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Cypress Semiconductor Corp CY7C1480BV25-200BZC
- Part No.:
- CY7C1480BV25-200BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1480BV25-200BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:116
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Product details
Overview
CY7C1480BV25-200BZC from Cypress Semiconductor is a 72-Mbit (2M × 36) pipelined synchronous SRAM with 2.5 V core/I/O, 200 MHz operation (5 ns clock period), registered inputs/outputs, and JEDEC-standard Pb-free 100-pin TQFP packaging. It supports Intel Pentium®-compatible interleaved or linear burst sequences and delivers 3.0 ns clock-to-output time for high-speed cache applications in network processors and telecom line cards.
For engineers reviewing the CY7C1480BV25-200BZC datasheet, CY7C1480BV25-200BZC pinout, CY7C1480BV25-200BZC application, or CY7C1480BV25-200BZC equivalent, key selection criteria include synchronous burst timing control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWE + BWE), dual chip-enable architecture (CE1/CE2/CE3), and ZZ sleep mode with data retention.
Technical Context
The device implements a two-bit wraparound burst counter synchronized to CLK's rising edge, enabling automatic address increment during burst reads/writes. All synchronous inputs-including A[1:0], CE1/CE2/CE3, ADSP/ADSC, ADV, BWE, BWX, and GW-are registered on the same clock edge, ensuring deterministic setup/hold timing across 200 MHz operation.
Burst sequencing is user-selectable via the MODE pin, supporting either Pentium®-interleaved (0-2-1-3) or linear (0-1-2-3) address order. Write cycles are self-timed and synchronous, with global write (GW) overriding byte-write enables to write all 36 bits simultaneously-critical for cache line fills in RISC-based systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 72 Mbit (2M × 36 bits); supports full 36-bit parallel data path for L2 cache line width matching. |
| Max operating frequency | 200 MHz (5 ns clock period); enables 200 MT/s sustained throughput in pipelined bus architectures. |
| Access time (tCO) | 3.0 ns (clock-to-output); guarantees sub-5 ns read latency under worst-case 200 MHz timing conditions. |
| Supply voltage | 2.5 V core (VDD) and I/O (VDDQ); eliminates level-shifting requirements in 2.5 V system buses. |
| Burst capability | Four-word burst with selectable interleaved or linear sequence; matches Pentium® and PowerPC® cache protocols. |
| Byte write control | Eight independent byte write enables (BWA–BWH) + BWE gating; allows precise 8-bit, 16-bit, or 32-bit partial writes. |
| Sleep mode | ZZ pin active-HIGH sleep entry; reduces standby current to 120 mA while preserving memory contents. |
Pinout & Package
Package: 100-pin thin quad flat pack (TQFP), 14 × 20 × 1.4 mm, Pb-free, JEDEC-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Synchronous clock input | Rising-edge-triggered master clock; gates all registered inputs and advances burst counter when ADV is asserted. |
| ADSP / ADSC | Address strobe inputs | Separate processor/controller address capture signals; enable banked memory access without shared bus contention. |
| ADV | Burst advance control | Active-LOW signal that increments internal burst counter; enables fully synchronous burst address generation. |
| BWA–BWE, BWE | Byte write controls | Five dedicated byte write enables (BWA–BWE) gated by BWE; support granular 8-bit writes within 36-bit word. |
| CE1, CE2, CE3 | Chip enable hierarchy | Three-level synchronous chip select (CE1 active-LOW, CE2 active-HIGH, CE3 active-LOW); enables multi-bank decoding with minimal glue logic. |
| OE | Asynchronous output enable | Active-LOW tristate control; decouples output timing from clock domain for flexible bus arbitration. |
| ZZ | Asynchronous sleep control | Active-HIGH entry into low-power sleep mode; retains data with no clock required and no refresh overhead. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined synchronous interface | Registered address/data/control inputs eliminate external latch logic and reduce PCB trace skew sensitivity. |
| User-selectable burst mode | MODE pin configures interleaved (Pentium®) or linear burst order-no firmware reconfiguration needed. |
| Synchronous self-timed writes | On-chip write timing engine eliminates external write pulse generation; supports consistent 2-cycle write latency. |
| Dual-address strobe architecture | Independent ADSP and ADSC inputs allow concurrent CPU and DMA controller access without arbitration logic. |
| JTAG boundary scan (IEEE 1149.1) | Full scan chain enables production testability and board-level fault isolation without additional test points. |
Applications
| Network Processor Cache | Telecom Line Card Buffer |
|---|---|
|
Use Scenario: High-throughput packet classification and forwarding in 10Gbps+ line cards requiring deterministic latency. IC Role / Device Role / Timing Role: L2 cache buffer interfacing directly to network processor's 36-bit synchronous bus with burst-aligned reads. Use Value: 3.0 ns tCO and 200 MHz pipelining ensure sub-5 ns read response time, meeting hard real-time packet processing deadlines. |
Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers where burst-aligned data transfer minimizes jitter. IC Role / Device Role / Timing Role: Synchronous FIFO replacement with programmable burst depth and zero-wait-state access. Use Value: Interleaved burst mode matches OC-192 controller addressing, eliminating software address calculation overhead. |
| Baseband Processing Memory | RISC CPU Secondary Cache |
|
Use Scenario: Real-time digital signal processing in LTE eNodeB baseband units with strict memory bandwidth requirements. IC Role / Device Role / Timing Role: Shared memory resource between multiple DSP cores using CE2/CE3 for bank selection. Use Value: Eight-byte write enables (BWA–BWH) enable efficient 64-bit aligned writes from dual-issue DSP pipelines. |
Use Scenario: Secondary instruction/data cache for PowerPC® or ARM®-based industrial controllers running real-time OS. IC Role / Device Role / Timing Role: Pipelined SRAM acting as unified L2 cache with ZZ sleep mode for power-gated idle periods. Use Value: 120 mA CMOS standby current and ZZ sleep reduce system power by >65% during low-activity intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2125L15PF | 36-bit, 2M × 36, 15 ns access, 3.3 V I/O only; no ZZ sleep mode; supports linear burst only. | Lacks interleaved burst and sleep mode; requires level shifters in 2.5 V systems. | Select only if 3.3 V system compatibility and absence of sleep mode are acceptable. |
| ISSI IS61WV204836B | 2.5 V core/I/O, 200 MHz, but asynchronous interface; no pipelined registers or burst counter. | No ADSP/ADSC/ADV control; requires external sequencer for burst operations. | Choose only for cost-sensitive designs where synchronous timing control is not required. |
Compared with IDT72V2125L15PF and IS61WV204836B, CY7C1480BV25-200BZC uniquely combines 2.5 V operation, IEEE 1149.1 JTAG, ZZ sleep, and dual-strobe burst control-enabling drop-in integration into Pentium®-compatible and telecom-optimized platforms without redesign.
Availability
CY7C1480BV25-200BZC is available at Aetrix Electronics and suitable for network processor cache, telecom line card buffer, and RISC CPU secondary cache applications requiring stable component supply, long-lifecycle support, and Pb-free compliance.
Supply support for CY7C1480BV25-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
The CY7C1480BV25 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented cache and buffer applications in communications infrastructure equipment.
FAQ
What is the function of the MODE pin on CY7C1480BV25-200BZC?
The MODE pin selects burst address sequence: logic LOW configures linear burst (0-1-2-3), and logic HIGH selects interleaved burst (0-2-1-3) compatible with Intel Pentium® processors. It is sampled at power-up and latched internally; no runtime reconfiguration is supported. This pin eliminates need for external address remapping logic in legacy x86-compatible systems.
Can CY7C1480BV25-200BZC operate with mixed 2.5 V and 3.3 V interfaces?
No. The device requires strictly 2.5 V for both VDD (core) and VDDQ (I/O). Applying 3.3 V to any VDDQ pin exceeds absolute maximum ratings and risks permanent damage. Level translation is mandatory when interfacing with 3.3 V controllers; Cypress recommends using TI SN74AVC series or ON Semiconductor NTB010x translators.
How does the ZZ sleep mode affect timing behavior during wake-up?
When ZZ transitions from HIGH to LOW, the device exits sleep mode synchronously on the next CLK rising edge. No additional stabilization delay is required-the first valid access after wake-up completes with full 3.0 ns tCO specification. Data integrity is guaranteed throughout sleep, and no refresh or reinitialization is needed.
Is JTAG boundary scan functional when the device is in ZZ sleep mode?
No. JTAG operation is disabled during ZZ sleep mode. The TAP controller halts, and all scan registers retain their last state. Boundary scan functionality resumes only after ZZ returns LOW and at least one full CLK cycle elapses. For in-system test, ensure ZZ remains LOW during JTAG session execution.
CY7C1480BV25-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1480BV25-200BZC FAQ
1.How can I place an order for CY7C1480BV25-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1480BV25-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1480BV25-200BZC reliable?
The price and inventory of CY7C1480BV25-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1480BV25-200BZC is usually 5 days.
3.What payment methods are accepted for CY7C1480BV25-200BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1480BV25-200BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1480BV25-200BZC?
CY7C1480BV25-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1480BV25-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1480BV25-200BZC?
For technical support, including CY7C1480BV25-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1480BV25-200BZC requirements.
6.How does Aetrix verify that CY7C1480BV25-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1480BV25-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1480BV25-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1480BV25-200BZC?
All CY7C1480BV25-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1480BV25-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1480BV25-200BZC part is unused and in its original packaging.
Return procedure for CY7C1480BV25-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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