Cypress Semiconductor Corp CY7C1480BV33-167AXC

Overview

CY7C1480BV33 from Cypress Semiconductor is a 72-Mbit pipelined synchronous SRAM configured as 2M × 36, operating at 167 MHz with 3.3 V core and 2.5/3.3 V I/O supply, supporting Intel Pentium®-compatible interleaved or linear burst sequences in high-speed cache subsystems for embedded processors and networking controllers.

For engineers reviewing the CY7C1480BV33 datasheet, CY7C1480BV33 pinout, CY7C1480BV33 application, or CY7C1480BV33 equivalent, this device delivers deterministic 3.4 ns clock-to-output timing, registered address/data paths, synchronous self-timed writes, JTAG boundary scan, and selectable burst mode - critical for low-latency memory subsystem design in telecom baseband and industrial real-time control.

Technical Context

The CY7C1480BV33 implements a fully synchronous, pipelined architecture with all address, data, and control inputs registered on the rising edge of CLK. It integrates a 2-bit wraparound burst counter, dual address strobes (ADSP/ADSC), and asynchronous OE/ZZ controls to decouple timing-critical read cycles from bus arbitration overhead.

Burst addressing is advanced via the synchronous ADV signal, while byte write granularity is controlled by eight BWx inputs qualified by BWE and optionally overridden by GW. The device supports three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) for hierarchical memory banking and single-cycle chip deselect.

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 14 mm) and 165-ball FBGA (15 × 17 mm, 1.4 mm height). Pin functions are validated per Cypress Document #001-15145 Rev. *A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72V2115L16PF and ISSI IS61WV102436B, the CY7C1480BV33 uniquely combines 3.3 V core compatibility, hardware-configurable burst mode, integrated sleep control, and JTAG - enabling simpler power management and processor-agnostic burst support in space-constrained designs.

Availability

CY7C1480BV33 is available at Aetrix Electronics and suitable for network packet buffering, industrial motion controller cache, baseband digital front-end, and avionics display frame buffer applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1480BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.

The CY7C1480BV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic-latency cache and buffer applications in systems demanding sub-4 ns access and hardware-managed burst addressing.

FAQ

What is the minimum setup time requirement for ADSP relative to CLK?

The CY7C1480BV33 requires ADSP to be stable for at least 1.8 ns before the rising edge of CLK under 167 MHz operation, as specified in timing parameter tAS. This ensures reliable capture of address and control signals into internal registers without metastability risk. No external delay elements are needed if PCB trace lengths are matched within ±100 ps.

Can the MODE pin be changed dynamically during operation?

No - the MODE pin is sampled only at power-up reset and latched internally; it cannot be reconfigured during runtime. Changing burst sequence mid-operation requires a hardware reset or power cycle. This design ensures burst counter behavior remains predictable across all clock cycles without glitch-induced address misalignment.

How does ZZ sleep mode affect output drivers when OE is active?

When ZZ is asserted HIGH, all outputs enter high-impedance state regardless of OE status, and internal clocks halt. OE becomes irrelevant in sleep mode - no data can be read or written. Exiting sleep requires ZZ to return LOW for at least 200 ns before first valid access, per datasheet tZZD specification.

Is VDDQ required to be the same voltage as the host processor I/O?

Yes - VDDQ must match the voltage level of the connected bus (2.5 V or 3.3 V) to ensure signal integrity and avoid damage. Mixing VDDQ with incompatible host I/O voltages violates JEDEC JESD8-5 compliance and may cause excessive leakage or latch-up. VDDQ and VDD are electrically isolated power domains.