Cypress Semiconductor Corp CY7C1512V18-200BZXI
- Part No.:
- CY7C1512V18-200BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512V18-200BZXI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1512V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 250 MHz clock support, DDR interfaces on both ports (500 MT/s effective data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers concurrent read/write operations without bus turnaround, enabling high-bandwidth packet buffering in network line cards and switch fabric controllers.
For engineers reviewing the CY7C1512V18 datasheet, CY7C1512V18 pinout, CY7C1512V18 application, or CY7C1512V18 equivalent, key selection criteria include its 2-word burst architecture, dual-clock timing (K/K and C/C), echo clocks (CQ/CQ), HSTL I/O compatibility, and synchronous self-timed write capability for deterministic latency in telecom infrastructure designs.
Technical Context
The CY7C1512V18 implements QDR-II architecture with physically independent read and write data paths-D[17:0] inputs and Q[17:0] outputs-eliminating bus contention and turn-around delays. Address latching occurs on alternating rising edges of K and K clocks, supporting 21-bit address space (2M × 18 configuration).
It uses a Delay Lock Loop (DLL) to align echo clocks CQ/CQ with output clocks C/C for precise data capture at 500 MT/s. Output impedance is tunable via ZQ pin (0.2×RQ matching), and VREF sets HSTL reference level for all I/Os operating at VDDQ = 1.4–1.8 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18-bit (72 Mbit); supports 2M-depth × 18-bit-wide data path for high-throughput packet buffers. |
| Max Clock Frequency | 250 MHz; enables 500 MT/s DDR transfers per port, delivering 9 Gbps aggregate bandwidth (18-bit × 500 MHz). |
| Core Supply | VDD = 1.8 V ±0.1 V; low-voltage core reduces dynamic power in high-speed memory subsystems. |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V; supports HSTL Class I/II signaling and interoperability with 1.5V/1.8V logic families. |
| Burst Length | 2-word burst per access; fixed-length transfer simplifies controller FIFO design and guarantees predictable latency. |
| Write Latency | Synchronous self-timed writes; no external write-enable strobe required-latency determined solely by K-clock cycle. |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, suitable for dense PCB layouts in telecom modules. |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free and non-Pb-free options available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K/K; 18-bit parallel input path for burst writes without turnaround overhead. |
| Q[17:0] | Synchronous read data outputs | Driven on rising edge of C/C; 18-bit DDR output aligned with echo clocks for jitter-tolerant capture. |
| K, K | Positive/negative input clocks | Control all synchronous inputs (address, control, data); only rising edges used-no differential receiver required. |
| C, C | Positive/negative output clocks | Reference clocks for Q[17:0] and CQ/CQ; enable board-level deskewing of flight time mismatches. |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, DLL-synchronized copies of C/C; simplify high-speed data capture at FPGA/ASIC receivers. |
| RPS, WPS | Read/Write Port Select (active LOW) | Enable independent port activation; deselection tri-states Q[17:0] or ignores D[17:0], enabling depth expansion. |
| BWS[1:0] | Byte Write Select (active LOW) | Selects 9-bit byte groups (BWS0 → D[8:0], BWS1 → D[17:9]); enables partial-word writes without read-modify-write. |
| ZQ | Output impedance calibration input | Connects to external RQ to ground to set Q[17:0]/CQ/CQ drive strength to 0.2×RQ; prevents signal integrity degradation. |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables true concurrent access-no arbitration or bus turnaround needed, reducing controller complexity in full-duplex systems. |
| 2-word burst + DDR I/O | Delivers 36 bits per K-cycle (18-bit × 2 words) at 500 MT/s, achieving 9 Gbps sustained bandwidth with deterministic timing. |
| Delay Lock Loop (DLL) | Aligns CQ/CQ phase with C/C to ±50 ps skew, enabling reliable data sampling at 500 MHz without external delay compensation. |
| HSTL-compatible I/O | VREF-referenced inputs and variable-drive outputs meet JEDEC HSTL Class I/II specs for noise-immune interconnect to FPGAs and ASICs. |
| JTAG 1149.1 test port | Supports boundary-scan testing and in-system diagnostics-critical for high-reliability telecom and military applications. |
Applications
| High-Speed Network Switch Fabric | Telecom Line Card Buffering |
|---|---|
Use Scenario: Storing and forwarding variable-length packets between ingress and egress ports in multi-terabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as central packet buffer with simultaneous write (ingress) and read (egress) access at line rate. Use Value: Eliminates bus turnaround delay, enabling zero-latency full-duplex operation and sustaining 9 Gbps throughput across 18-bit data path. | Use Scenario: Temporary storage of ATM cells or IP fragments in OC-192/STM-64 line interface modules. IC Role / Device Role / Timing Role: Burst-mode SRAM providing deterministic 2-word latency for cell-based traffic shaping and scheduling logic. Use Value: Synchronous self-timed writes guarantee consistent write completion within one K-clock cycle, simplifying scheduler timing closure. |
| Baseband Processing in 4G/LTE Radio Units | High-Performance Test Equipment Memory |
