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Cypress Semiconductor Corp CY7C1512AV18-167BZXI

Part No.:
CY7C1512AV18-167BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512AV18-167BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:241

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Product details

Overview

CY7C1512AV18-167BZXI from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 167 MHz maximum operating frequency, 1.5-cycle read latency (DLL enabled), and HSTL I/O interface. It delivers 500 MT/s effective data rate via DDR interfaces on both ports and is packaged in a 165-ball FBGA (15 × 17 × 1.4 mm) for high-speed networking buffer applications.

For engineers reviewing the CY7C1512AV18-167BZXI datasheet, CY7C1512AV18-167BZXI pinout, CY7C1512AV18-167BZXI application, or CY7C1512AV18-167BZXI equivalent, key selection criteria include burst timing alignment, echo clock (CQ/CQ) support for source-synchronous capture, DLL-enabled latency mode, byte write select (BWS0/BWS1) granularity, and VDDQ = 1.4V–1.8V I/O voltage compatibility.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined architecture with separate K/K input clocks for address/data capture and C/C output clocks for data launch - enabling precise DDR timing without bus turnaround. Its internal 2-array organization (2 × 2M × 18) supports concurrent read and write operations on shared address bus with no contention.

The device uses on-chip Delay Lock Loop (DLL) to align CQ/CQ echo clocks with output data edges, reducing setup/hold margin requirements at 167 MHz. When DOFF = LOW, it reverts to QDR I mode with 1-cycle latency and relaxed timing, retaining full pin and functional compatibility.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 4M × 18 (72 Mbit); two 2M × 18 arrays enable depth expansion with RPS/WPS control
Max Clock Frequency 167 MHz K/K input clock; supports 334 MT/s (2-word burst × 167 MHz)
Data Rate 500 MT/s effective (DDR on both ports: 2 × 167 MHz transfers per cycle)
Read Latency 1.5 cycles with DLL enabled (DOFF = HIGH); 1 cycle with DLL disabled (DOFF = LOW)
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O); VREF referenced for HSTL compliance
Package 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, Pb-free option available
Interface Standard HSTL Class I inputs/outputs; ZQ pin enables dynamic output impedance tuning to system bus (0.2 × RQ)

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edges of K (low word) and K (high word); supports 2-word burst writes
Q[17:0] Synchronous read data outputs Driven on rising edges of C/C; tristated automatically after burst completion when RPS deasserted
RPS / WPS Active-low port select controls Enable independent read/write initiation; allow depth expansion without external logic
BWS0, BWS1 Byte write select inputs Control D[8:0] and D[17:9] independently; enable partial-word writes without read-modify-write overhead
C, C / CQ, CQ Output timing and echo clocks C/C launch Q[17:0]; CQ/CQ track C/C edges with minimal skew - simplify controller capture timing
K, K Input clock pair Sample all synchronous inputs (A, D, RPS, WPS, BWS); define pipeline stages for address/data registration
DOFF DLL enable/disable control Pull HIGH for QDR II mode (1.5-cycle latency); tie LOW for backward-compatible QDR I operation at same pinout
ZQ Output impedance calibration input Connect to resistor-to-ground (RQ) to set Q/CQ output impedance to 0.2 × RQ; or tie to VDDQ for min-impedance mode

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround delay and arbitration logic; enables true concurrent access in packet buffering
Echo clock (CQ/CQ) support Provides source-synchronous timing reference for FPGA/ASIC controllers - reduces PCB routing skew sensitivity
Programmable DLL mode DOFF pin allows field-selectable 1.5-cycle (QDR II) or 1-cycle (QDR I) latency - simplifies migration and timing closure
HSTL Class I I/O Ensures signal integrity at 500 MT/s; ZQ calibration maintains consistent drive strength across voltage/temperature
Byte write select (BWS0/BWS1) Enables 9-bit granularity writes without external masking logic - critical for header/payload editing in switch fabrics

Applications

High-Speed Network Switch Buffer Packet Classification Engine Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches operating at 10 Gbps+ line rates.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as first-level packet buffer with zero-wait-state concurrent read (lookup) and write (ingest).

Use Value: 2-word burst + DDR I/O delivers 500 MT/s bandwidth; echo clocks (CQ/CQ) enable reliable capture in Xilinx Ultrascale+ GTY transceivers.

Use Scenario: Accelerating TCAM-like parallel lookups in deep packet inspection engines using hash-based memory indexing.

IC Role / Device Role / Timing Role: High-throughput memory array feeding parallel match logic; RPS/WPS isolation prevents read/write collision during update cycles.

