Cypress Semiconductor Corp CY7C1472BV33-200BZXC
- Part No.:
- CY7C1472BV33-200BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1472BV33-200BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:138
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Product details
Overview
CY7C1472BV33-200BZXC from Cypress Semiconductor is a 3.3 V, 4M × 18 (72-Mbit) synchronous pipelined SRAM with NoBL™ architecture, supporting 200 MHz zero-wait-state bus operation, 3.0 ns clock-to-output time, and byte-write capability via BWa–BWb inputs. It serves as high-throughput data buffer in network packet processors requiring back-to-back read/write transitions.
For engineers reviewing the CY7C1472BV33-200BZXC datasheet, CY7C1472BV33-200BZXC pinout, CY7C1472BV33-200BZXC application, or CY7C1472BV33-200BZXC equivalent, key selection criteria include synchronous self-timed write timing, JEDEC-standard 100-pin TQFP package compatibility, burst mode support (linear/interleaved), and IEEE 1149.1 JTAG boundary scan integration.
Technical Context
The device implements fully registered synchronous I/O: all address, control, and data signals pass through input registers on CLK rising edge; outputs are latched on the same edge. Its NoBL™ logic eliminates bus latency by enabling true back-to-back read/write operations without wait states.
Write operations are controlled by WE and two byte-write selects (BWa, BWb), each governing one 18-bit data group (DQa/DQPa and DQb/DQPb). The internal burst counter advances on ADV/LD HIGH, while OE remains asynchronous for output tri-state control independent of clock phase.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 organization) |
| Max Clock Frequency | 200 MHz - enables 200 million transfers per second with zero wait states |
| Access Time | 3.0 ns - defines minimum clock-to-output delay for timing-critical pipeline stages |
| Supply Voltage | 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - supports mixed-voltage system interfacing |
| Byte Write Control | BWa and BWb - independently enable writes to two 18-bit data groups, reducing bus contention |
| Power Consumption | 500 mA max operating current - sets thermal budget for dense memory subsystems |
| Sleep Mode | ZZ pin - reduces standby current to ≤120 mA while preserving data integrity |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:17] | Synchronous Address Input | Sampled on CLK rising edge; selects one of 4M addresses in 18-bit word space |
| BWa, BWb | Synchronous Byte Write Select | Active LOW; BWa controls DQa/DQPa (18 bits), BWb controls DQb/DQPb (18 bits) |
| CLK | Synchronous Clock Input | Rising-edge-triggered; qualified by CEN - only recognized when CEN = LOW |
| CEN | Clock Enable | Active LOW; suspends clock recognition without deselecting chip, extending previous cycle |
| CE1, CE3 | Synchronous Chip Enable | Active LOW; combined with CE2 (active HIGH) for 3-signal bank selection logic |
| OE | Asynchronous Output Enable | Active LOW; forces I/O pins into output mode; masked during write data phase to prevent contention |
| ADV/LD | Advance/Load Control | HIGH advances internal burst counter; LOW loads new address - critical for burst sequence control |
| ZZ | Deep Sleep Control | Active LOW; places device in low-power state while retaining memory contents |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) Architecture | Enables unlimited consecutive read/write operations with no wait states - essential for packet buffering in line-rate switches |
| Fully Registered I/O | All inputs and outputs synchronized to CLK rising edge - simplifies timing closure in high-speed FPGA/ASIC interfaces |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write-pulse generation - reduces PCB routing complexity |
| IEEE 1149.1 JTAG Boundary Scan | Supports production test and debug of high-density memory interconnects without physical probe access |
| Burst Mode Flexibility | Configurable linear or interleaved burst order - matches legacy ZBT™ systems and modern cache-line fetch patterns |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packets in 10G Ethernet switch ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency data buffer between MAC and switching fabric, operating at 200 MHz with deterministic 3.0 ns output timing. Use Value: Eliminates pipeline stalls during back-to-back packet bursts, sustaining full line rate without FIFO overflow. |
Use Scenario: Frame buffering in multi-service provisioning platforms (MSPP) handling SONET/SDH and IP traffic. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as shared memory for traffic shaping engines, synchronized to system clock domain. Use Value: Byte-write select (BWa/BWb) allows partial updates of 18-bit subfields without disturbing adjacent header bytes. |
| Baseband Processing Cache | Radar Signal Processing Buffer |
|
