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Cypress Semiconductor Corp CY7C1471BV33-133BZXC
- Part No.:
- CY7C1471BV33-133BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1471BV33-133BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:124
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Product details
Overview
CY7C1471BV33-133BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous NoBL™ flow-through SRAM with zero wait-state operation at 133 MHz, 6.5 ns clock-to-output delay, 3.3 V core/I/O supply, and JEDEC-standard Pb-free 100-pin TQFP packaging. It serves as a high-throughput data buffer in network packet processors requiring back-to-back read/write transitions without latency penalties.
For engineers reviewing the CY7C1471BV33-133BZXC datasheet, CY7C1471BV33-133BZXC pinout, CY7C1471BV33-133BZXC application, or CY7C1471BV33-133BZXC equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select granularity (4× BWx), synchronous chip enable logic (CE1/CE2/CE3), ZZ sleep mode behavior, and JTAG boundary-scan compatibility for system-level testability.
Technical Context
The device implements a fully synchronous, rising-edge-triggered interface with registered address, control, and data inputs. All operations-including single/burst reads/writes-are pipelined and qualified by CEN, with ADV/LD controlling burst counter advance or new address load.
NoBL™ architecture eliminates bus latency via self-timed output buffers and synchronous write circuitry, enabling consecutive read/write cycles with data valid on every clock edge. Burst order (linear or interleaved) is selected statically via the MODE strap pin, not dynamically.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization), supporting high-bandwidth buffering in telecom line cards. |
| Max Clock Frequency | 133 MHz - enables sustained 133 MT/s throughput with no wait states. |
| Access Time (tCDV) | 6.5 ns - defines minimum clock-to-output delay for timing-critical datapaths. |
| VDD / VDDQ | 3.3 V core & I/O supply - compatible with legacy 3.3 V system rails and level-shifted interfaces. |
| Burst Capability | Linear or interleaved 4-word burst - matches CPU cache line or packet header alignment requirements. |
| Byte Write Control | Four independent BWx (BWA–BWD) signals - allows selective 8-bit writes within 36-bit word without read-modify-write. |
| Sleep Mode | ZZ pin (asynchronous active-HIGH) reduces standby current to <120 µA - supports low-power idle states in portable infrastructure. |
Pinout & Package
Package: 100-pin thin quad flat pack (TQFP), 14 × 20 × 1.4 mm, Pb-free per JEDEC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[1:0] | Synchronous Address Input | Two LSBs sampled on CLK rise; feed internal 2-bit burst counter for sequential access. |
| BWA–BWD | Synchronous Byte Write Select | Active-LOW per-byte enables; qualified with WE to mask write data lanes independently. |
| CE1, CE2, CE3 | Synchronous Chip Enable | Three-level decode (CE1/CE3 active-LOW, CE2 active-HIGH) enables simple depth expansion across multiple devices. |
| CLK, CEN | Clock & Clock Enable | CEN masks CLK asynchronously; preserves internal state during clock gating without deselection. |
| DQ[35:0], DQP[3:0] | Bidirectional Data I/O | 36 data + 4 parity lines; direction controlled by OE; auto-tri-stated during write data phase to prevent bus contention. |
| MODE | Strap Pin | Static burst order selection: GND = linear, VDD/floating = interleaved - no runtime reconfiguration. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Eliminates dead cycles between consecutive read/write operations, enabling true back-to-back transfers at full 133 MHz. |
| Registered Synchronous Interface | All control/address/data inputs latched on CLK rising edge, simplifying timing closure in high-speed PCB layouts. |
| Self-Timed Write Circuitry | Removes external write pulse timing constraints; internal logic guarantees write completion before next cycle. |
| Asynchronous ZZ Sleep Mode | Reduces power to microamp range while preserving data integrity - ideal for bursty traffic patterns in baseband processing. |
| JTAG Boundary Scan (IEEE 1149.1) | Enables board-level interconnect testing without dedicated test pads; TDO available in FBGA only. |
Applications
| Network Packet Buffering | Baseband Signal Processing |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency data buffer interfacing directly to MAC controllers via synchronous parallel bus. Use Value: 6.5 ns tCDV and NoBL™ architecture ensure frame payload transfer completes within one clock cycle, eliminating pipeline stalls. | Use Scenario: Temporary storage of OFDM symbol samples in LTE eNodeB digital front-end. IC Role / Device Role / Timing Role: Burst-access memory for FFT/IFFT result staging, synchronized to DSP clock domain. Use Value: Interleaved burst mode aligns with DSP memory access patterns, reducing average access latency by 30% vs. linear mode. |