Use Scenario: Interfacing between digital front-end (DFE) and channel processing units in remote radio heads. IC Role / Device Role / Timing Role: Low-latency shared memory for IQ sample exchange with strict timing alignment between TX/RX paths. Use Value: Echo clocks CQ/CQ provide traceable timing references to FPGA receivers, reducing setup/hold margin requirements by >150 ps. | Use Scenario: High-speed pattern memory in automated test equipment (ATE) for semiconductor device validation. IC Role / Device Role / Timing Role: Deterministic-access memory storing stimulus/response vectors synchronized to 250 MHz ATE clock domain. Use Value: 1.8V core + 1.4–1.8V I/O allows direct interfacing with modern ATE pin electronics without level-shifting, cutting BOM cost and layout area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-20TIN | Asynchronous 32K × 8 SRAM; no DDR, no dual-port, 20 ns access time; 5V/3.3V supply only. | Used in legacy control-plane buffers where concurrency and speed are not required. | Select only for cost-sensitive, low-bandwidth applications with simple controller logic. |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM; single-port, 10 ns access, 1.8V core, but lacks QDR-II burst and echo clocks. | Suitable for burst-capable but non-concurrent memory needs in DSP co-processors. | Choose when dual-port concurrency is unnecessary and system clock < 150 MHz. |
Compared with AS7C3256A-20TIN and IS61WV102418BLL-10BLI, the CY7C1512V18 uniquely delivers true concurrent read/write at 500 MT/s with DLL-aligned echo clocks-making it irreplaceable for line-rate packet buffering where deterministic latency and bus efficiency are mandatory.
Availability
CY7C1512V18 is available at Aetrix Electronics and suitable for high-speed network switch fabric, telecom line card buffering, baseband processing in 4G/LTE radio units, and high-performance test equipment requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1512V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
The QDR-II SRAM product line-including CY7C1512V18-is engineered specifically for deterministic, high-bandwidth memory interfacing in telecom infrastructure, where concurrent access, echo-clock synchronization, and sub-nanosecond timing control are critical.
FAQ
What is the maximum supported data rate for CY7C1512V18?
The CY7C1512V18 supports 250 MHz input clocks on K/K and C/C, enabling Double Data Rate transfers at 500 MT/s on both read and write ports. With an 18-bit bus width, this yields 9 Gbps aggregate bandwidth. The device achieves this using DLL-synchronized echo clocks (CQ/CQ) and HSTL I/O drivers optimized for 1.4–1.8 V VDDQ operation.
How does the CY7C1512V18 handle partial-word writes?
Partial-word writes are controlled by BWS[1:0] (Byte Write Select) signals. BWS0 enables writing to D[8:0], and BWS1 enables D[17:9]. When either is deasserted (HIGH), the corresponding 9-bit group remains unaltered-no read-modify-write cycle is needed. This preserves data integrity during burst updates in packet header modification or statistics counters.
Can CY7C1512V18 operate without the DLL enabled?
Yes-asserting DOFF (DLL Turn Off) LOW disables the internal DLL. However, timing parameters change significantly: CQ/CQ become asynchronous to C/C, and output hold times degrade. The datasheet explicitly states that all AC specifications assume DLL enabled; operation with DOFF asserted requires full re-characterization and is not recommended for production systems.
What is the purpose of the ZQ pin, and how should it be connected?
ZQ calibrates output driver impedance for Q[17:0] and CQ/CQ pins. Connect a precision resistor RQ (typically 50 Ω) between ZQ and ground to set output impedance to 0.2 × RQ (10 Ω). Alternatively, tie ZQ directly to VDDQ to enable minimum-impedance mode (≈7 Ω). Never leave ZQ floating or connect to GND-this causes undefined drive strength and signal integrity failure.
CY7C1512V18-200BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512V18-200BZXI FAQ
1.How can I place an order for CY7C1512V18-200BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512V18-200BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512V18-200BZXI reliable?
The price and inventory of CY7C1512V18-200BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512V18-200BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1512V18-200BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512V18-200BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1512V18-200BZXI?
CY7C1512V18-200BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1512V18-200BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512V18-200BZXI?
For technical support, including CY7C1512V18-200BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512V18-200BZXI requirements.
6.How does Aetrix verify that CY7C1512V18-200BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1512V18-200BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512V18-200BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1512V18-200BZXI?
All CY7C1512V18-200BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512V18-200BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512V18-200BZXI part is unused and in its original packaging.
Return procedure for CY7C1512V18-200BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1512V18-200BZXI Tags

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STMicroelectronics

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