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Cypress Semiconductor Corp CY7C1513KV18-300BZI

Part No.:
CY7C1513KV18-300BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1513KV18-300BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,677

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Product details

Overview

CY7C1513KV18-300BZI from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with separate read/write ports, 300 MHz clock operation (600 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions with four-word burst architecture and echo clocks (CQ/CQ) for high-speed data capture in networking packet buffers.

For engineers reviewing the CY7C1513KV18-300BZI datasheet, CY7C1513KV18-300BZI pinout, CY7C1513KV18-300BZI application, or CY7C1513KV18-300BZI equivalent, key selection criteria include its 20-bit address bus, dual-clock DDR timing (K/K and C/C), DOFF-controlled 1.5-cycle vs. 1-cycle read latency, and FBGA-165 package compatibility with depth expansion via RPS/WPS and BWS[1:0].

Technical Context

This QDR II SRAM implements fully independent synchronous read and write pipelines with pipelined address latching on alternating K-clock edges. Its dual DDR interfaces operate at 600 MHz effective data rate using edge-aligned K/K for writes and C/C for reads - enabling true concurrent access without bus turnaround.

The device integrates a PLL for precise output data placement, supports programmable impedance via ZQ pin, and uses JTAG 1149.1 for boundary scan testing. Read latency is configurable (1 or 1.5 cycles) via DOFF, and byte write select (BWS[1:0]) enables partial 18-bit word updates without read-modify-write overhead.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (4M × 18 organization)
Clock Frequency300 MHz - determines maximum sustained bandwidth of 4.32 GB/s (600 MHz DDR × 18-bit bus)
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - impacts pipeline depth in switch fabric controllers
Supply VoltagesVDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports mixed-voltage system integration with 1.5 V or 1.8 V memory subsystems
Burst LengthFour-word burst - reduces address bus toggling frequency by 4× versus single-word access, easing PCB routing
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory in telecom line cards
Output InterfaceHSTL Class I - ensures signal integrity at 600 MHz with controlled drive strength and termination support

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
A[19:0]Address Input20-bit multiplexed address bus latched on rising K edge for both read and write operations
D[17:0]Data Input18-bit synchronous write data sampled on rising K/K edges during WPS assertion
Q[17:0]Data Output18-bit synchronous read data driven on rising C/C edges; tristated when RPS deasserted
RPS / WPSPort SelectActive-low synchronous controls enabling independent read or write port activation
BWS[1:0]Byte Write SelectTwo active-low signals selecting which 9-bit nibble (D[8:0] or D[17:9]) is written - enables partial-word updates
C / C, K / KDual Differential Clock InputsSeparate clock pairs for output (C/C) and input (K/K) timing - minimizes skew and supports deskew in multi-device systems
CQ / CQEcho Clock OutputsSource-synchronous clocks echoed with read data - simplifies capture timing at controller side
DOFFRead Latency ControlStatic input setting read latency to 1 cycle (LOW) or 1.5 cycles (HIGH) - affects pipeline alignment in ASIC/FPGA interfaces

Key Features

FeatureDesign Value
Independent Read/Write PortsEliminates bus turnaround delay - enables full-duplex memory access critical for packet buffering in 10G+ switches
Four-Word Burst ArchitectureReduces required address transition rate by 75% - lowers EMI and relaxes timing closure on address traces
Configurable Read Latency (1 or 1.5 cycles)Allows tuning to match controller pipeline depth - avoids forced wait states in FPGA-based traffic managers
HSTL Class I Output DriversProvides 25–35 Ω programmable impedance (via ZQ) - ensures clean signal integrity at 600 MHz without external termination
JTAG 1149.1 Boundary ScanEnables in-system testability of high-speed memory interconnects - critical for production test of dense telecom PCBs

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 Ethernet switches operating at 10 Gbps and above.

IC Role / Device Role / Timing Role: Dedicated QDR II SRAM serving as dual-ported buffer memory - accepts packet writes while simultaneously servicing lookup reads.

Use Value: Concurrent read/write eliminates arbitration stalls, enabling deterministic 600 MHz data throughput per port for non-blocking fabric designs.

Use Scenario: Acting as shared memory between multiple ASICs in modular chassis-based routers with distributed forwarding engines.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory node in crossbar-connected switch fabric - synchronized via common K/C clocks across multiple devices.

