Cypress Semiconductor Corp CY7C1513KV18-250BZI

Overview

CY7C1513KV18-250BZI from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with separate read/write ports, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements four-word burst DDR interfaces on both ports, supports concurrent read/write transactions, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-speed networking buffer applications.

For engineers reviewing the CY7C1513KV18-250BZI datasheet, CY7C1513KV18-250BZI pinout, CY7C1513KV18-250BZI application, or CY7C1513KV18-250BZI equivalent, key selection criteria include read latency (1.5 cycles with DOFF HIGH), echo clock support (CQ/CQ), JTAG 1149.1 compliance, and depth expansion via RPS/WPS controls.

Technical Context

This QDR II SRAM uses dual independent clock domains: K/K for address/data capture and C/C for output timing, enabling precise DDR data placement without bus turnaround. Its internal PLL synchronizes echo clocks (CQ/CQ) to simplify high-speed data capture at system level.

The device latches read and write addresses on alternate rising edges of K, supports synchronous self-timed writes, and maintains full data coherency across concurrent operations. Byte write select (BWS[1:0]) enables selective 18-bit word updates without disturbing adjacent bytes.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch BGA (13 mm × 15 mm × 1.4 mm height), RoHS-compliant, with 0.8 mm ball pitch and standard HSTL-18 compatible I/Os.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1513KV18-300BZI, the -250BZI trades 20% bandwidth for lower power and relaxed timing margins; versus AS7C3256B-25JC, it delivers 7× higher effective throughput and deterministic latency but requires DDR-aware controller design.

Availability

CY7C1513KV18-250BZI is available at Aetrix Electronics and suitable for packet buffering in networking switches, line card memory in telecom infrastructure, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1513KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1513KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed communications infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-250BZI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for optimal QDR II performance; when LOW, it reverts to 1-cycle latency for backward compatibility with QDR I controllers. This setting is sampled synchronously on the K clock edge and affects all subsequent read bursts until changed.

Can CY7C1513KV18-250BZI operate with only a single clock domain?

Yes - the device supports single-clock-mode operation where K and C are driven by the same source, and K and C are tied together. In this configuration, data is clocked out on K/K edges instead of C/C, eliminating echo clock routing but reducing timing margin flexibility. All functional behavior remains identical except for reduced skew compensation capability.

How does byte write select (BWS) work for the 18-bit data width?

BWS[1:0] controls two independent 9-bit segments: BWS0 enables writing to D[8:0], and BWS1 enables writing to D[17:9]. Both are active-low and sampled on the same K clock edge as data. When either is deasserted, the corresponding 9-bit portion retains its prior value - enabling partial-word updates without read-modify-write cycles.

Is the 165-ball FBGA package lead-free?

Yes - the "BZI" suffix denotes a Pb-free, RoHS-compliant 165-ball FBGA package with NiPdAu surface finish. It meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and supports standard lead-free reflow profiles with peak temperature up to 260 °C.