Cypress Semiconductor Corp CY7C1513KV18-250BZC
- Part No.:
- CY7C1513KV18-250BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1513KV18-250BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:841
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Product details
Overview
CY7C1513KV18-250BZC from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum clock frequency (K/K), 500 MHz DDR data rate (1.0 Gbps per port), and 1.8 V core / 1.4–1.8 V I/O supply. It implements separate read/write ports with echo clocks (CQ/CQ) and supports concurrent transactions in high-bandwidth networking buffers.
For engineers reviewing the CY7C1513KV18-250BZC datasheet, CY7C1513KV18-250BZC pinout, CY7C1513KV18-250BZC application, or CY7C1513KV18-250BZC equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), synchronous self-timed writes, JTAG 1149.1 test access, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with depth expansion via RPS/WPS.
Technical Context
This QDR II SRAM uses dual independent clock domains: K/K for address/data capture and C/C for output timing, enabling precise DDR edge alignment without bus turnaround. Its internal 4M × 18 memory array is organized as four 1M × 18 sub-arrays, accessed via 20-bit multiplexed address bus (A[19:0]) latched on alternating K-clock edges.
The device integrates a PLL for accurate data placement, HSTL-class variable-drive output buffers, and programmable impedance control. Echo clocks (CQ/CQ) are phase-aligned with output data to simplify receiver capture at 500 MHz, while DOFF pin selects between 1-cycle (DOFF = LOW) and 1.5-cycle (DOFF = HIGH) read latency modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 configuration) |
| Max Clock Frequency (K/K) | 250 MHz - sets upper limit for address/command input rate |
| Data Rate (DDR) | 500 MHz - enables 1.0 Gbps per port throughput |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - directly impacts pipeline depth in switch fabric designs |
| Core Supply (VDD) | 1.8 V ±0.1 V - defines minimum power rail stability requirement |
| I/O Supply (VDDQ) | 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V logic families |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in telecom line cards |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[19:0] | Multiplexed address input | Latched on rising edge of K clock for both read and write operations; 20-bit bus addresses full 4M depth |
| D[17:0] | Write data input | 18-bit parallel data sampled on rising edge of K/K during active WPS assertion |
| Q[17:0] | Read data output | 18-bit DDR outputs driven on rising edges of C/C; tristated when RPS deasserted |
| RPS | Read port select | Active-low synchronous control; initiates 4-word burst read on rising K edge |
| WPS | Write port select | Active-low synchronous control; enables write operation and data sampling on K/K |
| BWS[1:0] | Byte write select | Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write |
| C, C | Output clock pair | Differential clock inputs for Q[17:0] timing; deskews flight time across multi-device memory subsystems |
| CQ, CQ | Echo clock pair | Phase-aligned with Q[17:0] outputs; simplifies source-synchronous capture at controller side |
| K, K | Input clock pair | Differential clocks for address, data, and control sampling; rising edges drive all synchronous inputs |
| DOFF | Read latency mode | High = 1.5-cycle latency (pipelined read), Low = 1-cycle latency (QDR I compatibility mode) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent read+write without bus arbitration or turnaround delay |
| Four-word burst architecture | Reduces address bus toggling by 75% vs. single-word access - lowers EMI and routing congestion |
| Synchronous self-timed writes | Eliminates external write pulse timing constraints; internal timing guarantees data setup/hold compliance |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant structural testing and interconnect verification in assembled systems |
| Programmable output drive strength | HSTL-compatible variable drive minimizes signal integrity issues across varied trace lengths and loads |
Applications
| Packet Buffer in Layer 3 Switches | Line Card Memory in Optical Transport Systems |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switching fabric. IC Role / Device Role / Timing Role: Dual-port SRAM serving as non-blocking buffer with simultaneous header lookup (read) and payload write under strict 250 MHz timing budget. Use Value: 1.5-cycle read latency and echo clocks enable deterministic 500 Mbps data capture at FPGA interface, reducing jitter-induced FIFO overflow risk. |
Use Scenario: Holding SONET/SDH frame overhead bytes and pointer adjustment data in OTU2/OTU3 line interface modules. IC Role / Device Role / Timing Role: High-reliability QDR II memory providing synchronized access to frame alignment registers and payload buffers with JTAG testability. Use Value: Concurrent read/write capability allows real-time pointer update (write) while streaming frame data (read), sustaining 2.5 Gbps line rate without stall cycles. |
| Backplane Interface Cache in Base Station Controllers | Protocol Accelerator Memory in Security Appliances |
