Cypress Semiconductor Corp CY7C1512KV18-300BZI
- Part No.:
- CY7C1512KV18-300BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512KV18-300BZI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:178
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Product details
Overview
CY7C1512KV18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 300 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (600 Mbps per pin), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.
For engineers reviewing the CY7C1512KV18 datasheet, CY7C1512KV18 pinout, CY7C1512KV18 application, or CY7C1512KV18 equivalent, key selection criteria include burst depth (2-word), read latency (1.5 cycles with DOFF HIGH), echo clock support (CQ/CQ), PLL-based timing alignment, and FBGA-165 package compatibility with high-speed PCB layout constraints.
Technical Context
This SRAM implements true dual-port synchronous pipelined architecture: independent K/K clocks drive write address/data latching, while C/C clocks control output register timing. The internal PLL synchronizes data placement to minimize skew across 18-bit wide DDR outputs.
It supports byte-write select (BWS[1:0]) for partial-word writes and uses echo clocks (CQ/CQ) to enable source-synchronous capture at the receiver. DOFF pin configures read latency between 1-cycle (QDR I mode) and 1.5-cycle (QDR II mode), preserving backward compatibility while enabling higher bandwidth.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18-bit = 72 Mbit; enables compact buffer storage for multi-gigabit packet queues |
| Max Clock Frequency | 300 MHz; sets maximum sustained data rate of 600 MT/s per pin via DDR |
| Read Latency | 1.5 cycles (DOFF = HIGH); ensures deterministic timing for pipeline-aligned read responses |
| Core Supply Voltage | VDD = 1.8 V ± 0.1 V; matches low-voltage ASIC/FPGA I/O domains and reduces dynamic power |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5V or 1.8V HSTL-compatible controllers |
| Burst Length | 2-word fixed burst; minimizes address bus overhead and guarantees predictable access timing |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); provides 0.8 mm ball pitch for controlled-impedance routing in dense backplanes |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K/K; 18-bit parallel path for burst-aligned write data |
| Q[17:0] | Synchronous read data outputs | Driven on rising edge of C/C; DDR output with echo clock (CQ/CQ) for source-synchronous capture |
| K / K | Write/read address & data clocks | Separate differential input clocks; rising edges latch addresses and write data independently |
| C / C | Read data output clocks | Control output register timing; enable precise alignment of Q[17:0] with system capture logic |
| WPS | Write port select | Active-low signal enabling write transactions; deassertion blocks D[17:0] from entering memory array |
| BWS[1:0] | Byte write selects | Two active-low signals controlling 9-bit byte segments (D[8:0], D[17:9]); allow partial-word updates without read-modify-write |
| DOFF | Read latency mode control | High = 1.5-cycle latency (QDR II); Low = 1-cycle latency (QDR I compatibility) |
| CQ / CQ | Echo clocks | Output copies of C/C with matched trace delay; simplify high-speed data capture at receiver |
| TMS/TCK/TDI/TDO | JTAG boundary scan interface | IEEE 1149.1 compliant; enables in-system test and interconnect verification without external probes |
Key Features
| Feature | Design Value |
|---|---|
| Independent Read/Write Ports | Eliminates bus turnaround delays; enables simultaneous 600 MB/s read + 600 MB/s write throughput |
| PLL-Based Timing Alignment | Compensates for clock skew and flight time mismatches across 18-bit DDR outputs |
| Source-Synchronous Echo Clocks (CQ/CQ) | Removes need for tight board-level clock-data skew control; simplifies >300 MHz system timing closure |
| Configurable Read Latency (DOFF) | Supports migration from legacy QDR I designs while unlocking QDR II bandwidth in new systems |
| HSTL-Compatible I/O with Variable Drive | Adjustable output strength matches trace impedance; reduces signal integrity issues in multi-drop topologies |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packets in 10G/40G Ethernet switch fabric ASICs where bursty traffic demands zero-turnaround memory access. IC Role / Device Role / Timing Role: High-throughput dual-port SRAM serving as first-level packet buffer; synchronized to line-rate clocks via K/K and C/C inputs. Use Value: 600 MB/s concurrent read/write bandwidth prevents head-of-line blocking during peak traffic bursts. | Use Scenario: Buffering ATM/SONET cell payloads in OC-192 line interface modules requiring deterministic latency and error-free coherency. IC Role / Device Role / Timing Role: QDR II SRAM acting as elastic store between framer and switch fabric; DOFF pin configured for 1-cycle latency to meet strict jitter budgets. Use Value: Full data coherency and self-timed writes guarantee most-current packet data is always available for real-time processing. |
| Baseband Processing Memory | Test Equipment Pattern Memory |
