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Cypress Semiconductor Corp CY7C1481BV25-133AXI

Part No.:
CY7C1481BV25-133AXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1481BV25-133AXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:276

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Product details

Overview

CY7C1481BV25-133AXI from Infineon Technologies (formerly Cypress) is a 72-Mbit (2 M × 36) synchronous flow-through SRAM with 133 MHz bus operation, 6.5 ns clock-to-output delay, 2.5 V core/I/O supplies, and JEDEC-compliant 100-pin TQFP packaging. It serves as secondary cache memory in high-speed microprocessor systems requiring burst-mode access, supporting both Intel Pentium®-compatible interleaved and linear burst sequences via MODE pin selection.

For engineers reviewing the CY7C1481BV25-133AXI datasheet, CY7C1481BV25-133AXI pinout, CY7C1481BV25-133AXI application, or CY7C1481BV25-133AXI equivalent, key selection criteria include synchronous burst timing integrity, byte-selectable write capability, dual address strobe support (ADSP/ADSC), ZZ sleep mode power management, and compatibility with 2.5 V logic interfaces in embedded computing and networking subsystems.

Technical Context

The device implements a synchronous, clock-edge-triggered architecture where all address, control, and data inputs are registered on the rising edge of CLK. A 2-bit on-chip wraparound burst counter captures A[1:0] at burst initiation and auto-increments for subsequent accesses, enabling deterministic 4-word burst sequences.

Burst order (interleaved vs. linear) is statically selected by the MODE pin, with internal pull-up ensuring default interleaved behavior when floating. Address advancement is controlled by ADV, while chip selection uses three synchronized enables (CE1 active-low, CE2 active-high, CE3 active-low) and asynchronous OE for output tri-state control.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2 M × 36 bits) - supports full-word cache line storage for 32-bit+ processors with parity
Max Clock Frequency133 MHz - enables sustained 532 MB/s peak bandwidth in burst mode
Access Time (tCDV)6.5 ns - defines minimum clock-to-data-valid window for timing-critical read cycles
Supply VoltagesVDD = 2.5 V ±0.2 V, VDDQ = 2.5 V ±0.2 V - mandates separate low-noise 2.5 V rails for core and I/O domains
Burst SupportInterleaved or linear 4-word bursts - selectable via MODE pin to match Pentium/i486 or custom controller requirements
Write ControlByte-write (BWA–BWD + BWE) and global-write (GW) - enables precise 8-bit updates or full 36-bit writes without external gating logic
Sleep ModeAsynchronous ZZ input - reduces standby current to ≤120 mA while preserving data integrity during idle periods

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm, JEDEC-standard Pb-free, with exposed thermal pad (not electrically connected).

Pin/TerminalCircuit RoleDesign Meaning
CLKClock InputRising-edge synchronous reference for all register captures and burst counter advancement
ADSP / ADSCAddress Strobe InputsPriority-controlled (ADSP > ADSC) synchronous signals initiating address latching and burst start
ADVAddress AdvanceControls automatic increment of internal burst counter on each active clock edge during burst sequence
MODEBurst Order SelectStatic strap pin determining interleaved (HIGH) or linear (LOW) burst addressing pattern
ZZAsynchronous Sleep EnableHigh-active signal placing SRAM in low-power retention state without clock dependency
DQs / DQPXBidirectional Data I/O36 data + 4 parity lines operating as common I/O with OE-controlled direction and automatic tri-state during writes

Key Features

FeatureDesign Value
Synchronous self-timed writeEliminates need for external write pulse generation - internal timing ensures reliable data capture across voltage/temperature
Separate processor/controller address strobesEnables dual-bus architectures (e.g., CPU + cache controller) without arbitration logic or timing conflict
User-selectable burst sequenceHardware-mode pin allows board-level configuration for Pentium-compatible or linear burst protocols without firmware change
IEEE 1149.1 JTAG boundary scanSupports in-system testability and interconnect verification in dense PCB layouts with minimal test point overhead
2.5 V core + I/O supply separationReduces switching noise coupling between memory array and interface circuitry, improving signal integrity at 133 MHz

Applications

Processor Cache SubsystemNetwork Packet Buffer

Use Scenario: Secondary cache for x86-compatible CPUs requiring burst-mode memory access with low latency.

IC Role / Device Role / Timing Role: Flow-through SRAM acting as L2 cache buffer, interfacing directly with Pentium-class address/data buses using ADSP/ADV protocol.

Use Value: 6.5 ns tCDV and 133 MHz operation enable sub-8 ns effective read cycle time, matching CPU pipeline depth without wait states.

Use Scenario: Temporary storage for variable-length Ethernet or ATM frames in switch fabric ASIC support logic.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet staging buffer with byte-selectable writes for header modification and payload alignment.

