Cypress Semiconductor Corp CY7C1512V18-200BZI
- Part No.:
- CY7C1512V18-200BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512V18-200BZI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:100
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Product details
Overview
CY7C1512V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 250 MHz clock operation, DDR interfaces on both ports (500 MT/s effective data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers concurrent read/write transactions for high-bandwidth packet buffering in network line cards.
For engineers reviewing the CY7C1512V18 datasheet, CY7C1512V18 pinout, CY7C1512V18 application, or CY7C1512V18 equivalent, key selection criteria include its dual-clock DDR timing (K/K and C/C), echo clocks (CQ/CQ) for source-synchronous capture, 18-bit burst width, HSTL I/O compatibility, and DLL-enabled precise data placement at 250 MHz.
Technical Context
The CY7C1512V18 implements QDR-II architecture with fully independent read and write ports sharing a multiplexed 21-bit address bus. Each port uses dedicated synchronous registers clocked by K/K for inputs and C/C for outputs, enabling true concurrency without bus turnaround.
It employs a Delay Lock Loop (DLL) to align internal timing with external clocks, supports variable-drive HSTL output buffers, and uses VREF-referenced input thresholds. Write operations are internally self-timed, and depth expansion is enabled via BWS[1:0] byte write selects for 18-bit data width.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18-bit = 72 Mbit; supports 2-word burst transfers per access |
| Max Clock Frequency | 250 MHz; enables 500 MT/s DDR data rate on both read and write ports |
| Core Supply | VDD = 1.8 V ±0.1 V; powers logic and memory array independently of I/O |
| I/O Supply | VDDQ = 1.4 V to 1.8 V; sets HSTL-compatible output drive strength and threshold |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); supports high-density routing and thermal dissipation |
| Timing Architecture | DLL-synchronized output timing with echo clocks CQ/CQ; eliminates board-level skew for reliable >400 Mbps capture |
| Write Select | BWS[1:0] controls two 9-bit bytes; enables partial writes without read-modify-write overhead |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edge of K/K; 18-bit parallel input for burst writes |
| Q[17:0] | Synchronous read data output | Driven on rising edge of C/C; 18-bit DDR output with echo-clock alignment |
| K, K | Positive/negative input clocks | Capture all synchronous inputs (address, control, data); define system timing reference |
| C, C | Positive/negative output clocks | Source-synchronous clocking for Q[17:0]; used with CQ/CQ to deskew flight time |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C; simplify high-speed data capture at controller |
| BWS[1:0] | Byte write select (active low) | Selects D[8:0] and D[17:9] independently; enables granular 9-bit write masking |
| RPS, WPS | Read/write port select (active low) | Enable concurrent but independent port activation; support depth expansion |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q[17:0] and CQ/CQ drive strength to 0.2×RQ |
| DOFF | DLL disable control | Pulling low disables DLL; alters output timing-requires revalidation per datasheet Table 12 |
| VREF | HSTL reference voltage input | Static bias point for all HSTL I/O; must be stable at 0.75×VDDQ for compliance |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround delay; enables full-duplex 500 MT/s throughput without arbitration |
| 2-word burst architecture | Delivers two 18-bit words per clock cycle-reducing address strobe overhead in streaming applications |
| Source-synchronous echo clocks (CQ/CQ) | Enables deterministic setup/hold margins at 500 MT/s; removes need for complex PCB length matching |
| On-chip DLL | Compensates for process/voltage/temperature variation to maintain <±50 ps output jitter at 250 MHz |
| HSTL Class I/II compatible I/O | Supports 1.4–1.8 V VDDQ with programmable drive strength; interoperable with FPGA transceivers and ASIC I/O |
| JTAG 1149.1 test access | Enables boundary-scan testing and in-system programming without additional test fixtures |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Interface |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffer between line-rate SerDes and traffic manager ASIC. Use Value: Concurrent 500 MT/s reads and writes eliminate head-of-line blocking; 18-bit width matches typical header+checksum word size. | Use Scenario: Interfacing between distributed switch fabric controllers and crossbar schedulers. IC Role / Device Role / Timing Role: Shared memory resource providing synchronized access to flow control tokens and queue state. Use Value: RPS/WPS independence allows simultaneous token read and status update without arbitration latency. |