Use Scenario: Holding channelized IQ samples in LTE/5G massive MIMO baseband units where parallel FFT engines require simultaneous access to adjacent sample sets. IC Role / Device Role / Timing Role: Dual-port memory providing independent read/write paths to two DSP cores; BWS[1:0] enables selective update of calibration coefficients without disturbing active data streams. Use Value: 2-word burst and 18-bit width match typical FFT word size, reducing memory access count per transform iteration. | Use Scenario: Storing high-speed digital stimulus/response patterns in automated test equipment (ATE) for SoC validation at 300+ MHz clock rates. IC Role / Device Role / Timing Role: Deterministic-latency SRAM used as pattern RAM; echo clocks (CQ/CQ) ensure reliable capture of response data under varying temperature and voltage conditions. Use Value: JTAG boundary scan (TMS/TCK/TDI/TDO) enables in-system verification of memory interconnect integrity before pattern execution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-15JCIN | Asynchronous 32K × 16 SRAM; no DDR, no echo clocks, no PLL; 15 ns access time | Lower bandwidth (≈133 MB/s), no concurrent R/W; suited for control-plane buffers, not data-plane | Select only if system clock < 100 MHz and latency tolerance > 15 ns; not suitable for QDR II replacement |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM; single-port, 10 ns cycle time, no burst, no DDR | No concurrent access; requires external arbitration; max throughput ~180 MB/s | Use only in cost-sensitive, non-pipelined designs where 72-Mbit density suffices but QDR II features are unnecessary |
Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C1512KV18 uniquely delivers 600 MB/s concurrent bandwidth, source-synchronous echo clocks, and configurable latency-critical for data-plane memory in telecom infrastructure where deterministic timing and zero bus turnaround are mandatory.
Availability
CY7C1512KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and test equipment pattern memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C1512KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
CY7C1512KV18 belongs to the QDR® II SRAM product line, engineered specifically for zero-turnaround, high-bandwidth data-path buffering in networking and telecommunications infrastructure.
FAQ
What is the function of the DOFF pin on CY7C1512KV18?
The DOFF (Data Out Fast) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle QDR II latency for optimized bandwidth; when LOW, it reverts to 1-cycle QDR I latency for backward compatibility. This setting is sampled synchronously on the K clock edge at power-up and remains static during operation unless reset.
How does the CY7C1512KV18 handle partial-word writes?
Partial-word writes are controlled by BWS[1:0] (Byte Write Select) inputs: BWS0 enables writing to D[8:0], BWS1 to D[17:9]. Both are active-low and sampled on K/K rising edges. Unselected bytes retain prior contents, eliminating need for read-modify-write cycles and preserving data coherency during concurrent access.
Can CY7C1512KV18 operate with only one clock domain?
Yes - in Single Clock Mode, the device accepts identical K and C clocks (with appropriate phase alignment), using K for both address/data latching and output register control. This simplifies clock tree design but forfeits independent read/write timing optimization and echo clock benefits.
What is the role of the CQ and CQ pins?
CQ and CQ are echo clocks - buffered copies of C and C outputs with matched propagation delay to Q[17:0]. They provide source-synchronous timing references at the receiver, enabling reliable capture of DDR data without requiring tight board-level clock-data skew control, especially critical above 300 MHz.
CY7C1512KV18-300BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1512KV18-300BZI FAQ
1.How can I place an order for CY7C1512KV18-300BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512KV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512KV18-300BZI reliable?
The price and inventory of CY7C1512KV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512KV18-300BZI is usually 5 days.
3.What payment methods are accepted for CY7C1512KV18-300BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512KV18-300BZI transactions.
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CY7C1512KV18-300BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1512KV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512KV18-300BZI?
For technical support, including CY7C1512KV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512KV18-300BZI requirements.
6.How does Aetrix verify that CY7C1512KV18-300BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1512KV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512KV18-300BZI meets industry standards.
7.What is the process for return or replacement of CY7C1512KV18-300BZI?
All CY7C1512KV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512KV18-300BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512KV18-300BZI part is unused and in its original packaging.
Return procedure for CY7C1512KV18-300BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1512KV18-300BZI Tags

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