Cypress Semiconductor Corp CY7C1513JV18-300BZXC
- Part No.:
- CY7C1513JV18-300BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1513JV18-300BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:209
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Product details
Overview
CY7C1513JV18-300BZXC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 300 MHz clock operation, DDR interfaces on both ports (600 Mbps effective data rate), and 1.5-cycle read latency with DLL enabled. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.
For engineers reviewing the CY7C1513JV18-300BZXC datasheet, CY7C1513JV18-300BZXC pinout, CY7C1513JV18-300BZXC application, or CY7C1513JV18-300BZXC equivalent, key selection criteria include burst depth (4-word), x18 data width, FBGA-165 package compatibility, DLL-enabled timing mode, and HSTL-18 I/O compliance.
Technical Context
The CY7C1513JV18 implements QDR-II architecture with fully independent read and write ports sharing a multiplexed 20-bit address bus. Read and write operations are synchronized to separate K/K clocks, while output data is clocked by C/C with echo clocks CQ/CQ for precise capture timing.
It uses synchronous self-timed writes and supports dual-clock domain operation with DLL for 1.5-cycle read latency or DLL-off QDR-I mode at up to 167 MHz. Core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.8 V enable low-power, high-speed interface compatibility with FPGA and ASIC memory controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18-bit organization) |
| Max Clock Frequency | 300 MHz - enables 600 MT/s DDR transfers per port |
| Read Latency | 1.5 cycles (DLL enabled) - reduces pipeline stalls in burst-intensive systems |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports HSTL-18 Class I/II signaling |
| Core Voltage | VDD = 1.8 V ±0.1 V - ensures stable internal SRAM cell operation |
| Burst Length | 4-word - minimizes address bus toggling and simplifies controller logic |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count memory modules |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | 18-bit parallel data sampled on rising edge of K/K; supports full-width or byte-selectable writes via BWS[1:0] |
| Q[17:0] | Synchronous read data outputs | 18-bit parallel data driven on rising edges of C/C; tri-stated when RPS is deasserted |
| A[19:0] | Multiplexed address inputs | 20-bit address latched on K rising edge for both read and write access to 4M-depth array |
| RPS / WPS | Active-low port select controls | Independent gating of read/write paths - enables depth expansion without external logic |
| C / C, CQ / CQ | Dual-edge output clocking pair + echo clocks | C/C deskew output flight time; CQ/CQ provide source-synchronous timing reference for FPGA capture registers |
| DOFF | DLL disable input | Pulling low disables Delay Lock Loop, reverting device to QDR-I timing (1-cycle latency, ≤167 MHz max) |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q[17:0]/CQ/CQ drive strength to match 50 Ω system trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround overhead - enables true concurrent read+write at full bandwidth |
| 4-word burst architecture | Reduces required address transitions by 75% per access - lowers controller address bus complexity and routing congestion |
| HSTL-18 compliant I/O | Ensures signal integrity at 600 MT/s with controlled slew and on-die termination support via ZQ calibration |
| JTAG 1149.1 test port | Enables boundary-scan testing of interconnects in dense memory subsystems without additional test fixtures |
| Variable drive output buffers | Allows dynamic adjustment of output drive strength to match PCB trace length and loading - reduces EMI and overshoot |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with real-time traffic shaping. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-in-first-out (FIFO) buffer between ingress and egress traffic engines, using independent read/write ports to sustain line-rate throughput. Use Value: 300 MHz clock + 4-word burst delivers 2.16 GB/s aggregate bandwidth (1.08 GB/s per port), sufficient for 10Gbps+ packet processing pipelines. | Use Scenario: Capturing high-resolution waveform samples from multi-channel ADCs in automated test equipment (ATE) during production validation. IC Role / Device Role / Timing Role: High-speed acquisition memory staging raw digitized data before compression or analysis - write port accepts streaming samples, read port feeds DSP engine. Use Value: Concurrent read/write eliminates arbitration delays; DLL-enabled 1.5-cycle latency ensures deterministic sample-to-analysis timing critical for jitter measurement accuracy. |
| Baseband Processing in Wireless Infrastructure | FPGA-Based Protocol Acceleration |