| Telecom Baseband Processing | Test Equipment Data Capture |
Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP in 4G/LTE base stations. IC Role / Device Role / Timing Role: High-throughput memory staging area with deterministic DDR timing for sample alignment. Use Value: CQ/CQ echo clocks enable sub-cycle sampling accuracy; DLL ensures consistent 250 MHz timing across temperature. | Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Burst-mode acquisition buffer synchronizing to stimulus clock edges. Use Value: 2-word burst + 18-bit width captures two adjacent 9-bit channel samples per cycle; BWS[1:0] supports selective waveform editing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256B-20TIN | Asynchronous 32K × 8 SRAM; no DDR, no echo clocks, no DLL; 20 ns access only | Lower bandwidth, no concurrent R/W; suitable for control-plane buffering, not line-rate data paths | Select only when system clock ≤100 MHz and burst coherency is not required |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 ZBT SRAM; single-port, 10 ns cycle time; no CQ/CQ or DLL | Half the density (18 Mbit), no true concurrency; requires external arbitration for R/W overlap | Choose if cost sensitivity outweighs bandwidth needs and design can tolerate port contention |
Compared with AS7C3256B-20TIN and IS61WV102418BLL-10BLI, the CY7C1512V18 uniquely delivers 72 Mbit density with true dual-port DDR, echo clocks, and DLL-enabling deterministic 500 MT/s operation essential for packet-switched infrastructure.
Availability
CY7C1512V18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric interface, telecom baseband processing, and test equipment data capture requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1512V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems.
The QDR-II SRAM product line targets applications demanding deterministic, high-bandwidth memory access-specifically packet buffering, switch fabrics, and baseband signal processing where bus turnaround latency must be eliminated.
FAQ
What is the minimum VDDQ voltage supported for CY7C1512V18 operation?
The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V violates HSTL Class I specifications and may cause output drive failure or input threshold shift. The recommended operating range is 1.4 V to VDD (1.8 V), with 1.5 V commonly used to balance power and noise margin.
Can CY7C1512V18 operate in single-clock mode using only K and K?
Yes. When C and C are tied to K and K respectively, the device operates in single-clock mode. In this configuration, Q[17:0] is driven on the rising edges of K/K, and CQ/CQ are generated relative to K/K. All timing parameters shift per Table 11 in the datasheet, and echo clock utility is reduced.
How does the ZQ pin affect output impedance calibration?
ZQ connects to an external resistor (RQ) to ground, setting output driver impedance to 0.2 × RQ for Q[17:0], CQ, and CQ. For example, a 50 Ω system bus requires RQ = 250 Ω. Connecting ZQ directly to VDDQ forces minimum impedance (~20 Ω), which may increase crosstalk in dense layouts.
Is CY7C1512V18 pin-compatible with other devices in the CY7C15xxV18 family?
No. While all share the same 165-ball FBGA footprint, pin functions differ significantly across configurations: CY7C1510V18 (x8) uses NWS[1:0], CY7C1525V18 (x9) uses BWS0 only, CY7C1514V18 (x36) uses BWS[3:0], and CY7C1512V18 (x18) uses BWS[1:0]. Address width (A[20:0]) and data width (D/Q[17:0]) also vary.
CY7C1512V18-200BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512V18-200BZI FAQ
1.How can I place an order for CY7C1512V18-200BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512V18-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512V18-200BZI reliable?
The price and inventory of CY7C1512V18-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512V18-200BZI is usually 5 days.
3.What payment methods are accepted for CY7C1512V18-200BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512V18-200BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1512V18-200BZI?
CY7C1512V18-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1512V18-200BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512V18-200BZI?
For technical support, including CY7C1512V18-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512V18-200BZI requirements.
6.How does Aetrix verify that CY7C1512V18-200BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1512V18-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512V18-200BZI meets industry standards.
7.What is the process for return or replacement of CY7C1512V18-200BZI?
All CY7C1512V18-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512V18-200BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512V18-200BZI part is unused and in its original packaging.
Return procedure for CY7C1512V18-200BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1512V18-200BZI Tags

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