Cypress Semiconductor Corp CY7C1512V18-167BZXI

Overview

CY7C1512V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 167 MHz maximum operating frequency, DDR interfaces on both ports (500 MT/s effective data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers concurrent read/write transactions for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1512V18 datasheet, CY7C1512V18 pinout, CY7C1512V18 application, or CY7C1512V18 equivalent, key selection criteria include burst depth (2-word), I/O voltage range (VDDQ = 1.4V to 1.8V), DLL-enabled timing accuracy, HSTL-compatible output drive, and JTAG 1149.1 test access support.

Technical Context

The CY7C1512V18 implements QDR-II architecture with fully independent read and write ports sharing a multiplexed 21-bit address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling pipelined access without bus turnaround.

It uses dual output clocks (C/C̄) with echo clocks (CQ/CQ̄) to deskew data capture across high-speed PCB traces, and integrates a Delay Lock Loop (DLL) to align internal data paths with external clock edges-critical for maintaining setup/hold margins at 500 MT/s.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, Pb-free and leaded options available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with AS7C361024B-167BIN and IS61WV102418B-167TQLI, the CY7C1512V18 uniquely provides DLL-aligned echo clocks and true concurrent read/write-enabling deterministic sub-2 ns access in high-speed serial link subsystems where timing margin is constrained.

Availability

CY7C1512V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffer, and high-performance test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1512V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The QDR-II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking and telecom infrastructure-specifically engineered to replace asynchronous SRAMs and simplify DDR-based memory controllers.

FAQ

What is the minimum VDDQ voltage supported by CY7C1512V18?

The device specifies VDDQ = 1.4 V to 1.8 V. Operation below 1.4 V is not characterized or guaranteed; HSTL output drive strength and timing parameters degrade outside this range. System designs must regulate VDDQ within this window using dedicated LDOs or PMIC rails.

Can CY7C1512V18 operate without the DLL enabled?

Yes-asserting DOFF low disables the DLL. However, AC timing parameters change significantly: tAC increases from 1.2 ns to 1.8 ns, and output jitter rises above 0.5 ns. This mode is intended only for power-sensitive standby states or compatibility validation-not for active high-speed operation.

How many address bits are required for CY7C1512V18's 4M × 18 configuration?

21 address bits (A[20:0]) are required. The internal array is organized as two 2M × 18 banks; address bits A[20:0] fully decode the 4M-word space. No additional bank select lines are needed-the architecture uses address multiplexing instead of explicit bank control.

Is ZQ pin mandatory for functional operation?

No-ZQ is optional for impedance tuning. If unused, connect ZQ directly to VDDQ to enable minimum output drive strength (≈25 Ω). Leaving ZQ floating or tied to GND violates absolute maximum ratings and may cause output driver malfunction or excessive current draw.