Use Value: 1.5-cycle latency with DLL ensures deterministic timing margin; BWS0/BWS1 allows atomic 9-bit rule-field updates without full-word rewrite.

Baseband Digital Front-End Buffer PCIe Gen3 Endpoint Descriptor Cache

Use Scenario: Interfacing between RF digital up/down converters and FPGA-based channelizers in LTE/5G massive MIMO base stations.

IC Role / Device Role / Timing Role: Synchronous burst memory bridging ADC/DAC sample streams and FFT processing pipelines.

Use Value: K/K and C/C clock separation accommodates FPGA clock domain crossing; VDDQ = 1.4V matches low-power SerDes I/O standards.

Use Scenario: Caching PCIe transaction layer packets (TLPs) and completion descriptors in high-performance storage controllers.

IC Role / Device Role / Timing Role: Low-latency descriptor store accessed by root complex and endpoint logic simultaneously.

Use Value: 165-ball FBGA footprint fits dense PCIe add-in card layouts; JTAG (TCK/TMS/TDI/TDO) supports in-system debug and boundary scan validation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102418B Asynchronous, 1024K × 18, 3.3V core/I/O, no DDR or echo clocks Limited to ≤100 MHz random access; unsuitable for QDR-timed burst systems Select only for cost-sensitive, non-burst, low-frequency buffering where timing predictability is secondary
Micron MT47H64M16HR DDR2 SDRAM, 64M × 16, 400 MHz data rate, requires refresh and command sequencing Higher density but adds controller complexity; lacks true dual-port concurrency Prefer for large-capacity, lower-bandwidth buffers where DRAM refresh tolerance is acceptable

Compared with IS61WV102418B and MT47H64M16HR, CY7C1512AV18-167BZXI uniquely delivers deterministic 167 MHz burst throughput with zero-refresh, no-command overhead, and hardware-managed read/write independence - essential for real-time packet processing pipelines.

Availability

CY7C1512AV18-167BZXI is available at Aetrix Electronics and suitable for high-speed network switch buffers, packet classification engines, baseband digital front-end buffers, and PCIe Gen3 descriptor caches requiring stable component supply across multi-year production cycles.

Supply support for CY7C1512AV18-167BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with focus on signal integrity and timing-critical applications.

CY7C1512AV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking ASICs, FPGAs, and protocol accelerators.

FAQ

What is the function of the DOFF pin on CY7C1512AV18-167BZXI?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and relaxed timing specifications, maintaining full pin and functional compatibility. For standard QDR II operation at 167 MHz with 1.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up to VDDQ.

How does the ZQ pin affect output drive strength?

The ZQ pin calibrates the output driver impedance of Q[17:0], CQ, and CQ pins to match the system data bus. Connecting ZQ to a resistor (RQ) to ground sets output impedance to 0.2 × RQ. Alternatively, tying ZQ directly to VDDQ enables minimum-impedance mode. ZQ must never be left floating or tied to VSS, as this disables calibration and risks signal integrity failure.

Can CY7C1512AV18-167BZXI operate with only one clock pair?

Yes - the device supports single-clock mode using only K/K for both input registration and output timing. In this mode, Q[17:0] data is launched on K/K edges instead of C/C, and CQ/CQ are generated relative to K/K. This simplifies clock distribution but sacrifices the deskewing benefit of dedicated output clocks and may reduce timing margin at 167 MHz.

What is the role of BWS0 and BWS1 in write operations?

BWS0 and BWS1 are active-low byte write selects that control which 9-bit segments of D[17:0] are written during each 2-word burst. BWS0 governs D[8:0], BWS1 governs D[17:9]. When either is deasserted, the corresponding byte remains unaltered - enabling efficient partial-word updates (e.g., modifying packet headers without rewriting payload) without external read-modify-write logic.

CY7C1512AV18-167BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1512AV18-167BZXI FAQ

1.How can I place an order for CY7C1512AV18-167BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512AV18-167BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512AV18-167BZXI reliable?

The price and inventory of CY7C1512AV18-167BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-167BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1512AV18-167BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512AV18-167BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512AV18-167BZXI?

CY7C1512AV18-167BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512AV18-167BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512AV18-167BZXI?

For technical support, including CY7C1512AV18-167BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-167BZXI requirements.

6.How does Aetrix verify that CY7C1512AV18-167BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1512AV18-167BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-167BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1512AV18-167BZXI?

All CY7C1512AV18-167BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-167BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512AV18-167BZXI part is unused and in its original packaging.

Return procedure for CY7C1512AV18-167BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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