|
Use Scenario: Caching CPRI/Ir interface metadata and channel state information between RF units and baseband processors. IC Role / Device Role / Timing Role: Low-latency SRAM acting as shared memory between two independent clock domains (CPRI Rx/Tx), synchronized via K/K and C/C pairs. Use Value: Echo clocks (CQ/CQ) align with FPGA IDELAYCTRL inputs, achieving <15 ps skew margin for 250 MHz backplane timing closure. |
Use Scenario: Storing encryption context tables and packet classification rules in hardware-accelerated firewall ASIC pipelines. IC Role / Device Role / Timing Role: Deterministic-access memory supporting parallel rule match (read) and session state update (write) in single-cycle pipeline stages. Use Value: Byte write select (BWS[1:0]) enables atomic 9-bit or 18-bit updates to AES round keys without disturbing adjacent context entries. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10PA | 36-Mbit (2M × 18), 100 MHz max clock, no echo clocks, LVDS I/O only | Lower bandwidth; requires external deserialization; lacks CQ/CQ for source-synchronous capture | Use where cost sensitivity outweighs bandwidth and timing margin requirements |
| ISSI IS61WV102418BLL-15BLI | 18-Mbit (512K × 36), 150 MHz max clock, single-port async SRAM, no DDR or burst | No concurrent access; no echo clocks or PLL; asynchronous interface increases controller complexity | Use in legacy designs requiring pin-compatible replacement with minimal PCB change |
Compared with IDT72T3615L10PA and IS61WV102418BLL-15BLI, CY7C1513KV18-250BZC delivers 2.5× higher bandwidth, deterministic 1.5-cycle latency, and integrated echo clocks-critical for 10G+ packet processing where timing closure and jitter tolerance define system feasibility.
Availability
CY7C1513KV18-250BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, optical transport line card memory, base station backplane caching, and protocol accelerator applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1513KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with focus on signal integrity and timing-critical applications.
CY7C1513KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in 10G/40G/100G data plane implementations.
FAQ
What is the function of the DOFF pin on CY7C1513KV18-250BZC?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency with pipelined output staging; when LOW, it reverts to 1-cycle latency compatible with QDR I timing. This setting directly affects the number of clock cycles between RPS assertion and first valid Q[17:0] data, impacting controller pipeline design.
How does the CY7C1513KV18-250BZC support depth expansion?
Depth expansion is achieved using RPS (Read Port Select) and WPS (Write Port Select) pins to enable/disable individual devices in a bank. Each SRAM responds only when its RPS/WPS is asserted, allowing multiple devices to share the same A[19:0], D[17:0], and Q[17:0] buses while independently managing access to their respective memory segments.
Can CY7C1513KV18-250BZC operate with only a single clock input?
Yes - the device supports single-clock-domain operation by tying K to C and K to C. In this mode, all data transfers (input and output) are referenced to the K/K clock, eliminating need for separate C/C generation. However, echo clock (CQ/CQ) functionality and optimal skew compensation are lost, limiting maximum reliable data rate to ~400 MHz.
What is the purpose of BWS[1:0] in CY7C1513KV18-250BZC?
BWS[1:0] are active-low byte write select signals: BWS0 controls writing to D[8:0], and BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit byte remains unaltered during the write cycle. This enables partial-word updates without requiring a read-modify-write sequence, preserving data integrity in multi-threaded packet header modification.
CY7C1513KV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1513KV18-250BZC FAQ
1.How can I place an order for CY7C1513KV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1513KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1513KV18-250BZC reliable?
The price and inventory of CY7C1513KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1513KV18-250BZC is usually 5 days.
3.What payment methods are accepted for CY7C1513KV18-250BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1513KV18-250BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1513KV18-250BZC?
CY7C1513KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1513KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1513KV18-250BZC?
For technical support, including CY7C1513KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1513KV18-250BZC requirements.
6.How does Aetrix verify that CY7C1513KV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1513KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1513KV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1513KV18-250BZC?
All CY7C1513KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1513KV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1513KV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1513KV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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