Cypress Semiconductor Corp CY7C1471BV25-133AXC

Overview

CY7C1471BV25-133AXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous flow-through SRAM with NoBL™ architecture, supporting true back-to-back read/write operations at 133 MHz with zero wait states, 6.5 ns clock-to-output delay, and 2.5V VDDQ I/O supply - deployed in high-throughput packet buffering and network switch data path applications.

For engineers reviewing the CY7C1471BV25-133AXC datasheet, CY7C1471BV25-133AXC pinout, CY7C1471BV25-133AXC application, or CY7C1471BV25-133AXC equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select granularity (4 × 9-bit bytes), synchronous chip enable logic (CE1/CE2/CE3), and JTAG boundary-scan testability for system-level validation.

Technical Context

This SRAM implements registered synchronous inputs qualified by CLK rising edge and CEN assertion, with internal self-timed write control eliminating external write pulse timing constraints. The NoBL™ architecture ensures no dead cycles between consecutive read/write transitions via on-chip burst counter and address steering logic.

It supports linear or interleaved burst orders selected by the MODE strap pin, provides asynchronous OE for output tri-state control independent of clock, and integrates automatic output driver tri-stating during write data phases to prevent bus contention - all while maintaining IEEE 1149.1 JTAG compliance for production test.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 14 mm, 0.5 mm pitch), Pb-free compliant per JEDEC standard. Pin layout optimized for signal integrity in high-speed memory buses with dedicated VSS/VDDQ decoupling zones.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PFI and IS61WV204836BLL-133TQLI, CY7C1471BV25-133AXC uniquely combines JTAG testability, triple CE depth scalability, and hardware-configurable burst order - critical for field-upgradable telecom infrastructure and safety-certified motion systems.

Availability

CY7C1471BV25-133AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA co-processor cache, and industrial motion controller buffer applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1471BV25-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

This device belongs to the NoBL™ SRAM product line, engineered specifically for zero-wait-state, burst-mode data buffering in high-speed networking and real-time control systems.

FAQ

What is the function of the MODE pin, and how must it be connected?

The MODE pin selects burst order: tied to GND for linear burst, or to VDD/floating for interleaved burst. It is a static strap pin sampled at power-up; no dynamic reconfiguration is supported. Leaving it unconnected defaults to interleaved mode due to internal pull-up behavior confirmed in Rev. *F datasheet Section 3.1.

Can CY7C1471BV25-133AXC operate with only two chip enables?

Yes - CE2 is active-high while CE1 and CE3 are active-low; any combination can be used for device selection. For simple single-bank operation, tie CE2 HIGH and use CE1 as primary enable, leaving CE3 HIGH or LOW per system decode logic - all three are independently sampled on CLK edge per datasheet Table 1.

Does the ZZ sleep mode retain data during power loss?

No - ZZ mode reduces active current to ≤120 mA while preserving data only as long as VDD and VDDQ remain within specification (2.3–2.7 V). It is not a battery-backed or nonvolatile state; full power loss results in memory content corruption, consistent with standard SRAM behavior.

Is the 100-pin TQFP package RoHS-compliant?

Yes - the "X" suffix in -133AXC denotes JEDEC-standard Pb-free packaging. Cypress documentation (Doc #001-15013 Rev. *F, Page 1) explicitly states CY7C1471BV25 is available in "Pb-free 100-pin TQFP", meeting RoHS Directive 2011/65/EU requirements.