Use Scenario: Temporary storage of OFDM symbol data during channel estimation and MIMO matrix inversion in LTE/5G remote radio units (RRUs). IC Role / Device Role / Timing Role: Shared memory resource accessed simultaneously by multiple DSP cores - write port receives demodulated symbols, read port supplies processed coefficients. Use Value: x18 data width matches typical FFT word size; HSTL-18 I/O ensures clean signal integrity across backplane traces to FPGA-based baseband processors. | Use Scenario: Offloading TCP/IP or encryption processing from host CPU by caching protocol state tables and cipher round keys in reconfigurable hardware. IC Role / Device Role / Timing Role: Low-latency lookup table and context memory for soft-core accelerators implemented in Xilinx Ultrascale+ or Intel Stratix 10 FPGAs. Use Value: 165-ball FBGA footprint aligns with FPGA memory interface ballouts; JTAG support enables in-system verification of memory-mapped accelerator register maps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C36256P-15TIN | Asynchronous 256K × 18-bit SRAM; no DDR, no DLL, single clock domain | Limited to ≤15 ns access; unsuitable for >200 MHz burst systems requiring concurrent I/O | Select only for cost-sensitive, non-pipelined control-plane memory where bandwidth < 1.5 GB/s suffices |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18-bit, 10 ns cycle time; single-port, no burst, no echo clocks | No concurrent read/write; requires external arbitration; lacks CQ/CQ for source-synchronous capture | Use only in legacy designs with existing single-port controller IP; not viable for QDR-II migration |
Compared with AS7C36256P-15TIN and IS61WV102418BLL-10BLI, CY7C1513JV18-300BZXC uniquely delivers 72-Mbit density with true concurrent dual-port DDR operation, echo-clock–assisted timing closure, and DLL-adjustable latency - essential for modern packet-processing and test instrumentation architectures.
Availability
CY7C1513JV18-300BZXC is available at Aetrix Electronics and suitable for network infrastructure, automated test equipment, wireless baseband processing, and FPGA-based protocol acceleration requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1513JV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.
CY7C1513JV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, high-throughput memory interfacing in packet-switched networks and real-time test instrumentation where concurrent read/write bandwidth and sub-cycle timing control are mandatory.
FAQ
What is the minimum supported VDDQ voltage for CY7C1513JV18-300BZXC?
The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed per datasheet specifications; 1.5 V is commonly used to balance power efficiency and noise margin in HSTL-18 interfaces. Core VDD remains fixed at 1.8 V ±0.1 V regardless of VDDQ setting.
Can CY7C1513JV18-300BZXC operate without connecting the ZQ pin?
No - ZQ must be connected either to an external resistor to ground (for impedance calibration) or directly to VDDQ (to enable minimum drive strength). Leaving ZQ unconnected or tied to GND violates absolute maximum ratings and may cause output driver malfunction or excessive current draw.
How does DOFF affect read latency and maximum operating frequency?
Asserting DOFF (low) disables the DLL, forcing QDR-I timing mode: read latency drops to 1 cycle but maximum clock frequency is limited to 167 MHz. In DLL-on mode, latency is 1.5 cycles at full 300 MHz operation - this trade-off is hardware-selectable per system timing budget.
Is the 165-ball FBGA package of CY7C1513JV18-300BZXC compatible with CY7C1511JV18-300BZXC layout?
Yes - all QDR-II parts in the CY7C15xxJV18 family share identical 165-ball FBGA mechanical dimensions and ball pitch (0.8 mm). Pin functions differ (e.g., D[17:0] vs D[7:0], BWS vs NWS), but PCB footprint and thermal pad design are fully interchangeable across x8/x9/x18/x36 variants.
CY7C1513JV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1513JV18-300BZXC FAQ
1.How can I place an order for CY7C1513JV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1513JV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1513JV18-300BZXC reliable?
The price and inventory of CY7C1513JV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1513JV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1513JV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1513JV18-300BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1513JV18-300BZXC?
CY7C1513JV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1513JV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1513JV18-300BZXC?
For technical support, including CY7C1513JV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1513JV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1513JV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1513JV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1513JV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1513JV18-300BZXC?
All CY7C1513JV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1513JV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1513JV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1513JV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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