Cypress Semiconductor Corp CY7C1472BV33-200AXC

Overview

CY7C1472BV33-200AXC from Cypress Semiconductor is a 3.3 V, 4M × 18 (72-Mbit) synchronous pipelined SRAM with NoBL™ architecture, supporting 200 MHz zero-wait-state bus operation, 3.0 ns clock-to-output time, and fully registered inputs/outputs for true back-to-back read/write cycles in high-throughput memory subsystems such as network packet buffers and baseband processors.

For engineers reviewing the CY7C1472BV33-200AXC datasheet, CY7C1472BV33-200AXC pinout, CY7C1472BV33-200AXC application, or CY7C1472BV33-200AXC equivalent, key selection criteria include burst mode support (linear/interleaved), byte write capability via BWa–BWb, synchronous self-timed writes, and compatibility with 3.3 V/2.5 V I/O voltage domains.

Technical Context

The CY7C1472BV33-200AXC implements a No Bus Latency™ architecture that eliminates pipeline stalls by synchronously registering all address, control, and data signals on the rising edge of CLK, enabling consecutive read or write operations without wait states. Its internal burst logic supports both linear and interleaved addressing sequences.

It features three synchronous chip enables (CE1 low, CE2 high, CE3 low), asynchronous OE for output tri-state control, and Clock Enable (CEN) to suspend clock recognition without deselecting the device. Write operations are controlled by WE and two byte write selects (BWa, BWb), each governing 18-bit data lanes including parity bits DQPa/DQPb.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L10PF and IS61WV102418B, the CY7C1472BV33-200AXC delivers 2× higher throughput, integrated burst control, and active power management-making it essential for modern packet-processing and real-time signal chain architectures.

Availability

CY7C1472BV33-200AXC is available at Aetrix Electronics and suitable for network packet buffers, baseband processor caches, industrial PLC data logs, and avionics sensor fusion buffers requiring stable component supply across extended production lifecycles.

Supply support for CY7C1472BV33-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1472BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, burst-capable memory subsystems in telecom infrastructure and real-time embedded systems demanding deterministic timing and high reliability.

FAQ

What is the function of the ADV/LD pin in CY7C1472BV33-200AXC?

The ADV/LD pin controls the internal address counter behavior: when HIGH and CEN is active, it advances the burst address counter; when LOW, it loads a new starting address from A[17:0]. After device deselection, ADV/LD must be driven LOW to accept a new address, ensuring deterministic burst initialization in multi-cycle memory access sequences.

Does CY7C1472BV33-200AXC support 2.5 V I/O operation with 3.3 V core supply?

Yes. The device uses separate VDD (3.3 V) and VDDQ (2.5 V or 3.3 V) supplies, allowing direct interface with 2.5 V logic families while maintaining 3.3 V core stability. VDDQ must be powered before or simultaneously with VDD, and the 2.5 V I/O mode requires proper termination and AC timing validation per the datasheet's 2.5 V TAP test conditions.

How does the ZZ (Sleep) mode reduce power consumption?

Asserting ZZ LOW disables internal clocks, shuts down output drivers, and places memory arrays in retention mode, reducing standby current to ≤120 µA. This mode retains data without refresh and resumes normal operation within one clock cycle after ZZ is deasserted, making it ideal for intermittent data capture in power-constrained systems.

Can CY7C1472BV33-200AXC operate in interleaved burst mode without external address generation?

Yes. The device implements on-chip burst logic that automatically generates sequential or interleaved addresses based on the ADV/LD and MODE pin state. Once initiated, burst sequences require no external address updates-only CLK, CEN, and OE control-reducing controller overhead and improving bus efficiency in high-throughput applications.