Cypress Semiconductor Corp CY7C1484BV33-250BZXC

Overview

CY7C1484BV33-250BZXC from Cypress Semiconductor is a 72-Mbit (2 M × 36) pipelined, double-cycle-deselect synchronous SRAM with registered inputs/outputs, 250 MHz bus operation, 3.0 ns clock-to-output time, and support for Intel Pentium®-compatible interleaved or linear burst sequences. It operates with 3.3 V core (VDD) and 2.5/3.3 V I/O (VDDQ), features IEEE 1149.1 JTAG boundary scan, and is used in high-performance secondary cache subsystems for x86-compatible processors.

For engineers reviewing the CY7C1484BV33-250BZXC datasheet, CY7C1484BV33-250BZXC pinout, CY7C1484BV33-250BZXC application, or CY7C1484BV33-250BZXC equivalent, key selection criteria include synchronous burst timing compliance, depth-expansion capability without wait states, byte-write granularity control via BWx/BWE/GW, ZZ sleep mode behavior, and FBGA-165 package thermal and routing constraints.

Technical Context

The device implements a 2-bit synchronous wraparound burst counter, with address strobes ADSP (processor) and ADSC (controller) enabling dual-source address capture on CLK rising edge. Burst sequencing-interleaved (MODE = VDD/floating) or linear (MODE = GND)-is statically selected and maintained during operation.

All synchronous inputs (A[1:0], CE1–CE3, ADSP/ADSC, ADV, BWA–BWD, BWE, GW, CLK) are registered on CLK rising edge; OE and ZZ are asynchronous. Output enable masking during first read cycle after deselect and pipelined output buffer disable (double-cycle deselect) ensure deterministic timing in depth-expanded memory banks.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61WV102436BLL-250TQLI and W9825G6JH-25, CY7C1484BV33-250BZXC uniquely combines 3.3 V core + dual-voltage I/O, hardware-configurable burst mode, ZZ sleep, and double-cycle deselect - essential for deterministic cache and real-time buffer designs where timing predictability and power control are mandatory.

Availability

CY7C1484BV33-250BZXC is available at Aetrix Electronics and suitable for Intel Pentium®-based embedded computing, industrial motion control systems, and avionics data acquisition requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1484BV33-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions.

The CY7C1484BV33 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency cache and buffer applications in x86-compatible and real-time embedded systems.

FAQ

What is the function of the MODE pin, and how must it be connected?

The MODE pin statically selects burst address sequence: tied to GND for linear burst (monotonic addressing), or to VDD/floating for interleaved burst (Pentium®-compatible). It is a strap pin - must remain static during operation and cannot be toggled dynamically. Internal pull-up ensures safe default to interleaved mode if left floating.

Does CY7C1484BV33-250BZXC support true 250 MHz operation with zero wait states?

Yes - the device guarantees 250 MHz bus operation with 3.0 ns clock-to-output (tCO) and supports depth expansion without wait states due to its double-cycle deselect architecture and pipelined enable register. This enables concurrent access across multiple devices in a bank without timing penalty.

How does the ZZ sleep mode affect data retention and wake-up timing?

When ZZ is driven HIGH, the device enters a non-time-critical sleep mode with full data retention. Core power (VDD) remains active; only I/O and peripheral circuitry are gated. Wake-up is immediate upon ZZ return to LOW - no stabilization delay is required, and the next valid access proceeds normally on the subsequent CLK edge.

Can BWA–BWD and BWE be used to perform partial writes without asserting GW?

Yes - BWE must be asserted LOW along with exactly one of BWA–BWD to write only the corresponding 9-bit byte. If BWE is HIGH, no byte writes occur regardless of BWx state. GW overrides all byte controls: when GW is LOW, all four bytes (36 bits) are written simultaneously, ignoring BWx and BWE values.