Use Value: Independent BWA–BWD controls allow in-place 8-bit field edits (e.g., TTL decrement, checksum update) without full-word rewrite overhead.

Industrial Motion Controller MemoryAvionics Data Acquisition Buffer

Use Scenario: Real-time trajectory lookup table storage in servo drive controllers with deterministic timing constraints.

IC Role / Device Role / Timing Role: Synchronous SRAM providing jitter-free access to precomputed motion profiles via linear burst reads aligned to position loop timing.

Use Value: MODE pin hardwired LOW enables predictable linear addressing, eliminating burst-order ambiguity in safety-critical motion sequencing.

Use Scenario: Buffered acquisition of sensor telemetry (e.g., ADC samples, IMU data) in DO-254-compliant flight control modules.

IC Role / Device Role / Timing Role: Radiation-tolerant-capable memory buffer with ZZ sleep mode for power-gated data capture intervals between sampling windows.

Use Value: Asynchronous ZZ entry/exit allows rapid power cycling synchronized to sensor sampling triggers, reducing average current to ≤120 mA during idle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV102436BLL-133BLI1024K × 36 organization, same 133 MHz speed, but 3.3 V I/O (VDDQ = 3.3 V), no ZZ sleep modeLacks low-power sleep capability; requires level-shifting for 2.5 V systemsSelect only if system already uses 3.3 V I/O rails and sleep mode is unused
MT55LSD25636DZ-133:J256K × 36 density, 133 MHz, 2.5 V core/I/O, but asynchronous OE-only output control (no ADSP/ADSC)Does not support dual-address-strobe burst initiation; limited to single-controller topologiesChoose only for simpler, single-master designs where ADSC functionality is unnecessary

Compared with IS61WV102436BLL-133BLI and MT55LSD25636DZ-133:J, CY7C1481BV25-133AXI uniquely combines 2 M × 36 density, 2.5 V compatibility, ZZ sleep, and dual-address-strobe burst control-making it irreplaceable in legacy Pentium-based or multi-controller cache architectures requiring full feature parity.

Availability

CY7C1481BV25-133AXI is available at Aetrix Electronics and suitable for processor cache subsystems, network packet buffering, and industrial motion controller memory requiring stable component supply and long-term obsolescence mitigation.

Supply support for CY7C1481BV25-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, formed through the acquisition of Cypress Semiconductor in 2020.

This device belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for high-performance, low-latency cache and buffering applications in compute-intensive embedded and communications platforms.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst addressing order: HIGH (or floating, due to internal pull-up) enables Intel Pentium®-compatible interleaved bursts; LOW (tied to GND) selects linear bursts. It is a static strap pin-must remain stable during operation and cannot be toggled dynamically. Incorrect configuration causes misaligned burst reads/writes and data corruption.

Can CY7C1481BV25-133AXI operate with mixed 2.5 V and 3.3 V interfaces?

No. The device requires strictly 2.5 V ±0.2 V on both VDD (core) and VDDQ (I/O). Applying 3.3 V to VDDQ exceeds absolute maximum ratings and risks permanent damage. Level-shifting circuitry is mandatory when interfacing with 3.3 V controllers or FPGAs.

How does the ZZ sleep mode interact with ongoing burst operations?

Asserting ZZ HIGH during an active burst terminates the sequence immediately and places the device in low-power retention. No data is lost, but incomplete bursts are abandoned. The device resumes normal operation within tZZD (≤50 ns) after ZZ returns LOW, with no reset or reinitialization required.

Is JTAG boundary scan supported in all operating modes?

Yes. IEEE 1149.1 JTAG functionality remains fully operational in active, standby, and ZZ sleep modes. TCK, TMS, TDI, and TDO pins retain their scan capabilities regardless of CE, OE, or ZZ state-enabling in-system test coverage across all power states.

CY7C1481BV25-133AXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1481BV25-133AXI FAQ

1.How can I place an order for CY7C1481BV25-133AXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1481BV25-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1481BV25-133AXI reliable?

The price and inventory of CY7C1481BV25-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1481BV25-133AXI is usually 5 days.

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CY7C1481BV25-133AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1481BV25-133AXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1481BV25-133AXI?

For technical support, including CY7C1481BV25-133AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1481BV25-133AXI requirements.

6.How does Aetrix verify that CY7C1481BV25-133AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1481BV25-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1481BV25-133AXI meets industry standards.

7.What is the process for return or replacement of CY7C1481BV25-133AXI?

All CY7C1481BV25-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1481BV25-133AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1481BV25-133AXI part is unused and in its original packaging.

Return procedure for CY7C1481BV25-133AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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