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Cypress Semiconductor Corp CY7C1513KV18-250BZC

Part No.:
CY7C1513KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1513KV18-250BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:841

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Product details

Overview

CY7C1513KV18-250BZC from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum clock frequency (K/K), 500 MHz DDR data rate (1.0 Gbps per port), and 1.8 V core / 1.4–1.8 V I/O supply. It implements separate read/write ports with echo clocks (CQ/CQ) and supports concurrent transactions in high-bandwidth networking buffers.

For engineers reviewing the CY7C1513KV18-250BZC datasheet, CY7C1513KV18-250BZC pinout, CY7C1513KV18-250BZC application, or CY7C1513KV18-250BZC equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), synchronous self-timed writes, JTAG 1149.1 test access, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with depth expansion via RPS/WPS.

Technical Context

This QDR II SRAM uses dual independent clock domains: K/K for address/data capture and C/C for output timing, enabling precise DDR edge alignment without bus turnaround. Its internal 4M × 18 memory array is organized as four 1M × 18 sub-arrays, accessed via 20-bit multiplexed address bus (A[19:0]) latched on alternating K-clock edges.

The device integrates a PLL for accurate data placement, HSTL-class variable-drive output buffers, and programmable impedance control. Echo clocks (CQ/CQ) are phase-aligned with output data to simplify receiver capture at 500 MHz, while DOFF pin selects between 1-cycle (DOFF = LOW) and 1.5-cycle (DOFF = HIGH) read latency modes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency (K/K) 250 MHz - sets upper limit for address/command input rate
Data Rate (DDR) 500 MHz - enables 1.0 Gbps per port throughput
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - directly impacts pipeline depth in switch fabric designs
Core Supply (VDD) 1.8 V ±0.1 V - defines minimum power rail stability requirement
I/O Supply (VDDQ) 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V logic families
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in telecom line cards

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A[19:0] Multiplexed address input Latched on rising edge of K clock for both read and write operations; 20-bit bus addresses full 4M depth
D[17:0] Write data input 18-bit parallel data sampled on rising edge of K/K during active WPS assertion
Q[17:0] Read data output 18-bit DDR outputs driven on rising edges of C/C; tristated when RPS deasserted
RPS Read port select Active-low synchronous control; initiates 4-word burst read on rising K edge
WPS Write port select Active-low synchronous control; enables write operation and data sampling on K/K
BWS[1:0] Byte write select Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write
C, C Output clock pair Differential clock inputs for Q[17:0] timing; deskews flight time across multi-device memory subsystems
CQ, CQ Echo clock pair Phase-aligned with Q[17:0] outputs; simplifies source-synchronous capture at controller side
K, K Input clock pair Differential clocks for address, data, and control sampling; rising edges drive all synchronous inputs
DOFF Read latency mode High = 1.5-cycle latency (pipelined read), Low = 1-cycle latency (QDR I compatibility mode)

Key Features

Feature Design Value
Separate read/write ports Enables true concurrent read+write without bus arbitration or turnaround delay
Four-word burst architecture Reduces address bus toggling by 75% vs. single-word access - lowers EMI and routing congestion
Synchronous self-timed writes Eliminates external write pulse timing constraints; internal timing guarantees data setup/hold compliance
JTAG 1149.1 boundary scan Supports IEEE-compliant structural testing and interconnect verification in assembled systems
Programmable output drive strength HSTL-compatible variable drive minimizes signal integrity issues across varied trace lengths and loads

Applications

Packet Buffer in Layer 3 Switches Line Card Memory in Optical Transport Systems

Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switching fabric.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as non-blocking buffer with simultaneous header lookup (read) and payload write under strict 250 MHz timing budget.

Use Value: 1.5-cycle read latency and echo clocks enable deterministic 500 Mbps data capture at FPGA interface, reducing jitter-induced FIFO overflow risk.

Use Scenario: Holding SONET/SDH frame overhead bytes and pointer adjustment data in OTU2/OTU3 line interface modules.

IC Role / Device Role / Timing Role: High-reliability QDR II memory providing synchronized access to frame alignment registers and payload buffers with JTAG testability.

