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Cypress Semiconductor Corp CY7C1512KV18-300BZI

Part No.:
CY7C1512KV18-300BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512KV18-300BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:178

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Product details

Overview

CY7C1512KV18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 300 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (600 Mbps per pin), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1512KV18 datasheet, CY7C1512KV18 pinout, CY7C1512KV18 application, or CY7C1512KV18 equivalent, key selection criteria include burst depth (2-word), read latency (1.5 cycles with DOFF HIGH), echo clock support (CQ/CQ), PLL-based timing alignment, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements true dual-port synchronous pipelined architecture: independent K/K clocks drive write address/data latching, while C/C clocks control output register timing. The internal PLL synchronizes data placement to minimize skew across 18-bit wide DDR outputs.

It supports byte-write select (BWS[1:0]) for partial-word writes and uses echo clocks (CQ/CQ) to enable source-synchronous capture at the receiver. DOFF pin configures read latency between 1-cycle (QDR I mode) and 1.5-cycle (QDR II mode), preserving backward compatibility while enabling higher bandwidth.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4M × 18-bit = 72 Mbit; enables compact buffer storage for multi-gigabit packet queues
Max Clock Frequency300 MHz; sets maximum sustained data rate of 600 MT/s per pin via DDR
Read Latency1.5 cycles (DOFF = HIGH); ensures deterministic timing for pipeline-aligned read responses
Core Supply VoltageVDD = 1.8 V ± 0.1 V; matches low-voltage ASIC/FPGA I/O domains and reduces dynamic power
I/O Supply RangeVDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5V or 1.8V HSTL-compatible controllers
Burst Length2-word fixed burst; minimizes address bus overhead and guarantees predictable access timing
Package165-ball FBGA (13 × 15 × 1.4 mm); provides 0.8 mm ball pitch for controlled-impedance routing in dense backplanes

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputsLatched on rising edge of K/K; 18-bit parallel path for burst-aligned write data
Q[17:0]Synchronous read data outputsDriven on rising edge of C/C; DDR output with echo clock (CQ/CQ) for source-synchronous capture
K / KWrite/read address & data clocksSeparate differential input clocks; rising edges latch addresses and write data independently
C / CRead data output clocksControl output register timing; enable precise alignment of Q[17:0] with system capture logic
WPSWrite port selectActive-low signal enabling write transactions; deassertion blocks D[17:0] from entering memory array
BWS[1:0]Byte write selectsTwo active-low signals controlling 9-bit byte segments (D[8:0], D[17:9]); allow partial-word updates without read-modify-write
DOFFRead latency mode controlHigh = 1.5-cycle latency (QDR II); Low = 1-cycle latency (QDR I compatibility)
CQ / CQEcho clocksOutput copies of C/C with matched trace delay; simplify high-speed data capture at receiver
TMS/TCK/TDI/TDOJTAG boundary scan interfaceIEEE 1149.1 compliant; enables in-system test and interconnect verification without external probes

Key Features

FeatureDesign Value
Independent Read/Write PortsEliminates bus turnaround delays; enables simultaneous 600 MB/s read + 600 MB/s write throughput
PLL-Based Timing AlignmentCompensates for clock skew and flight time mismatches across 18-bit DDR outputs
Source-Synchronous Echo Clocks (CQ/CQ)Removes need for tight board-level clock-data skew control; simplifies >300 MHz system timing closure
Configurable Read Latency (DOFF)Supports migration from legacy QDR I designs while unlocking QDR II bandwidth in new systems
HSTL-Compatible I/O with Variable DriveAdjustable output strength matches trace impedance; reduces signal integrity issues in multi-drop topologies

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packets in 10G/40G Ethernet switch fabric ASICs where bursty traffic demands zero-turnaround memory access.

IC Role / Device Role / Timing Role: High-throughput dual-port SRAM serving as first-level packet buffer; synchronized to line-rate clocks via K/K and C/C inputs.

Use Value: 600 MB/s concurrent read/write bandwidth prevents head-of-line blocking during peak traffic bursts.

Use Scenario: Buffering ATM/SONET cell payloads in OC-192 line interface modules requiring deterministic latency and error-free coherency.

