Cypress Semiconductor Corp CY7C1472BV33-167AXI
- Part No.:
- CY7C1472BV33-167AXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1472BV33-167AXI.pdf
- Description:
- IC SRAM 72MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1472BV33-167AXI from Cypress Semiconductor is a 3.3 V, 4M × 18 (72-Mbit) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It supports 167 MHz bus operation with zero wait states, features fully registered inputs/outputs, byte-write capability via BWa–BWb, and internal self-timed output buffer control eliminating asynchronous OE timing constraints.
For engineers reviewing the CY7C1472BV33-167AXI datasheet, CY7C1472BV33-167AXI pinout, CY7C1472BV33-167AXI application, or CY7C1472BV33-167AXI equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed write timing, 3.3 V/2.5 V I/O compatibility, and IEEE 1149.1 JTAG boundary scan compliance for system-level testability.
Technical Context
The device implements a pipelined read/write architecture where all address, control, and data signals are registered on the rising edge of CLK, enabling true back-to-back operations without bus latency. Its NoBL™ logic eliminates pipeline stalls by synchronizing output enable internally and decoupling OE from data validity timing.
Burst access is controlled via ADV/LD to advance or load the on-chip address counter, supporting both linear and interleaved burst orders. Write operations use synchronous self-timed circuitry qualified by WE and BWa–BWb, with tri-state control applied synchronously during write data windows to prevent bus contention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4M × 18 (72-Mbit total), configured as 4,194,304 words × 18 bits - enables compact wide-data-path buffering in packet forwarding engines. |
| Maximum Clock Frequency | 167 MHz - guarantees deterministic 5.99 ns clock period for timing-critical control-plane memory access. |
| Access Time | 3.4 ns - defines minimum clock-to-output delay for first-word read, critical for meeting setup time in FPGA-attached interfaces. |
| Supply Voltage | 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - allows interoperability with both LVTTL and SSTL-2 I/O standards without level shifters. |
| Byte Write Control | BWa, BWb (active-low) - enables independent 9-bit sub-word writes to DQa/DQPa and DQb/DQPb, reducing write power and bus traffic. |
| Power Consumption | 450 mA max operating current, 120 mA CMOS standby - supports thermal management in dense line-card layouts with multiple SRAMs. |
| JTAG Support | IEEE 1149.1 compliant - provides standardized boundary-scan test access for PCB interconnect verification in multi-SRAM modules. |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:17] | Synchronous Address Input | 18-bit address bus sampled on rising CLK edge; selects one of 4M locations in 4M × 18 configuration. |
| BWa, BWb | Synchronous Byte Write Select | Active-low controls 9-bit write masks: BWa → DQa/DQPa (bits 0–8), BWb → DQb/DQPb (bits 9–17). |
| CLK, CEN | Clock & Clock Enable | CLK qualified by active-low CEN; deasserting CEN extends previous cycle without deselecting device. |
| CE1, CE2, CE3 | Synchronous Chip Enables | Three-level decode (CE1/L, CE2/H, CE3/L) enables bank selection in multi-SRAM systems with minimal glue logic. |
| ADV/LD | Address Counter Control | HIGH advances internal burst counter; LOW loads new address - essential for burst-mode packet header processing. |
| DQa–DQb, DQPa–DQPb | Bidirectional Data I/O | 18-bit data bus (DQa/DQb = main data, DQPa/DQPb = parity); direction controlled by OE and internal write state machine. |
| OE | Asynchronous Output Enable | Active-low; masked during write data phase and post-deselection to ensure glitch-free bus handoff. |
| ZZ | Deep Sleep Mode | Active-low input reduces standby current further during idle periods in power-sensitive telecom modules. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited back-to-back reads/writes at full 167 MHz with zero wait states - eliminates pipeline bubbles in high-speed packet buffers. |
| Fully Registered Interface | All inputs and outputs synchronized to CLK rising edge - simplifies timing closure with FPGAs and ASICs by removing asynchronous path dependencies. |
| Synchronous Self-Timed Writes | On-chip write timing logic eliminates external write-pulse width constraints - removes need for precise WE pulse generation in controller logic. |
| Burst Capability (Linear/Interleaved) | Reduces address bus overhead by 75% during sequential accesses - accelerates header parsing and descriptor table traversal in network processors. |
| 3.3 V Core / 2.5 V I/O Option | Supports mixed-voltage system integration - allows direct connection to 2.5 V FPGA I/O banks while maintaining 3.3 V SRAM core stability. |
Applications
| Network Packet Buffer | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet switch fabric ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced directly to packet processor's 18-bit data bus. Use Value: 167 MHz zero-wait-state operation sustains 3.0 Gbps sustained throughput (18 bits × 167 MHz), matching wire-speed line rates without stalling. |
Use Scenario: Caching signaling protocol descriptors (e.g., SIP, SS7) in carrier-grade media gateways. IC Role / Device Role / Timing Role: Dual-port accessible memory block used for real-time call setup/teardown state tables. Use Value: Byte-write capability (BWa/BWb) enables atomic 9-bit updates to status fields without disturbing adjacent control bits, ensuring data coherency. |
