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Cypress Semiconductor Corp CY7C1484BV25-250AXI

Part No.:
CY7C1484BV25-250AXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1484BV25-250AXI.pdf
Description:
IC SRAM 72MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:198

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Product details

Overview

CY7C1484BV25-250AXI from Cypress Semiconductor is a 72-Mbit (2 M × 36) pipelined DCD synchronous SRAM with registered inputs/outputs, 250 MHz bus operation support, 3.0 ns clock-to-output time, 2.5 V core (VDD) and I/O (VDDQ) supplies, and user-selectable Intel Pentium®-compatible or linear burst sequences - optimized for high-performance secondary cache in x86-based embedded and computing systems.

For engineers reviewing the CY7C1484BV25-250AXI datasheet, CY7C1484BV25-250AXI pinout, CY7C1484BV25-250AXI application, or CY7C1484BV25-250AXI equivalent, key selection considerations include synchronous burst timing control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE/GW), double-cycle deselect behavior, and JEDEC-standard 100-pin TQFP packaging with separate VDDQ/VSSQ for I/O noise isolation.

Technical Context

The device implements a 2-bit synchronous wraparound burst counter fed by A[1:0], with burst order selected statically via the MODE pin (GND = linear; VDD/floating = interleaved). All address, data, and control inputs except OE and ZZ are registered on the rising edge of CLK, enabling precise pipelined timing at 250 MHz.

It supports dual-address-strobe operation (ADSP for processor-initiated, ADSC for controller-initiated accesses), asynchronous OE-driven output tri-state control, and ZZ-enabled low-power sleep mode with data retention. Write cycles are self-timed and support both global (GW) and byte-selectable (BWX + BWE) writes across four 9-bit data groups (DQA–DQD with DQPA–DQPD parity).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2 M × 36 bits), enabling 9 MB of cache storage per device in 36-bit wide systems.
Max Clock Frequency 250 MHz - defines maximum sustained bus throughput of 9 Gbps (36-bit × 250 MHz).
Access Time (tCO) 3.0 ns - clock-to-output delay under 250 MHz operation, critical for meeting tight cache read timing budgets.
Core/I/O Voltage VDD = 2.5 V ± 0.2 V, VDDQ = 2.5 V ± 0.2 V - mandates separate low-noise 2.5 V supplies for core logic and I/O drivers.
Burst Mode Control MODE pin selects interleaved (Pentium®/i486™) or linear burst sequence - determines address increment pattern during burst reads/writes.
Write Enable Logic Separate GW (global write) and BWE + BWx (byte write enable/select) signals - enables selective 1–4 byte writes without disturbing adjacent bytes.
Deselect Behavior Double-cycle deselect - output buffers remain active one additional clock cycle after chip disable, eliminating wait states in depth-expanded configurations.

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm, JEDEC-standard Pb-free, with dedicated VDDQ/VSSQ pins for I/O power integrity and separate VDD/VSS for core logic.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master clock for all registered inputs/outputs and burst counter increment.
ADSP / ADSC Address strobe (processor/controller) Edge-sensitive enable for address capture; ADSP takes priority when both asserted - supports dual-bus system partitioning.
ADV Burst address advance Active-low signal that increments internal 2-bit burst counter on next CLK edge - controls sequential address generation.
BWA–BWD, BWE, GW Byte write control Four independent byte-enable lines + byte-write enable + global write override - enables flexible 1–4 byte write granularity per cycle.
DQA–DQD, DQPA–DQPD Data I/O (36-bit + 4 parity) Common I/O bidirectional bus with OE-controlled direction; DQPx provide optional parity for ECC-capable systems.
CE1, CE2, CE3 Chip enable hierarchy Three-level synchronous chip select (CE1 active-low, CE2 active-high, CE3 active-low) - enables bank decoding without external logic.
OE Asynchronous output enable Active-low tri-state control for DQ/DQP outputs - overrides synchronous timing for dynamic bus sharing.
ZZ Asynchronous sleep mode Active-high entry into low-power retention mode; internal pull-down ensures safe default LOW state.

Key Features

Feature Design Value
Pipelined DCD architecture Registered address/data/control paths reduce setup/hold timing constraints and enable stable 250 MHz operation in high-speed PCB layouts.
Double-cycle deselect Eliminates wait states during depth expansion by delaying output tri-state until second clock after deselect - preserves full bandwidth in multi-SRAM banks.
User-selectable burst mode MODE pin configures interleaved (Pentium®) or linear burst addressing - matches host processor's cache line access pattern without firmware modification.
Synchronous self-timed writes On-chip write sequencing removes external write pulse timing constraints - simplifies controller design and improves write reliability across voltage/temperature.
Separate VDDQ/VSSQ supply Isolates I/O switching noise from core logic, reducing ground bounce and improving signal integrity for 250 MHz data transfers.

Applications

Intel Pentium®-Based Cache Subsystem Industrial Real-Time Controller Memory

Use Scenario: Secondary cache in legacy x86 industrial PCs requiring compatibility with Pentium® burst protocols.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as L2 cache buffer with interleaved burst addressing and ADSP-driven processor interface.

Use Value: 3.0 ns tCO and 250 MHz clock rate meet Pentium® P54C/P55C timing requirements while supporting 2 M × 36 data width for full cache line storage.

