Cypress Semiconductor Corp CY7C1512KV18-333BZXC

Overview

CY7C1512KV18-333BZXC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 333 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (700 Mbps effective data rate), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent read/write transactions with 1.5-cycle read latency (DOFF = HIGH) in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C1512KV18-333BZXC datasheet, CY7C1512KV18-333BZXC pinout, CY7C1512KV18-333BZXC application, or CY7C1512KV18-333BZXC equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), PLL-based timing accuracy, and FBGA-165 package compatibility for high-speed PCB layout.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed address bus, with address latching on alternate rising edges of K/K clocks. Internal self-timed writes and pipelined access eliminate bus turnaround delays.

The device uses dual input clocks (K/K for address/control, C/C for output timing) plus echo clocks (CQ/CQ) to align data capture at the receiver. A built-in PLL ensures precise data placement relative to output clocks, supporting stable operation at 333 MHz with 1.5-cycle read latency when DOFF is asserted HIGH.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1512KV18-350BZXC, this part trades 17 MHz speed headroom for relaxed signal integrity requirements; compared with AS7C3256A-15JCIN, it provides true concurrent access, DDR bandwidth, and advanced timing control essential for modern packet-processing systems.

Availability

CY7C1512KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, telecom line card memory, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1512KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial applications.

This device belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-throughput memory access in packet-switched infrastructure where concurrent read/write and precise timing control are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-333BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimal QDR II performance; when LOW, it reverts to 1-cycle latency for backward compatibility with QDR I systems. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

How does the ZQ pin operate in CY7C1512KV18-333BZXC?

The ZQ pin connects to a 240 Ω ±1% external resistor to ground and enables on-die impedance calibration for HSTL I/O drivers. During initialization or periodic recalibration, the device measures ZQ resistance and adjusts output driver strength and termination to maintain consistent 240 Ω source impedance, ensuring signal integrity across voltage and temperature variations.

Can CY7C1512KV18-333BZXC operate with only one clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), simplifying timing design at the cost of reduced flexibility. In this mode, read data is registered to the same clock used for address latching, eliminating echo clock dependency but limiting maximum achievable frequency due to internal path delays.

What is the purpose of BWS[1:0] in CY7C1512KV18-333BZXC?

BWS[1:0] (Byte Write Select) controls 9-bit write masking: BWS0 enables writes to D[8:0], BWS1 to D[17:9]. Both signals are active-low and sampled on the K clock edge. This allows partial 18-bit word updates without read-modify-write cycles, preserving unselected bytes and reducing bus traffic in protocol header manipulation or metadata update scenarios.