| Baseband Processing Buffer | Radar Signal Preprocessing |
|
Use Scenario: Temporary storage of OFDM symbol samples between FFT and channel estimation blocks in LTE eNodeB baseband units. IC Role / Device Role / Timing Role: Burst-accessed FIFO-like memory with interleaved addressing for parallel sample handling. Use Value: Interleaved burst mode aligns with FFT output ordering, cutting address generation logic by 50% and reducing controller gate count. |
Use Scenario: Holding digitized radar return samples prior to CFAR detection in airborne phased-array systems. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory for time-critical signal chain buffering. Use Value: 3.4 ns access time ensures sample-to-processing latency remains under 6 ns - within timing budget for real-time Doppler shift compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L16PF | 4M × 18, 167 MHz, but uses QDR-II+ interface with separate read/write clocks - requires dual-clock domain design. | Optimized for asymmetric read-heavy workloads; lacks ZZ sleep mode and JTAG scan. | Select when system already employs QDR-II+ controllers and requires higher peak read bandwidth over sustained bidirectional throughput. |
| ISSI IS61WV102418BLL-167TQLI | 4M × 18, 167 MHz, single-clock NoBL-compatible interface, but no ADV/LD pin or burst order selection. | Limited to linear-only bursts; no interleaved mode support for FFT-ordered data. | Choose for cost-sensitive designs where burst flexibility is unnecessary and JTAG test is not required. |
Compared with IDT72V2115L16PF and IS61WV102418BLL-167TQLI, CY7C1472BV33-167AXI uniquely combines burst-order configurability (linear/interleaved), IEEE 1149.1 JTAG, and deep-sleep (ZZ) mode - making it optimal for programmable, testable, and power-aware telecom infrastructure.
Availability
CY7C1472BV33-167AXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and baseband signal preprocessing requiring stable component supply across extended product lifecycles.
Supply support for CY7C1472BV33-167AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial and communications markets.
CY7C1472BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, zero-latency memory access in high-speed packet processing and real-time signal conditioning systems.
FAQ
What is the function of the ADV/LD pin in burst operations?
The ADV/LD pin controls the internal address counter during burst access: when HIGH (with CEN active), it increments the counter to fetch the next sequential or interleaved address; when LOW, it loads a new base address from A[17:0]. This enables seamless transition between burst transfers and random-access modes without external address sequencing logic.
Does CY7C1472BV33-167AXI support 2.5 V I/O operation with 3.3 V core?
Yes - VDDQ is independently powered and accepts 2.5 V ±0.2 V, while VDD operates at 3.3 V ±0.3 V. This dual-supply configuration allows direct interfacing with 2.5 V FPGA I/O banks without level shifters, provided VDDQ and VDD sequencing meets tVR/tVF requirements per the datasheet.
How does the ZZ (Sleep) mode reduce power consumption?
Asserting ZZ LOW places the SRAM into deep sleep, reducing standby current to ≤50 µA (typical) - over 99% lower than standard CMOS standby (120 mA). All internal clocks and registers halt, but data retention is maintained as long as VDD and VDDQ remain within specification.
Can CY7C1472BV33-167AXI be used in place of CY7C1470BV33-167AXI?
No - although pin-compatible in 100-pin TQFP, CY7C1472BV33 is organized as 4M × 18 (72 Mbit), whereas CY7C1470BV33 is 2M × 36 (72 Mbit). Their address and data pin mappings differ: CY7C1472 uses BWa/BWb for two 9-bit byte groups, while CY7C1470 uses BWa–BWd for four 9-bit groups - requiring PCB layout and firmware changes.
CY7C1472BV33-167AXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1472BV33-167AXI FAQ
1.How can I place an order for CY7C1472BV33-167AXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1472BV33-167AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1472BV33-167AXI reliable?
The price and inventory of CY7C1472BV33-167AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1472BV33-167AXI is usually 5 days.
3.What payment methods are accepted for CY7C1472BV33-167AXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1472BV33-167AXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1472BV33-167AXI?
CY7C1472BV33-167AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1472BV33-167AXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1472BV33-167AXI?
For technical support, including CY7C1472BV33-167AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1472BV33-167AXI requirements.
6.How does Aetrix verify that CY7C1472BV33-167AXI is sourced from the original manufacturer or authorized distributors?
All CY7C1472BV33-167AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1472BV33-167AXI meets industry standards.
7.What is the process for return or replacement of CY7C1472BV33-167AXI?
All CY7C1472BV33-167AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1472BV33-167AXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1472BV33-167AXI part is unused and in its original packaging.
Return procedure for CY7C1472BV33-167AXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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