-making it optimal for latency-constrained, power-aware, and fault-tolerant telecom infrastructure.

Availability

CY7C1470V33-167BZXI is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor cache, and telecom line card control memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470V33-167BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1470V33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in packet-switched networks and real-time embedded systems.

FAQ

What is the function of the MODE pin on CY7C1470V33-167BZXI?

The MODE pin is a static strap input that selects burst addressing order: pulled LOW for linear burst (sequential address increment), HIGH for interleaved burst (bit-swapped increment). It must remain stable during operation; floating defaults to HIGH (interleaved). This setting directly determines how the internal burst counter increments during ADV/LD-HIGH cycles and affects compatibility with memory controller burst expectations.

Does CY7C1470V33-167BZXI support 2.5 V I/O signaling?

Yes-CY7C1470V33-167BZXI supports 2.5 V I/O operation via its dedicated VDDQ supply pin, while maintaining 3.3 V core voltage (VDD). This dual-supply design allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, provided VDDQ is set to 2.5 V and all timing parameters (e.g., setup/hold) are validated per the 2.5 V I/O section of the datasheet.

How does the ZZ (Sleep) mode reduce power consumption?

Asserting ZZ LOW places CY7C1470V33-167BZXI into deep-sleep mode, reducing ICC standby current to under 100 µA while retaining memory contents. Unlike standard standby (CE-only), ZZ disables internal clocks and bias circuits more aggressively. Exit time is 100 ns max, and the device resumes normal operation on the next valid clock edge after ZZ is deasserted.

Can CY7C1470V33-167BZXI be used as a direct replacement for ZBT SRAMs?

Yes-CY7C1470V33-167BZXI is pin-compatible and functionally equivalent to ZBT SRAMs (e.g., IDT72V2115), supporting identical control protocols, timing models, and burst behaviors. Key differentiators include integrated ZZ sleep, MODE-selectable burst order, and parity I/O-features that extend functionality without compromising drop-in compatibility in existing ZBT-based designs.