Use Scenario: Deterministic memory buffer in motion-control PLCs where predictable access latency and burst coherency are required.

IC Role / Device Role / Timing Role: High-reliability synchronous SRAM providing zero-wait-state data buffering between FPGA-based sequencer and analog I/O modules.

Use Value: Double-cycle deselect prevents pipeline stalls during rapid bank switching; ZZ sleep mode reduces idle power to <120 mA CMOS standby current.

Communications Packet Buffer Avionics Data Acquisition Module

Use Scenario: Line-rate packet buffering in telecom baseband processors handling TDMA frame bursts.

IC Role / Device Role / Timing Role: Burst-mode SRAM storing up to 2 M × 36 bits of frame-aligned payload with ADV-driven sequential reads.

Use Value: Linear burst mode (MODE = GND) delivers contiguous 36-bit word streams matching TDMA slot structure; 2.5 V VDDQ ensures clean signal integrity on dense backplanes.

Use Scenario: Radiation-tolerant memory buffer in flight data recorders interfacing with ARINC 429 receivers.

IC Role / Device Role / Timing Role: Synchronous SRAM with parity (DQPA–DQPD) providing error-detectable storage for critical sensor telemetry.

Use Value: Byte-write capability (BWA–BWD + BWE) allows selective update of individual parameter fields without full-line rewrite; CE2/CE3 hierarchy supports redundant memory mapping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102436B 1024K × 36, 2.5 V, 200 MHz max, 3.5 ns tCO, no ZZ sleep mode, same 100-pin TQFP package. Lacks ZZ sleep and ADV-controlled burst advance; supports only linear burst (no MODE-selectable interleaved mode). Select when lower cost and 200 MHz performance suffice, and Pentium®-interleaved burst is not required.
Micron MT55LSD12836BG 128K × 36, 3.3 V core/I/O, 166 MHz, 4.5 ns tCO, supports interleaved burst but no ADSP/ADSC dual-strobe interface. Lower density, higher voltage, slower speed; lacks processor/controller address strobe separation and double-cycle deselect. Choose only for legacy 3.3 V systems where dual-strobe timing and 250 MHz operation are unnecessary.

Compared with IS61WV102436B and MT55LSD12836BG, CY7C1484BV25-250AXI uniquely delivers 250 MHz operation with Pentium®-compatible interleaved burst, double-cycle deselect for seamless depth expansion, and dedicated ZZ sleep - making it irreplaceable in high-throughput, low-latency x86 cache and deterministic industrial control designs.

Availability

CY7C1484BV25-250AXI is available at Aetrix Electronics and suitable for Intel Pentium®-based cache subsystems, industrial real-time controllers, communications packet buffers, and avionics data acquisition modules requiring stable component supply, long-lifecycle support, and JEDEC-compliant 100-pin TQFP packaging.

Supply support for CY7C1484BV25-250AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and computing markets.

CY7C1484BV25 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented cache and buffer applications in x86-compatible and deterministic real-time systems.

FAQ

What is the function of the MODE pin on CY7C1484BV25-250AXI?

The MODE pin statically selects the burst address sequence: tied to GND enables linear burst (sequential A[1:0] increment), while tied to VDD or left floating enables interleaved burst (Pentium®-compatible 0-2-1-3 pattern). It must remain static during operation and is sampled only at power-up or reset - no runtime reconfiguration is supported.

How does double-cycle deselect improve system performance?

Double-cycle deselect delays output tri-state by one additional clock cycle after chip disable (CE1/CE2/CE3 deassertion), allowing consecutive accesses across multiple SRAM devices in depth-expanded configurations to proceed without wait states. This maintains full 250 MHz bandwidth even when switching between banks.

Can CY7C1484BV25-250AXI operate with mixed 2.5 V and 3.3 V interfaces?

No - the device requires strictly 2.5 V ± 0.2 V for both VDD (core) and VDDQ (I/O). Applying 3.3 V to any supply pin exceeds absolute maximum ratings and risks permanent damage. Level-shifting circuitry is required for interfacing with 3.3 V controllers or FPGAs.

What is the role of ADSP versus ADSC in system design?

ADSP (Address Strobe Processor) and ADSC (Address Strobe Controller) provide independent, priority-resolved address capture paths: ADSP has higher priority and is used for CPU-initiated accesses; ADSC is for DMA or peripheral controller use. This enables clean separation of processor and bus-master traffic in multi-master systems without arbitration logic.

CY7C1484BV25-250AXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1484BV25-250AXI FAQ

1.How can I place an order for CY7C1484BV25-250AXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1484BV25-250AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1484BV25-250AXI reliable?

The price and inventory of CY7C1484BV25-250AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1484BV25-250AXI is usually 5 days.

3.What payment methods are accepted for CY7C1484BV25-250AXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1484BV25-250AXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1484BV25-250AXI?

CY7C1484BV25-250AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1484BV25-250AXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1484BV25-250AXI?

For technical support, including CY7C1484BV25-250AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1484BV25-250AXI requirements.

6.How does Aetrix verify that CY7C1484BV25-250AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1484BV25-250AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1484BV25-250AXI meets industry standards.

7.What is the process for return or replacement of CY7C1484BV25-250AXI?

All CY7C1484BV25-250AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1484BV25-250AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1484BV25-250AXI part is unused and in its original packaging.

Return procedure for CY7C1484BV25-250AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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