Use Scenario: Temporary storage of OFDM symbol data in LTE eNodeB baseband units prior to FFT/IFFT processing. IC Role / Device Role / Timing Role: Burst-mode SRAM interfaced to DSP cores, leveraging ADV/LD to auto-increment addresses across symbol payloads. Use Value: Linear burst capability delivers contiguous 18-bit words at 200 MHz, matching symbol length requirements without software overhead. |
Use Scenario: Real-time buffering of ADC samples in phased-array radar front-ends before digital beamforming. IC Role / Device Role / Timing Role: Low-jitter, zero-wait-state memory staging data between high-speed ADC interface and FPGA-based correlators. Use Value: ZZ sleep mode reduces power during idle scan periods while preserving sampled data for rapid resumption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 2.5 V core supply; 165-ball FBGA only; 15 ns access time at 66 MHz | Limited to lower-frequency control-plane buffers; lacks NoBL™ back-to-back capability | Select when system uses 2.5 V logic and does not require >133 MHz throughput |
| ISSI IS61WV102418B | Asynchronous interface; no clock register; 10 ns access at 100 MHz; 100-pin TQFP | Suitable for simpler microcontroller co-processors but cannot sustain burst pipelines | Select for cost-sensitive, non-pipelined designs where timing margin exceeds 10 ns |
Compared with IDT72V2115L15PF and IS61WV102418B, CY7C1472BV33-200BZXC uniquely delivers 200 MHz zero-wait-state operation with full NoBL™ pipelining - making it the only option for sustained 3.6 Gbps data buffering in telecom and networking ASICs.
Availability
CY7C1472BV33-200BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing buffer applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1472BV33-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure.
CY7C1472BV33 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in packet-switched and real-time signal processing systems.
FAQ
What is the function of the ADV/LD pin in burst operations?
The ADV/LD pin controls the internal address counter: when HIGH and CEN is active, it increments the burst address automatically; when LOW, it loads a new starting address from A[17:0]. This dual-mode operation enables seamless transition between sequential burst reads and random-access reloads without external address generation logic.
How does the ZZ pin affect data retention and power consumption?
When ZZ is asserted LOW, the device enters deep sleep mode with standby current ≤120 mA while maintaining full data retention in the SRAM array. Power is restored within one clock cycle upon ZZ deassertion, with no initialization delay - critical for low-duty-cycle radar or burst-traffic applications.
Can CY7C1472BV33-200BZXC operate with 2.5 V I/O voltage while maintaining 3.3 V core supply?
Yes - VDDQ supports 2.5 V ±0.2 V operation independent of VDD (3.3 V ±0.3 V), allowing direct interfacing with 2.5 V FPGAs or ASICs without level shifters. All timing parameters in the datasheet are validated for both 3.3 V and 2.5 V VDDQ conditions.
Is the 100-pin TQFP package of CY7C1472BV33-200BZXC pin-compatible with CY7C1470BV33 variants?
No - although both use 100-pin TQFP, CY7C1470BV33 (2M × 36) has four byte-write inputs (BWa–BWd) and different DQ/DQP pin assignments, while CY7C1472BV33 (4M × 18) uses only BWa/BWb and allocates pins for its 18-bit-wide data path. Pin mapping differs in DQ group routing and BW signal count.
CY7C1472BV33-200BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1472BV33-200BZXC FAQ
1.How can I place an order for CY7C1472BV33-200BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1472BV33-200BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1472BV33-200BZXC reliable?
The price and inventory of CY7C1472BV33-200BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1472BV33-200BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1472BV33-200BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1472BV33-200BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1472BV33-200BZXC?
CY7C1472BV33-200BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1472BV33-200BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1472BV33-200BZXC?
For technical support, including CY7C1472BV33-200BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1472BV33-200BZXC requirements.
6.How does Aetrix verify that CY7C1472BV33-200BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1472BV33-200BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1472BV33-200BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1472BV33-200BZXC?
All CY7C1472BV33-200BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1472BV33-200BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1472BV33-200BZXC part is unused and in its original packaging.
Return procedure for CY7C1472BV33-200BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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