Cypress Semiconductor Corp CY7C1474BV25-167BGC

Overview

CY7C1474BV25-167BGC from Cypress Semiconductor is a 72-Mbit (1M × 72) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in network packet buffers, baseband processors, and FPGA co-processing interfaces. It operates at 167 MHz with 3.4 ns maximum clock-to-output delay, supports synchronous self-timed writes, byte write capability via eight BW pins (BWa–BWh), and uses a single 2.5V core supply with separate 2.5V I/O supply (VDDQ).

For engineers reviewing the CY7C1474BV25-167BGC datasheet, CY7C1474BV25-167BGC pinout, CY7C1474BV25-167BGC application, or CY7C1474BV25-167BGC equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), JTAG boundary-scan support, 209-ball FBGA package compatibility, and zero-wait-state pipelined read/write transitions in back-to-back memory access scenarios.

Technical Context

This SRAM implements fully registered synchronous operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. The internal NoBL™ logic eliminates bus latency by enabling true back-to-back reads or writes without wait states, using an on-chip burst counter controlled by ADV/LD and MODE.

Write operations are qualified by WE and eight independent byte-write enables (BWa–BWh), each controlling one 9-bit data/parity pair (DQx/DQP x). Output drivers are synchronously tri-stated during write data cycles and upon chip deselect, while OE provides asynchronous output enable control that is masked during critical timing windows.

Key Specifications

Pinout & Package

Package: 209-ball Fine-Pitch Ball Grid Array (FBGA), 14 mm × 22 mm × 1.76 mm body, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1472BV25-167BGC, this part offers wider 72-bit data path and finer byte-write granularity (8 vs. 2 BWs), but requires larger 209-ball FBGA; versus AS7C3256B-167JCIN, it delivers 4× higher effective bandwidth and deterministic timing, at cost of interface complexity.

Availability

CY7C1474BV25-167BGC is available at Aetrix Electronics and suitable for network infrastructure, wireless baseband, FPGA acceleration, and real-time video processing applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1474BV25-167BGC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems.

This device belongs to the NoBL™ SRAM product line, engineered specifically for zero-wait-state, pipelined memory subsystems in high-speed digital signal processing and packet-forwarding architectures.

FAQ

What is the function of the MODE pin on CY7C1474BV25-167BGC?

The MODE pin selects burst order: pulled HIGH for interleaved burst sequence, LOW for linear burst. It must be held static during operation and defaults to HIGH if left floating. This setting determines how the internal burst counter increments addresses during multi-word accesses, aligning with host processor burst addressing requirements.

How does the ADV/LD pin affect address loading in pipelined operation?

ADV/LD controls the internal address counter: when LOW at the rising CLK edge (with CEN active), it loads a new address from A0–A18; when HIGH, it advances the counter for the next burst word. After chip deselect, ADV/LD must be driven LOW before the next access to ensure correct address capture-failure causes invalid or repeated addresses.

Can CY7C1474BV25-167BGC operate with only two chip enables asserted?

No. All three chip enables-CE1 (active low), CE2 (active high), and CE3 (active low)-must be simultaneously asserted at the rising CLK edge to initiate any access. This triple-enable scheme prevents partial selection and ensures robust bank isolation in multi-SRAM systems, eliminating spurious reads/writes during signal skew.

Is the ZZ Sleep Mode supported on CY7C1474BV25-167BGC, and how is it enabled?

Yes, ZZ Sleep Mode is supported. Driving the ZZ pin LOW places the device in ultra-low-power sleep state, reducing standby current to ≤50 µA. During sleep, all inputs are ignored except ZZ itself; the device wakes on ZZ HIGH transition and requires two clock cycles before accepting new commands, preserving data integrity.