Cypress Semiconductor Corp CY7C1481BV33-133BZI

Overview

CY7C1481BV33-133BZI from Infineon Technologies (formerly Cypress) is a 72-Mbit (2M × 36) synchronous flow-through SRAM with 133 MHz bus operation, 6.5 ns clock-to-output delay, 3.3 V core supply (VDD), 2.5/3.3 V I/O supply (VDDQ), and JEDEC-compliant interface - designed for high-speed secondary cache in Pentium-class microprocessor systems.

For engineers reviewing the CY7C1481BV33-133BZI datasheet, CY7C1481BV33-133BZI pinout, CY7C1481BV33-133BZI application, or CY7C1481BV33-133BZI equivalent, key selection criteria include burst mode configuration (linear vs. interleaved), synchronous address strobe support (ADSP/ADSC), byte-write granularity (BWA–BWD + BWE), ZZ sleep mode, and JTAG boundary-scan compatibility for system-level testability.

Technical Context

The device implements a synchronous, flow-through architecture with a 2-bit on-chip wraparound burst counter that latches A[1:0] at the rising edge of CLK when ADSP or ADSC is asserted, then auto-increments addresses per ADV assertion. All address, control, and data inputs are registered on CLK's positive edge, while OE and ZZ remain asynchronous.

It supports dual-burst sequencing via MODE pin (interleaved for Intel Pentium/i486™, linear for other processors), synchronous self-timed write with global write (GW) override, and separate processor/controller address strobes to decouple CPU and cache controller timing domains - enabling deterministic 2-1-1-1 access rate in burst cycles.

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 119-ball BGA packages. Pin functions are validated per Cypress document 001-74857 Rev. *J (pages 4–6). TQFP excludes JTAG pins (TDO/TDI/TMS/TCK); BGA includes full boundary-scan capability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with AS7C362000B-133BIN and IS61WV204836BLL-133TQLI, the CY7C1481BV33-133BZI uniquely delivers native interleaved burst support, dual address strobes, and integrated ZZ sleep - making it the only drop-in solution for legacy Pentium-based cache designs requiring zero timing margin compromise.

Availability

CY7C1481BV33-133BZI is available at Aetrix Electronics and suitable for Intel Pentium-based cache subsystems, industrial real-time controllers, communications baseband buffers, and avionics data acquisition modules requiring stable component supply across extended product lifecycles.

Supply support for CY7C1481BV33-133BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the former Cypress SRAM portfolio.

This device belongs to the CY7C14xxBV33 synchronous SRAM family, engineered specifically for high-performance, low-latency secondary cache applications in x86-compatible and real-time embedded systems.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst sequence type: HIGH (or floating, due to internal pull-up) enables interleaved burst for Intel Pentium/i486™ compatibility; LOW (tied to GND) selects linear burst. It is a static strap pin - configuration must be fixed at power-up and cannot change during operation. Incorrect or floating MODE in interleaved systems causes address misalignment and data corruption.

Does CY7C1481BV33-133BZI support both 2.5 V and 3.3 V I/O interfaces simultaneously?

No - VDDQ is a single supply pin accepting either 2.5 V or 3.3 V, not both. The selected voltage must be stable and match the I/O domain of the connected processor or controller. Mixing voltages on VDDQ violates absolute maximum ratings and risks latch-up. VDD remains fixed at 3.3 V regardless of VDDQ choice.

How does the ZZ sleep mode interact with ongoing burst operations?

Asserting ZZ HIGH immediately places the device in sleep mode, halting all internal timing and disabling outputs, but preserves data in the memory array. If asserted mid-burst, the current burst terminates abnormally - no further words are output or written. Recovery requires deasserting ZZ and waiting t_ZZ (100 ns min) before issuing new commands. Sleep mode does not affect data retention time (guaranteed > 20 years at 25°C).

Is JTAG boundary scan available on the 100-pin TQFP package?

No - JTAG signals (TDO, TDI, TMS, TCK) are omitted from the 100-pin TQFP package per datasheet page 5, Note 1. Only the 119-ball BGA variant includes full IEEE 1149.1 boundary-scan capability. Systems requiring JTAG test must select the BGA version and route all four TAP signals with controlled impedance.