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Cypress Semiconductor Corp CY7C1512KV18-333BZXI

Part No.:
CY7C1512KV18-333BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512KV18-333BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:702

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Product details

Overview

CY7C1512KV18-333BZXI from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 333 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (700 MT/s effective data rate), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent read/write transactions with 1.5-cycle read latency (DOFF = HIGH) for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1512KV18-333BZXI datasheet, CY7C1512KV18-333BZXI pinout, CY7C1512KV18-333BZXI application, or CY7C1512KV18-333BZXI equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), JTAG 1149.1 compliance, PLL-based timing accuracy, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1512KV18-333BZXI implements true dual-port synchronous pipelined architecture: independent K/K clocks drive address/data latching on rising edges only, while C/C clocks control output registers to minimize skew. Its 2M × 18 memory array uses multiplexed address bus with port-select logic (WPS/RPS) enabling depth expansion without external arbitration.

Read operations execute with programmable latency (1-cycle when DOFF = LOW; 1.5-cycle when DOFF = HIGH), and writes are self-timed with synchronous byte write enables (BWS[1:0]) supporting partial-word updates. Echo clocks (CQ/CQ) align with output data edges to simplify capture in FPGA-based systems operating at 333 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4M × 18-bit (72 Mbit); supports 2-word burst transfers per access
Max Clock Frequency333 MHz; defines maximum sustained transaction rate of 333 million cycles/sec
Data Rate700 MT/s (DDR on both ports); doubles throughput vs. single-data-rate interface
Core SupplyVDD = 1.8 V ±0.1 V; fixed low-voltage core enables power-efficient high-speed operation
I/O Supply RangeVDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5V or 1.8V logic families
Read Latency1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); selectable via pin to match system timing budget
Package165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, thermal-performance-optimized for dense routing

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant (BZXI suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data input18-bit parallel data sampled on rising edge of K clock; supports full or partial writes via BWS[1:0]
Q[17:0]Synchronous read data output18-bit parallel output registered to C/C clocks; aligned with echo clocks CQ/CQ for reliable capture
WPSWrite port selectActive-low signal enabling write operations; deassertion disables all write data latching
RPSRead port selectActive-low signal enabling read operations; allows port gating during depth expansion
BWS[1:0]Byte write selectTwo active-low signals controlling 9-bit byte segments (D[8:0], D[17:9]); enables partial-word updates
K, KInput clocksDual-phase clocks driving address and write data latching; rising-edge triggered only
C, COutput clocksDual-phase clocks driving read data and echo clock generation; minimizes flight-time mismatch
CQ, CQEcho clocksOutput-aligned copies of C/C; used by receiving logic to sample Q[17:0] with zero setup/hold margin
DOFFRead latency controlHigh = 1.5-cycle latency; Low = 1-cycle latency; sets internal pipeline depth for timing closure
TMS, TCK, TDI, TDOJTAG boundary scan interfaceIEEE 1149.1 compliant test access port for production testing and debug visibility

Key Features

FeatureDesign Value
Separate read/write data pathsEliminates bus turnaround overhead; enables true concurrent read+write at full bandwidth
2-word burst architectureGuarantees two sequential words per access-no additional address setup required between bursts
Programmable read latency (1 or 1.5 cycles)Allows system-level timing optimization: lower latency for latency-sensitive control paths, higher for throughput-focused data paths
Variable-drive HSTL outputsConfigurable output strength matches trace impedance, reducing signal integrity issues at 700 MT/s
On-chip PLLLocks output timing to input clocks with sub-cycle jitter; essential for stable DDR data eye at 333 MHz
Full data coherencyEnsures read operations always return most recently written data-even during overlapping read/write sequences

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches with real-time traffic shaping.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, using independent K/C clocks for deterministic latency.

Use Value: Concurrent read/write eliminates arbitration delay, sustaining 333 MHz × 2 × 18-bit = 12 Gbps aggregate bandwidth for wire-speed forwarding.

Use Scenario: Frame buffering in 10G/40G OTN transport equipment requiring low-jitter, deterministic access.

IC Role / Device Role / Timing Role: High-speed memory subsystem providing synchronized access to framing logic and FEC engines via echo-clocked outputs.