IC Role / Device Role / Timing Role: QDR II SRAM acting as elastic store between framer and switch fabric; DOFF pin configured for 1-cycle latency to meet strict jitter budgets.

Use Value: Full data coherency and self-timed writes guarantee most-current packet data is always available for real-time processing.

Baseband Processing MemoryTest Equipment Pattern Memory

Use Scenario: Holding channelized IQ samples in LTE/5G massive MIMO baseband units where parallel FFT engines require simultaneous access to adjacent sample sets.

IC Role / Device Role / Timing Role: Dual-port memory providing independent read/write paths to two DSP cores; BWS[1:0] enables selective update of calibration coefficients without disturbing active data streams.

Use Value: 2-word burst and 18-bit width match typical FFT word size, reducing memory access count per transform iteration.

Use Scenario: Storing high-speed digital stimulus/response patterns in automated test equipment (ATE) for SoC validation at 300+ MHz clock rates.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM used as pattern RAM; echo clocks (CQ/CQ) ensure reliable capture of response data under varying temperature and voltage conditions.

Use Value: JTAG boundary scan (TMS/TCK/TDI/TDO) enables in-system verification of memory interconnect integrity before pattern execution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C3256A-15JCINAsynchronous 32K × 16 SRAM; no DDR, no echo clocks, no PLL; 15 ns access timeLower bandwidth (≈133 MB/s), no concurrent R/W; suited for control-plane buffers, not data-planeSelect only if system clock < 100 MHz and latency tolerance > 15 ns; not suitable for QDR II replacement
IS61WV102418BLL-10BLISynchronous 1M × 18 SRAM; single-port, 10 ns cycle time, no burst, no DDRNo concurrent access; requires external arbitration; max throughput ~180 MB/sUse only in cost-sensitive, non-pipelined designs where 72-Mbit density suffices but QDR II features are unnecessary

Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C1512KV18 uniquely delivers 600 MB/s concurrent bandwidth, source-synchronous echo clocks, and configurable latency-critical for data-plane memory in telecom infrastructure where deterministic timing and zero bus turnaround are mandatory.

Availability

CY7C1512KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1512KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1512KV18 belongs to the QDR® II SRAM product line, engineered specifically for zero-turnaround, high-bandwidth data-path buffering in networking and telecommunications infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1512KV18?

The DOFF (Data Out Fast) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle QDR II latency for optimized bandwidth; when LOW, it reverts to 1-cycle QDR I latency for backward compatibility. This setting is sampled synchronously on the K clock edge at power-up and remains static during operation unless reset.

How does the CY7C1512KV18 handle partial-word writes?

Partial-word writes are controlled by BWS[1:0] (Byte Write Select) inputs: BWS0 enables writing to D[8:0], BWS1 to D[17:9]. Both are active-low and sampled on K/K rising edges. Unselected bytes retain prior contents, eliminating need for read-modify-write cycles and preserving data coherency during concurrent access.

Can CY7C1512KV18 operate with only one clock domain?

Yes - in Single Clock Mode, the device accepts identical K and C clocks (with appropriate phase alignment), using K for both address/data latching and output register control. This simplifies clock tree design but forfeits independent read/write timing optimization and echo clock benefits.

What is the role of the CQ and CQ pins?

CQ and CQ are echo clocks - buffered copies of C and C outputs with matched propagation delay to Q[17:0]. They provide source-synchronous timing references at the receiver, enabling reliable capture of DDR data without requiring tight board-level clock-data skew control, especially critical above 300 MHz.

CY7C1512KV18-300BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1512KV18-300BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1512KV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512KV18-300BZI reliable?

The price and inventory of CY7C1512KV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512KV18-300BZI is usually 5 days.

3.What payment methods are accepted for CY7C1512KV18-300BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512KV18-300BZI transactions.

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CY7C1512KV18-300BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512KV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for CY7C1512KV18-300BZI?

For technical support, including CY7C1512KV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512KV18-300BZI requirements.

6.How does Aetrix verify that CY7C1512KV18-300BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1512KV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512KV18-300BZI meets industry standards.

7.What is the process for return or replacement of CY7C1512KV18-300BZI?

All CY7C1512KV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512KV18-300BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512KV18-300BZI part is unused and in its original packaging.

Return procedure for CY7C1512KV18-300BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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