Use Value: Concurrent read/write capability allows real-time pointer update (write) while streaming frame data (read), sustaining 2.5 Gbps line rate without stall cycles.

Backplane Interface Cache in Base Station Controllers Protocol Accelerator Memory in Security Appliances

Use Scenario: Caching CPRI/Ir interface metadata and channel state information between RF units and baseband processors.

IC Role / Device Role / Timing Role: Low-latency SRAM acting as shared memory between two independent clock domains (CPRI Rx/Tx), synchronized via K/K and C/C pairs.

Use Value: Echo clocks (CQ/CQ) align with FPGA IDELAYCTRL inputs, achieving <15 ps skew margin for 250 MHz backplane timing closure.

Use Scenario: Storing encryption context tables and packet classification rules in hardware-accelerated firewall ASIC pipelines.

IC Role / Device Role / Timing Role: Deterministic-access memory supporting parallel rule match (read) and session state update (write) in single-cycle pipeline stages.

Use Value: Byte write select (BWS[1:0]) enables atomic 9-bit or 18-bit updates to AES round keys without disturbing adjacent context entries.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 36-Mbit (2M × 18), 100 MHz max clock, no echo clocks, LVDS I/O only Lower bandwidth; requires external deserialization; lacks CQ/CQ for source-synchronous capture Use where cost sensitivity outweighs bandwidth and timing margin requirements
ISSI IS61WV102418BLL-15BLI 18-Mbit (512K × 36), 150 MHz max clock, single-port async SRAM, no DDR or burst No concurrent access; no echo clocks or PLL; asynchronous interface increases controller complexity Use in legacy designs requiring pin-compatible replacement with minimal PCB change

Compared with IDT72T3615L10PA and IS61WV102418BLL-15BLI, CY7C1513KV18-250BZC delivers 2.5× higher bandwidth, deterministic 1.5-cycle latency, and integrated echo clocks-critical for 10G+ packet processing where timing closure and jitter tolerance define system feasibility.

Availability

CY7C1513KV18-250BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, optical transport line card memory, base station backplane caching, and protocol accelerator applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1513KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with focus on signal integrity and timing-critical applications.

CY7C1513KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in 10G/40G/100G data plane implementations.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-250BZC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency with pipelined output staging; when LOW, it reverts to 1-cycle latency compatible with QDR I timing. This setting directly affects the number of clock cycles between RPS assertion and first valid Q[17:0] data, impacting controller pipeline design.

How does the CY7C1513KV18-250BZC support depth expansion?

Depth expansion is achieved using RPS (Read Port Select) and WPS (Write Port Select) pins to enable/disable individual devices in a bank. Each SRAM responds only when its RPS/WPS is asserted, allowing multiple devices to share the same A[19:0], D[17:0], and Q[17:0] buses while independently managing access to their respective memory segments.

Can CY7C1513KV18-250BZC operate with only a single clock input?

Yes - the device supports single-clock-domain operation by tying K to C and K to C. In this mode, all data transfers (input and output) are referenced to the K/K clock, eliminating need for separate C/C generation. However, echo clock (CQ/CQ) functionality and optimal skew compensation are lost, limiting maximum reliable data rate to ~400 MHz.

What is the purpose of BWS[1:0] in CY7C1513KV18-250BZC?

BWS[1:0] are active-low byte write select signals: BWS0 controls writing to D[8:0], and BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit byte remains unaltered during the write cycle. This enables partial-word updates without requiring a read-modify-write sequence, preserving data integrity in multi-threaded packet header modification.

CY7C1513KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1513KV18-250BZC FAQ

1.How can I place an order for CY7C1513KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1513KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1513KV18-250BZC reliable?

The price and inventory of CY7C1513KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1513KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1513KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1513KV18-250BZC transactions.

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4.How is shipping managed for CY7C1513KV18-250BZC?

CY7C1513KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1513KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1513KV18-250BZC?

For technical support, including CY7C1513KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1513KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1513KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1513KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1513KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1513KV18-250BZC?

All CY7C1513KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1513KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1513KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1513KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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