Cypress Semiconductor Corp CY7C1512V18-250BZI

Overview

CY7C1512V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 250 MHz QDR-II SRAM with separate read/write ports, DDR interfaces on both ports (500 MT/s effective data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It operates at core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.8 V, supporting concurrent high-bandwidth memory access in network packet buffers and FPGA co-processor caches.

For engineers reviewing the CY7C1512V18 datasheet, CY7C1512V18 pinout, CY7C1512V18 application, or CY7C1512V18 equivalent, this device is selected for systems requiring deterministic low-latency dual-port burst transfers, echo-clock–assisted timing closure at 500 MT/s, and synchronous self-timed writes without bus turnaround overhead.

Technical Context

The CY7C1512V18 implements QDR-II architecture with physically independent read and write data paths, eliminating bus contention and enabling true simultaneous access. Its 2-word burst transfers occur on every rising edge of K/K (write) and C/C (read) clocks, with address latching on alternating K edges to support 21-bit addressing for the 4M × 18 organization.

It integrates a Delay Lock Loop (DLL) for precise output data alignment, HSTL-class variable-drive output buffers, and JTAG 1149.1 test access. Echo clocks CQ/CQ are free-running and synchronized to C/C, enabling receiver-side deskew in multi-device memory subsystems without external delay compensation.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-270AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512V18 uniquely delivers 9 Gbps dual-port bandwidth with echo-clock–assisted timing closure at 250 MHz, making it irreplaceable in line-rate packet processing and FPGA co-processor cache roles where deterministic sub-200 ps timing is mandatory.

Availability

CY7C1512V18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1512V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1512V18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in packet-switched infrastructure and FPGA-based acceleration platforms.

FAQ

What is the maximum sustained data throughput per port?

The CY7C1512V18 achieves 500 MT/s effective throughput per port using DDR signaling: 250 MHz clock × 2 transfers/cycle × 18 bits = 9 Gbps per port. This is sustained across all 4M addresses with no wait states, confirmed by the 250 MHz maximum operating frequency specification and 2-word burst architecture.

How does the ZQ pin affect signal integrity?

ZQ connects to an external resistor to ground (RQ) to calibrate output driver impedance to 0.2×RQ for Q[17:0], CQ, and CQ pins. This matches typical 50 Ω transmission lines, reducing reflections and jitter. Direct connection to VDDQ sets minimum impedance (~25 Ω), useful for short, heavily loaded nets.

Can CY7C1512V18 operate without the DLL enabled?

Yes-asserting DOFF (low) disables the DLL, but output timing parameters change significantly: tAC increases by ~1.2 ns and tQH tightens by ~0.3 ns. The device remains functional, but system-level timing closure must be revalidated using the "DLL Off" switching characteristics table in Rev. *F datasheet page 23.

What is the role of BWS[1:0] in partial writes?

BWS[1:0] are active-low byte write selects: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted, its corresponding 9-bit segment is ignored during write cycles, preserving existing data in those bits-enabling efficient 9-bit or 18-bit updates without read-modify-write overhead.