Use Value: CQ/CQ echo clocks enable FPGA capture with ±50 ps setup/hold margin at 333 MHz, eliminating external delay compensation.

Baseband Processing MemoryTest Equipment Pattern Memory

Use Scenario: Temporary storage of IQ samples in LTE/5G massive MIMO baseband units during FFT/IFFT processing.

IC Role / Device Role / Timing Role: Burst-access SRAM interfacing with DSP cores and RF front-end controllers, leveraging 2-word burst to match symbol length.

Use Value: 1.5-cycle latency mode (DOFF = HIGH) provides predictable 4.5 ns read response, simplifying timing closure in multi-clock-domain SoCs.

Use Scenario: Vector pattern storage in high-speed ATE systems generating >1 Gb/s stimulus and response streams.

IC Role / Device Role / Timing Role: Deterministic-access memory feeding pattern generators and comparators, using JTAG for in-system verification.

Use Value: JTAG 1149.1 support enables boundary-scan validation of all 165-ball interconnects, reducing test development time by >40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1512KV18-300BZXILower max frequency (300 MHz vs. 333 MHz); identical pinout, timing model, and feature setSuitable for cost-sensitive designs where 333 MHz headroom is unnecessarySelect when system clock tree operates ≤300 MHz and thermal budget restricts higher-frequency operation
AS7C36256P-333BINAsynchronous SRAM with no echo clocks, no JTAG, no DOFF latency control; 333 MHz max async access timeLimited to simpler systems lacking strict DDR timing alignment requirementsChoose only if design lacks FPGA/ASIC support for echo-clock capture and requires lowest gate count interface

Compared with CY7C1512KV18-300BZXI, the -333BZXI offers +33 MHz bandwidth headroom without changing layout or firmware; versus AS7C36256P-333BIN, it delivers deterministic DDR timing, full concurrency, and production-testability-critical for telecom infrastructure.

Availability

CY7C1512KV18-333BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1512KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and mixed-signal ICs for networking, automotive, and industrial applications.

The QDR® II SRAM product line targets high-throughput, low-latency memory subsystems in packet-switched infrastructure-specifically engineered to replace asynchronous SRAMs in systems demanding concurrent access and precise DDR timing.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-333BZXI?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it enables 1-cycle latency for minimal read delay. This setting directly controls internal pipeline staging and must be held stable during operation.

Can CY7C1512KV18-333BZXI operate with only one clock domain (K = C)?

Yes-it supports single-clock-domain operation where K and C are tied together, but this sacrifices skew mitigation benefits. In that mode, echo clocks (CQ/CQ) still track C, and output registers remain clocked by C. Full performance (333 MHz) requires separate K and C routing per datasheet AC timing specifications.

How does byte write select (BWS) work for the 18-bit data width?

BWS[1:0] divides the 18-bit D[17:0] bus into two 9-bit bytes: BWS0 enables D[8:0], BWS1 enables D[17:9]. Both signals are sampled synchronously with K clock edges. Deasserting either BWS leaves corresponding 9-bit segment unchanged-enabling efficient partial-word updates without read-modify-write cycles.

Is the 165-ball FBGA package compatible with standard reflow profiles?

Yes-the CY7C1512KV18-333BZXI in FBGA-165 (13 × 15 mm) follows IPC/JEDEC J-STD-020 moisture sensitivity level 3 and qualifies for standard lead-free reflow profiles (peak 260°C). Board layout must observe 0.8 mm ball pitch spacing, thermal pad under center, and controlled-impedance routing for K/C/CQ signals.

CY7C1512KV18-333BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1512KV18-333BZXI FAQ

1.How can I place an order for CY7C1512KV18-333BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512KV18-333BZXI reliable?

The price and inventory of CY7C1512KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512KV18-333BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1512KV18-333BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512KV18-333BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512KV18-333BZXI?

CY7C1512KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512KV18-333BZXI?

For technical support, including CY7C1512KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512KV18-333BZXI requirements.

6.How does Aetrix verify that CY7C1512KV18-333BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1512KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512KV18-333BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1512KV18-333BZXI?

All CY7C1512KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512KV18-333BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512KV18-333BZXI part is unused and in its original packaging.

Return procedure for CY7C1512KV18-333BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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