Cypress Semiconductor Corp CY7C1512KV18-250BZXC

Overview

CY7C1512KV18-250BZXC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR® II SRAM with dual independent DDR read/write ports, 250 MHz clock operation (500 MT/s per port), 1.5-cycle read latency (DOFF = HIGH), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1512KV18-250BZXC datasheet, CY7C1512KV18-250BZXC pinout, CY7C1512KV18-250BZXC application, or CY7C1512KV18-250BZXC equivalent, key selection criteria include burst depth (2-word), I/O voltage compatibility (VDDQ = 1.4–1.8 V), echo clock support (CQ/CQ), PLL-based data placement, and JTAG 1149.1 testability.

Technical Context

The CY7C1512KV18 implements true QDR II architecture with physically separate read and write data paths-no bus turnaround required. Its synchronous pipelined design uses rising edges of K/K clocks for address/data latching and C/C clocks for output timing control, enabling deterministic 1.5-cycle read latency when DOFF is asserted HIGH.

Internal self-timed writes, programmable impedance (ZQ calibration), and echo clocks (CQ/CQ) ensure signal integrity at 500 MT/s. The device supports depth expansion via RPS/WPS and byte write masking (BWS[1:0]) for selective 18-bit word updates without read-modify-write cycles.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C361024B-250BIN and IS61QW25636A-250TQLI, CY7C1512KV18-250BZXC uniquely balances 4M×18 density, DOFF-configurable latency, ZQ calibration, and echo clocks-making it optimal for FPGA-based telecom buffers requiring both bandwidth and timing robustness.

Availability

CY7C1512KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and test equipment pattern memory requiring stable component supply across multi-year production cycles.

Supply support for CY7C1512KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR II SRAM product line was designed specifically for high-throughput, low-latency networking and telecommunications infrastructure-emphasizing deterministic timing, concurrent access, and signal integrity at multi-Gbps data rates.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-250BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for maximum throughput; when LOW, it enables 1-cycle latency for backward compatibility with QDR I controllers. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

How does the ZQ pin operate during initialization?

The ZQ pin connects to an external 240 Ω resistor to ground and initiates on-die impedance calibration during power-up or upon command via the JTAG interface. This calibrates HSTL output drivers to maintain consistent 25 Ω or 50 Ω termination across process, voltage, and temperature variations-ensuring signal integrity at 500 MT/s.

Can CY7C1512KV18-250BZXC operate with only one clock domain?

Yes-it supports single-clock mode where K and C are tied together (and K and C likewise), eliminating need for separate clock nets. In this configuration, all inputs and outputs are synchronized to the same clock edge, simplifying board layout at the cost of reduced timing margin versus dual-clock operation.

What is the purpose of BWS[1:0] in CY7C1512KV18-250BZXC?

BWS[1:0] (Byte Write Select) enables selective 9-bit subword writes to the 18-bit data bus: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either signal is deasserted (HIGH), its corresponding 9-bit segment is masked-preserving existing data without requiring a read-modify-write sequence.