Cypress Semiconductor Corp CY7C1471V25-133AXC

Overview

CY7C1471V25-133AXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous NoBL™ SRAM with 2.5V I/O supply (VDDQ), 133 MHz operation, 6.5 ns clock-to-output delay, and flow-through burst architecture enabling true back-to-back read/write cycles without wait states. It serves as high-throughput buffer memory in network packet processors requiring deterministic latency and zero dead cycles.

For engineers reviewing the CY7C1471V25-133AXC datasheet, CY7C1471V25-133AXC pinout, CY7C1471V25-133AXC application, or CY7C1471V25-133AXC equivalent, key selection criteria include synchronous byte write capability, registered address/data inputs, JTAG boundary scan support, ZZ sleep mode, and 100-pin TQFP package compatibility with ZBT™-based systems.

Technical Context

The device implements a fully synchronous flow-through architecture with rising-edge clocked input registers for all control and address signals, including ADV/LD, CEN, CE1–CE3, WE, and BWx. Burst sequencing is controlled by the MODE strap pin, selecting linear or interleaved order.

Internally self-timed output buffers eliminate OE dependency for read timing; outputs are automatically tri-stated during write data phases and chip deselect. Synchronous self-timed writes use on-chip control logic, while asynchronous ZZ and OE provide low-power and output direction control independent of clock timing.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 14 mm, 0.5 mm pitch), Pb-free compliant, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT 72V251L15PF and ISSI IS61WV102436B, CY7C1471V25-133AXC delivers 33% higher bandwidth, 2.5V I/O compatibility, hardware-managed sleep mode, and configurable burst sequencing - critical for next-generation packet processing and real-time instrumentation.

Availability

CY7C1471V25-133AXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, and baseband signal processing requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for CY7C1471V25-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-throughput buffering in networking and real-time signal processing systems where deterministic latency and burst efficiency are critical.

FAQ

What is the function of the MODE pin on CY7C1471V25-133AXC?

The MODE pin is a strap input that selects burst order: tied to GND for linear burst sequence, tied to VDD or left floating for interleaved burst. It is sampled only at power-up or reset and remains latched during operation. This setting determines how consecutive addresses are generated during burst reads/writes and must match the memory controller's expected sequence.

Does CY7C1471V25-133AXC require an external clock buffer for 133 MHz operation?

No external clock buffer is required. The device accepts a clean, single-ended 133 MHz clock directly on the CLK pin, provided setup/hold times (≥1.2 ns) and jitter (< ±50 ps) specifications are met. Input clock duty cycle must be 45–55%, and CEN must be asserted low for clock recognition. Board layout should minimize trace length and avoid routing near noisy signals.

How does automatic output tri-state work during write cycles?

During the data portion of any write cycle (i.e., when WE is active and DQs are driven as inputs), the output drivers are hardware-disabled regardless of OE state. This occurs synchronously on the same clock edge that samples WE and BWx. Tri-state persists through the entire write data window and releases only after the write completes and the device enters a new access phase.

Can CE2 be used as an active-low enable like CE1 and CE3?

No - CE2 is defined as active HIGH per the datasheet and pin definition table. Using it as active-low would invert chip select logic and cause unintended device activation or deselection. For consistent three-enable depth expansion, CE1 and CE3 must be driven active LOW while CE2 is driven active HIGH. Mixing polarity violates the synchronous enable hierarchy and may result in undefined behavior.