Cypress Semiconductor Corp CY7C1512V18-200BZC

Overview

CY7C1512V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 250 MHz QDR-II SRAM with separate read/write ports, DDR interfaces on both ports, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It operates at core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.8 V, supporting concurrent high-bandwidth memory access in networking packet buffers and baseband processing.

For engineers reviewing the CY7C1512V18 datasheet, CY7C1512V18 pinout, CY7C1512V18 application, or CY7C1512V18 equivalent, key selection criteria include its dual-clock DDR timing (K/K and C/C), echo clocks (CQ/CQ) for simplified high-speed capture, 18-bit burst width, synchronous self-timed writes, and HSTL-compatible variable-drive outputs.

Technical Context

The CY7C1512V18 implements QDR-II architecture with fully independent read and write ports sharing a multiplexed 21-bit address bus. Address latching occurs on alternating rising edges of K (read) and K (write) clocks, enabling pipelined access without bus turnaround.

Read data is output-synchronized to C/C clocks with echo clocks CQ/CQ referenced to those outputs; write data is sampled on K/K edges. A Delay Lock Loop (DLL) ensures precise internal timing alignment, and JTAG 1149.1 support enables boundary-scan testability.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512V18 delivers 2.3× higher sustained bandwidth (9 GB/s vs. ≤4 GB/s), deterministic DDR timing via DLL and echo clocks, and true concurrency - essential for real-time packet and signal processing pipelines.

Availability

CY7C1512V18 is available at Aetrix Electronics and suitable for networking packet buffers, baseband signal processing, and telecom line card control requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for CY7C1512V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

CY7C1512V18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory access in packet-forwarding and real-time signal processing subsystems.

FAQ

What is the minimum VDDQ voltage supported by CY7C1512V18?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed and may cause output driver malfunction or timing violations. The 1.4 V lower bound is specified in the Absolute Maximum Ratings table and validated across temperature and process corners.

Can CY7C1512V18 operate without the DLL enabled?

Yes - asserting DOFF low disables the DLL. However, timing parameters change significantly: tAC increases by up to 1.8 ns, and CQ/CQ phase relationship to C/C becomes undefined. Full timing revalidation per Table 10 (DLL Off Mode) is required before deployment.

How many address bits does CY7C1512V18 require?

It uses 21 address inputs (A[20:0]) to access the full 4M × 18-bit array. These are multiplexed for both read and write ports; internal decoding splits the address space across two 2M × 18 sub-arrays as described in the Logic Block Diagram on page 3.

Is ZQ pin mandatory for operation?

No - ZQ can be tied directly to VDDQ to enable minimum output impedance mode (≈20 Ω). Leaving it unconnected or tying to GND violates Absolute Maximum Ratings and may damage the device. External resistor calibration is recommended for optimal signal integrity above 300 MT/s.