| Telecom Line Card Control Plane | Radar Signal Acquisition Buffer |
Use Scenario: Holding configuration tables and status registers for multi-port T1/E1 framers. IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by ARM host and hardware accelerators. Use Value: Four independent BWx pins allow atomic updates to individual protocol fields without corrupting adjacent register bits. | Use Scenario: Capturing high-rate ADC samples from phased-array radar receivers before DSP compression. IC Role / Device Role / Timing Role: First-stage circular buffer feeding real-time beamforming engines. Use Value: ZZ sleep mode cuts standby power by >99% during inter-pulse intervals, extending thermal headroom in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L133PFGI | 4M × 18 organization, 133 MHz, 3.3 V, but uses ZBT™ (not NoBL™) architecture with OE-dependent output timing. | Lacks automatic output tri-state during write; requires external OE coordination to avoid bus contention. | Select when legacy ZBT™ compatibility is required and system-level OE control is already implemented. |
| ISSI IS61WV102436BLL-133TQLI | 2M × 36, 133 MHz, 3.3 V, but lacks JTAG boundary scan and ZZ sleep mode; standby current >250 µA. | No built-in testability or ultra-low-power idle - unsuitable for field-upgradable telecom modules. | Select for cost-sensitive industrial control where JTAG and deep sleep are non-critical. |
Compared with IDT72V2115L133PFGI and IS61WV102436BLL-133TQLI, CY7C1471BV33-133BZXC delivers deterministic NoBL™ timing, integrated JTAG for production test, and sub-120 µA ZZ-mode power - critical for carrier-grade equipment with stringent uptime and thermal requirements.
Availability
CY7C1471BV33-133BZXC is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and telecom line card control plane applications requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1471BV33-133BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications systems.
CY7C1471BV33 belongs to the NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-throughput buffering in packet-switched infrastructure and real-time signal processing subsystems.
FAQ
What is the function of the MODE pin, and how must it be connected?
The MODE pin is a static strap input that selects burst order: tied to GND for linear burst sequence, or to VDD/floating for interleaved burst. It is sampled only at power-up or reset; no dynamic switching is supported. Leaving it unconnected defaults to interleaved mode due to internal pull-up behavior confirmed in the datasheet's DC characteristics table.
Can CE2 be used as an active-LOW enable like CE1 and CE3?
No - CE2 is defined as active-HIGH per the pin definition table and truth tables in the datasheet. Using it as active-LOW violates timing and functional specifications. Correct depth expansion requires CE1 and CE3 asserted LOW while CE2 is asserted HIGH, forming a 3-bit decode (010) for device selection.
Does the ZZ sleep mode retain data when VDD is removed?
No - ZZ mode preserves data only while VDD remains within operating range (3.135 V to 3.465 V). Removing VDD causes immediate data loss. ZZ is a low-power active state, not a battery-backed retention mode; it reduces current draw while maintaining powered operation and data integrity.
Is the TDO pin available in the 100-pin TQFP package?
No - the TDO pin is explicitly stated as "not available on TQFP packages" in the Pin Definitions section (page 7). It is present only in the 165-ball FBGA variant. Systems requiring JTAG boundary scan must use the FBGA package or implement alternative test strategies for TQFP-based designs.
CY7C1471BV33-133BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1471BV33-133BZXC FAQ
1.How can I place an order for CY7C1471BV33-133BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1471BV33-133BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1471BV33-133BZXC reliable?
The price and inventory of CY7C1471BV33-133BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1471BV33-133BZXC is usually 5 days.
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Once your CY7C1471BV33-133BZXC order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for CY7C1471BV33-133BZXC?
For technical support, including CY7C1471BV33-133BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1471BV33-133BZXC requirements.
6.How does Aetrix verify that CY7C1471BV33-133BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1471BV33-133BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1471BV33-133BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1471BV33-133BZXC?
All CY7C1471BV33-133BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1471BV33-133BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1471BV33-133BZXC part is unused and in its original packaging.
Return procedure for CY7C1471BV33-133BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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