Use Value: Echo clocks (CQ/CQ) and matched flight times allow precise data capture across 10+ parallel SRAMs without per-lane deskew logic.

Telecom Line Card BufferingFPGA-Based Protocol Acceleration

Use Scenario: Buffering SONET/SDH or OTN frame data in optical transport equipment requiring strict jitter tolerance and burst resilience.

IC Role / Device Role / Timing Role: QDR II SRAM interfaced to SerDes PHYs via FPGA - absorbs variable-length bursts while maintaining constant read-out rate.

Use Value: Four-word burst mode aligns with typical OTU frame segment sizes, reducing address bus utilization and improving power efficiency.

Use Scenario: Offloading packet classification, deep packet inspection, or encryption tasks in reconfigurable security appliances.

IC Role / Device Role / Timing Role: External high-speed memory tightly coupled to FPGA fabric - accessed via native QDR II IP cores with zero-wait-state pipelining.

Use Value: Configurable 1.5-cycle latency allows optimal matching to FPGA register stages, maximizing clock frequency in 300 MHz designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C361024B-300BIN300 MHz, 4M × 18, 1.8 V core, but uses single-ended clocks (no C/C or CQ/CQ) and lacks DOFF latency controlSuitable for simpler systems where echo clocks and latency tuning are unnecessary; lower pin count (119-TSOP-II)Select when board space and cost outweigh need for advanced timing control and multi-device deskew.
IS42S16160F-3BLSDRAM, not QDR - synchronous single-port, 16M × 16, 166 MHz clock, no concurrent read/write capabilityApplicable only in non-concurrent, lower-bandwidth applications where burst depth and latency are less criticalChoose only if design already uses SDRAM controllers and can tolerate bus turnaround delays and halved effective bandwidth.

Compared with AS7C361024B-300BIN and IS42S16160F-3BL, CY7C1513KV18-300BZI uniquely delivers true concurrent access, echo-clock–assisted timing closure, and configurable latency - making it irreplaceable in high-performance packet processing where deterministic dual-port bandwidth is mandatory.

Availability

CY7C1513KV18-300BZI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom line card buffering requiring stable component supply across extended product lifecycles.

Supply support for CY7C1513KV18-300BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1513KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, dual-port memory access in networking infrastructure - targeting packet switches, routers, and baseband units demanding >4 GB/s sustained bandwidth.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-300BZI?

The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting is sampled at power-up and remains static during operation - no dynamic switching is supported.

Can CY7C1513KV18-300BZI operate with only a single clock source?

Yes - the device supports single-clock-domain operation by tying K to C and K to C. In this mode, all data transfers (read and write) are synchronized to the K clock, eliminating need for separate C/C generation. However, echo clocks (CQ/CQ) remain functional and must be terminated properly to avoid noise coupling.

How does the BWS[1:0] signal enable partial writes in CY7C1513KV18-300BZI?

BWS[1:0] are active-low byte write selects: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted (HIGH), the corresponding 9-bit portion of the 18-bit write word is ignored, preserving existing memory contents. This enables efficient 9-bit or 18-bit updates without requiring read-modify-write sequences.

Is the 165-ball FBGA package of CY7C1513KV18-300BZI compatible with standard reflow profiles?

Yes - the CY7C1513KV18-300BZI in 165-ball FBGA (13 × 15 × 1.4 mm) adheres to IPC/JEDEC J-STD-020D moisture sensitivity level 3 and qualifies for standard lead-free reflow profiles (peak 260°C, 60-second duration). Board layout must observe 0.5 mm ball pitch spacing and recommended thermal pad under the die area.

CY7C1513KV18-300BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1513KV18-300BZI FAQ

1.How can I place an order for CY7C1513KV18-300BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1513KV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1513KV18-300BZI reliable?

The price and inventory of CY7C1513KV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1513KV18-300BZI is usually 5 days.

3.What payment methods are accepted for CY7C1513KV18-300BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1513KV18-300BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1513KV18-300BZI?

CY7C1513KV18-300BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1513KV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1513KV18-300BZI?

For technical support, including CY7C1513KV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1513KV18-300BZI requirements.

6.How does Aetrix verify that CY7C1513KV18-300BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1513KV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1513KV18-300BZI meets industry standards.

7.What is the process for return or replacement of CY7C1513KV18-300BZI?

All CY7C1513KV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1513KV18-300BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1513KV18-300BZI part is unused and in its original packaging.

Return procedure for CY7C1513KV18-300BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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