Cypress Semiconductor Corp CY7C1513KV18-200BZXI

Overview

CY7C1513KV18-200BZXI from Cypress Semiconductor is a 4M × 18 (72-Mbit) QDR® II SRAM with synchronous pipelined architecture, separate read/write ports, 200 MHz maximum clock frequency, 1.8 V core supply, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers concurrent read/write transactions at 400 MT/s effective data rate using DDR interfaces on both ports and supports four-word burst transfers for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1513KV18-200BZXI datasheet, CY7C1513KV18-200BZXI pinout, CY7C1513KV18-200BZXI application, or CY7C1513KV18-200BZXI equivalent, key selection criteria include its 200 MHz K-clock timing, DOFF-controlled 1-cycle vs. 1.5-cycle read latency, BWS[1:0]-enabled byte write granularity, echo clock (CQ/CQ) support for source-synchronous capture, and compatibility with HSTL-15/18 I/O standards.

Technical Context

This QDR II SRAM implements dual independent clock domains: K/K for address/data input synchronization and C/C for output data timing, enabling precise deskewing across multi-device memory subsystems. Its internal PLL ensures accurate data placement relative to echo clocks, and all writes are self-timed with synchronous control logic.

The device uses a single multiplexed address bus latched on alternating rising edges of K, supports depth expansion via RPS/WPS, and maintains full data coherency by guaranteeing most-current-data delivery even during overlapping read/write operations to the same address.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1513KV18-250BZXI, the -200BZXI trades 25% peak bandwidth for lower power, relaxed timing margins, and broader voltage/temperature stability; versus AS7C3256A-20JC, it delivers 20× higher effective throughput and deterministic latency but requires clock domain management and higher PCB complexity.

Availability

CY7C1513KV18-200BZXI is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card memory, 5G baseband processing, and automated test equipment pattern storage requiring stable component supply across extended product lifecycles.

Supply support for CY7C1513KV18-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, communications, and industrial systems, with headquarters in San Jose, CA.

CY7C1513KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth, low-latency buffer applications in packet-switched infrastructure where concurrent read/write and source-synchronous timing are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-200BZXI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal access delay. This setting is sampled synchronously on the rising edge of the K clock and affects all subsequent read operations until changed.

Can CY7C1513KV18-200BZXI operate with only a single clock (K) instead of differential K/K?

Yes - the device supports single-ended clocking on K only; K may be tied to VDD or VSS. In this mode, both read and write data are synchronized to K, and C/C must also be driven from the same source. However, echo clock (CQ/CQ) functionality and optimal deskew capability are lost, limiting reliable operation to ≤300 MT/s in most layouts.

How does byte write select (BWS) work for the 4M × 18 configuration?

BWS[1:0] provides two active-LOW signals controlling 9-bit byte lanes: BWS0 enables writing to D[8:0], and BWS1 enables D[17:9]. When either is deasserted, the corresponding 9-bit segment retains its prior value. This allows partial-word updates without read-modify-write cycles - essential for protocol header manipulation in packet processing.

Is JTAG boundary scan supported on CY7C1513KV18-200BZXI, and what pins are used?

Yes - the device implements IEEE 1149.1 JTAG test access port using TDI, TDO, TCK, and TMS pins located on balls R14, R13, R12, and R11 respectively. Boundary scan supports full pin interconnect testing and is enabled by default at power-up; it can be disabled via instruction register programming if unused in production.